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公开(公告)号：US11342481B2
公开(公告)日：2022-05-24
申请号：US16884028
申请日：2020-05-26
Applicant: Applied Materials, Inc.
Inventor： Thomas Knisley , Bhaskar Jyoti Bhuyan , Mark Saly , Mingwei Zhu
IPC: H01L33/00
Abstract: Method for cleaning and encapsulating microLED features are disclosed. Some embodiments provide for a wet clean process and a dry clean process to remove contaminants from the microLED feature. Some embodiments provide for the encapsulation of a clean microLED feature. Some embodiments provide improved crystallinity of the microLED feature and the capping layer. Some embodiments provide improved EQE of microLED devices formed from the disclosed microLED features.
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公开(公告)号：US20210328104A1
公开(公告)日：2021-10-21
申请号：US17362794
申请日：2021-06-29
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US20200373279A1
公开(公告)日：2020-11-26
申请号：US16422879
申请日：2019-05-24
Applicant: Applied Materials, Inc.
Inventor： Sivapackia Ganapathiappan , Yingdong Luo , Daihua Zhang , Hou T. Ng , Mingwei Zhu , Nag B. Patibandla
IPC: H01L25/075 , C09K11/02 , G03F7/028 , G03F7/00
Abstract: A photocurable composition includes a nanomaterial selected to emit radiation in a first wavelength band in the visible light range in response to absorption of radiation in a second wavelength band in the UV or visible light range, one or more (meth)acrylate monomers, and a photoinitiator that initiates polymerization of the one or more (meth)acrylate monomers in response to absorption of radiation in the second wavelength band. The second wavelength band is different than the first wavelength band. A light-emitting device includes a plurality of light-emitting diodes and the cured photocurable composition in contact with a surface through which radiation in a first wavelength band in the UV or visible light range is emitted from each of the light-emitting diodes.
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公开(公告)号：US20200303616A1
公开(公告)日：2020-09-24
申请号：US16823206
申请日：2020-03-18
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Zihao Yang , Nag B. Patibandla , Ludovic Godet , Yong Cao , Daniel Lee Diehl , Zhebo Chen
Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.
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公开(公告)号：US10109481B2
公开(公告)日：2018-10-23
申请号：US14410790
申请日：2013-07-01
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Vivek Agrawal , Anantha Subramani , Daniel Lee Diehl , Xianmin Tang
IPC: H01L21/02 , H01L21/3065 , H01L21/322 , H01J37/34 , C23C14/00 , C23C14/06
Abstract: Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.
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Patent Agency Ranking
公开(公告)号：US20180006083A1
公开(公告)日：2018-01-04
申请号：US15270763
申请日：2016-09-20
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Sivapackia Ganapathiappan , Boyi Fu , Hou T. Ng , Nag B. Patibandla
CPC classification number: H01L27/156 , H01L21/6835 , H01L22/22 , H01L24/741 , H01L24/75 , H01L24/83 , H01L24/97 , H01L33/48 , H01L2221/68368 , H01L2224/7598 , H01L2224/95136
Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.
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公开(公告)号：US09478697B2
公开(公告)日：2016-10-25
申请号：US14538766
申请日：2014-11-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Sriskantharajah Thirunavukarasu , Mingwei Zhu , Karthik Elumalai , Thean Ming Tan , Yong Cao , Daniel Lee Diehl , Nag Patibandla
CPC classification number: H01L33/0075 , H01L21/68771 , H01L33/0066 , H01L33/0079
Abstract: In some embodiments, a substrate carrier for holding a plurality of substrates comprises a disk formed of a continuous material to a nominal dimension which is approximately a multiple of a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices. In an embodiment, the disk is formed symmetrically about a central axis and defines a substantially planar upper surface. A first pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the first pair of pockets are bisected by a first reference plane passing through the central axis. A second pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the second pair of pockets are bisected by a second reference plane passing through the central axis.
Abstract translation: 在一些实施例中，用于保持多个基板的基板载体包括由连续材料形成的标称尺寸的盘，其大约是用于制造发光二极管器件的标准基板尺寸的标称尺寸的倍数。 在一个实施例中，盘围绕中心轴对称地形成，并且限定了基本平坦的上表面。 在盘的上表面中限定第一对凹穴，其中盘和第一对凹穴中的每一个由穿过中心轴线的第一参考平面对分。 在盘的上表面中限定第二对凹穴，其中盘和第二对凹穴中的每一个通过穿过中心轴线的第二参考平面对分。
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公开(公告)号：US12249489B2
公开(公告)日：2025-03-11
申请号：US18131997
申请日：2023-04-07
Applicant: Applied Materials, Inc.
Inventor： Yue Chen , Jinyu Lu , Yongmei Chen , Jinxin Fu , Zihao Yang , Mingwei Zhu , Takashi Kuratomi , Rami Hourani , Ludovic Godet , Qun Jing , Jingyi Yang , David Masayuki Ishikawa
Abstract: A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or more process gases to the interior volume of the process chamber, and generating a plasma of the one or more process gases in the interior volume for a first time period when the optical device is on the substrate support, and stopping the plasma after the first time period. A carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% by the plasma.
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公开(公告)号：US12185643B2
公开(公告)日：2024-12-31
申请号：US18177096
申请日：2023-03-01
Applicant: Applied Materials, Inc.
Inventor： Zihao Yang , Mingwei Zhu , Shriram Mangipudi , Mohammad Kamruzzaman Chowdhury , Shane Lavan , Zhebo Chen , Yong Cao , Nag B. Patibandla
Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
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公开(公告)号：US12096701B2
公开(公告)日：2024-09-17
申请号：US18200388
申请日：2023-05-22
Applicant: Applied Materials, Inc.
Inventor： Zihao Yang , Mingwei Zhu , Shriram Mangipudi , Mohammad Kamruzzaman Chowdhury , Shane Lavan , Zhebo Chen , Yong Cao , Nag B. Patibandla
IPC: H10N60/01
CPC classification number: H10N60/0241 , H10N60/0156
Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
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