公开(公告)号：US20220277961A1

公开(公告)日：2022-09-01

申请号：US17335241

申请日：2021-06-01

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Jacqueline S. Wrench ,  Feihu Wang ,  Yixiong Yang ,  Joung Joo Lee ,  Srinivas Gandikota

IPC: H01L21/285 ,  H01L21/02 ,  C23C16/455

Abstract: Methods for depositing a metal contact stack on a substrate are described. The method stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

公开(公告)号：US20220267904A1

公开(公告)日：2022-08-25

申请号：US17735257

申请日：2022-05-03

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Darshan Thakare ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Srinivas Gandikota

IPC: C23C16/455 ,  C08G77/26 ,  C08G77/50 ,  C23C16/34 ,  C23C16/46 ,  C23C16/32 ,  H01L21/28

Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).

公开(公告)号：US11359282B2

公开(公告)日：2022-06-14

申请号：US16991430

申请日：2020-08-12

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Darshan Thakare ,  Prerna Goradia ,  Robert Jan Visser ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Srinivas Gandikota

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/46 ,  C23C16/32 ,  H01L21/28 ,  C08G77/26 ,  C08G77/50

Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).

公开(公告)号：US11244824B2

公开(公告)日：2022-02-08

申请号：US16754619

申请日：2018-10-09

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yihong Chen ,  Yong Wu ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for depositing a metal film on a doped amorphous silicon layer as a nucleation layer and/or a glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the doped amorphous silicon layer and metal layer to stick to the substrate.

公开(公告)号：US20210351074A1

公开(公告)日：2021-11-11

申请号：US16867092

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Srinivas Gandikota ,  Wei Liu

IPC: H01L21/768 ,  H01L21/321

Abstract: Methods for filling a substrate feature with a seamless gap fill are described. Methods comprise forming a metal film a substrate surface, the sidewalls and the bottom surface of a feature, the metal film having a void located within the width of the feature; treating the metal film with a plasma; and annealing the metal film to remove the void.

公开(公告)号：US11043386B2

公开(公告)日：2021-06-22

申请号：US15959972

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Joseph Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/28 ,  C23C16/14 ,  C23C16/452 ,  C23C16/458 ,  H01L21/768

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US11043372B2

公开(公告)日：2021-06-22

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/683 ,  H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20 ,  H01L21/67 ,  C23C16/458 ,  C23C16/26 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/11556

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.

公开(公告)号：US10998195B2

公开(公告)日：2021-05-04

申请号：US16682154

申请日：2019-11-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yingli Rao ,  Srinivas Gandikota

IPC: H01L21/285 ,  H01L27/11578 ,  H01L21/321 ,  C23C16/34 ,  C23C16/06 ,  C23C28/00 ,  H01L21/3205 ,  C23C16/50 ,  C23C16/40 ,  C23C16/455 ,  H01L27/115

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

公开(公告)号：US10985023B2

公开(公告)日：2021-04-20

申请号：US15461842

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/42 ,  H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/28 ,  C23C16/06 ,  C23C16/02 ,  C23C16/34

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US10930493B2

公开(公告)日：2021-02-23

申请号：US16596647

申请日：2019-10-08

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yong Wu ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/324

Abstract: Embodiments described herein generally relate to methods of depositing thin films and, more particularly, to depositing metal thin films. The methods herein provide a nucleation free conversion (NFC) approach which involves forming an amorphous silicon layer over the dielectric layer, and performing an NFC process which acts to convert the amorphous silicon layer into a thin metal film. In some embodiments, the NFC process is performed multiple times until the resulting thin metal film is continuous. A bulk metal is formed over the thin metal film.