公开(公告)号：US20110101451A1

公开(公告)日：2011-05-05

申请号：US12984934

申请日：2011-01-05

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Ralf Erichsen ,  Hans Weber ,  Oliver Haeberlen ,  Franz Hirler

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Ralf Erichsen ,  Hans Weber ,  Oliver Haeberlen ,  Franz Hirler

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L27/0629 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7804

摘要： A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.

摘要翻译： 描述了具有半导体本体的半导体部件，该半导体本体具有第一和第二侧面，边缘和与横向方向上的边缘相邻的边缘区域。

公开(公告)号：US07916493B2

公开(公告)日：2011-03-29

申请号：US11536384

申请日：2006-09-28

申请人： Friedrich Kroener ,  Anton Mauder

发明人： Friedrich Kroener ,  Anton Mauder

IPC分类号： H05K7/00

CPC分类号： H01L23/49833 ,  H01L23/3733 ,  H01L24/33 ,  H01L25/162 ,  H01L25/50 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01041 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K1/144 ,  H05K1/185 ,  H01L2924/00

摘要： A power semiconductor module has a controllable semiconductor chip (50), a first printed circuit board (1), a second printed circuit board (2), and also has one or a plurality of passive components (13, 18). The first printed circuit board (1) may have a conductor track structure (12, 13, 14), and the second printed circuit board (2) may have a conductor track structure (21, 22, 23, 24). Furthermore, an opening (19) in which the semiconductor chip (50) is arranged can be provided in the first printed circuit board (1). Furthermore, at least one passive component (13, 18) can be arranged on the first printed circuit board (1) or on the second printed circuit board (2).

摘要翻译： 功率半导体模块具有可控半导体芯片（50），第一印刷电路板（1），第二印刷电路板（2），并且还具有一个或多个无源部件（13,18）。 第一印刷电路板（1）可以具有导体轨道结构（12,13,14），并且第二印刷电路板（2）可以具有导体轨道结构（21,22,23,24）。 此外，在第一印刷电路板（1）中可以设置有布置有半导体芯片（50）的开口（19）。 此外，至少一个无源部件（13,18）可以布置在第一印刷电路板（1）上或第二印刷电路板（2）上。

公开(公告)号：US07812427B2

公开(公告)日：2010-10-12

申请号：US11757451

申请日：2007-06-04

申请人： Anton Mauder ,  Hans-Peter Felsl ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Peter Felsl ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze

IPC分类号： H01L29/06

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L29/063 ,  H01L29/7395 ,  H01L29/74

摘要： A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by a plurality of third semiconductor zones of a second conductivity type that is opposite to the first conductivity type. The third semiconductor zones are spaced apart from one another in a lateral direction. In addition, provided within the semiconductor body is a field stop zone spaced apart from the second semiconductor zone, thereby reducing an electric field in the direction toward the second semiconductor zone.

摘要翻译： 半导体部件包括半导体主体和用作后侧发射极的第一导电类型的第二半导体区。 第二半导体区域之前是与第一导电类型相反的多个第二导电类型的第三半导体区域。 第三半导体区域在横向彼此间隔开。 此外，设置在半导体本体内的是与第二半导体区间隔开的场阻挡区域，从而减小朝向第二半导体区域的方向的电场。

公开(公告)号：US20100210091A1

公开(公告)日：2010-08-19

申请号：US12769976

申请日：2010-04-29

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Hans-Joerg Timme ,  Wolfgang Werner

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Hans-Joerg Timme ,  Wolfgang Werner

IPC分类号： H01L21/762 ,  H01L21/461 ,  H01L21/22 ,  H01L21/38 ,  H01L21/302

CPC分类号： H01L21/26506 ,  H01L21/263 ,  H01L21/3242

摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.

摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。

公开(公告)号：US07696600B2

公开(公告)日：2010-04-13

申请号：US11713226

申请日：2007-03-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

IPC分类号： H01L29/10 ,  H01L29/72

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。

公开(公告)号：US07560833B2

公开(公告)日：2009-07-14

申请号：US11541446

申请日：2006-09-29

申请人： Bernhard Strzalkowski ,  Anton Mauder

发明人： Bernhard Strzalkowski ,  Anton Mauder

IPC分类号： H01H47/00 ,  H01H9/54 ,  H01L27/04 ,  H01L29/02

CPC分类号： H02M1/08 ,  H01L27/08 ,  H01L2224/05554 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/13055 ,  H01L2924/13091 ,  H03K17/6874 ,  H03K17/691 ,  H03K2217/0036 ,  Y10T307/747 ,  Y10T307/937 ,  H01L2924/00

摘要： A drive circuit for a semiconductor switching element includes a transformer, first and second driver circuits, and a rectifier element. The drive circuit produces a drive signal based on an input signal. The transformer has a primary winding and a secondary winding, and is integrated in a first semiconductor body. The first driver circuit is coupled to receive the input signal, and has at least one output which is coupled to the primary winding of the transformer. The first driver circuit also includes a first supply input connected to receive a first supply potential. The second driver circuit is operable to provide the drive signal and has at least one input coupled to the secondary winding. The second driver circuit has a second supply input. The rectifier element is connected between the first and the second supply input, and is integrated in the first semiconductor body.

摘要翻译： 用于半导体开关元件的驱动电路包括变压器，第一和第二驱动电路以及整流元件。 驱动电路基于输入信号产生驱动信号。 变压器具有初级绕组和次级绕组，并且集成在第一半导体本体中。 第一驱动电路被耦合以接收输入信号，并且具有耦合到变压器的初级绕组的至少一个输出。 第一驱动器电路还包括连接以接收第一电源电位的第一电源输入。 第二驱动器电路可操作以提供驱动信号并且具有耦合到次级绕组的至少一个输入。 第二驱动电路具有第二电源输入。 整流元件连接在第一和第二电源输入之间，并且集成在第一半导体本体中。

公开(公告)号：US07560783B2

公开(公告)日：2009-07-14

申请号：US11455397

申请日：2006-06-19

申请人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

发明人： Holger Kapels ,  Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack ,  Jenoe Tihanyi

IPC分类号： H01L29/772

CPC分类号： H01L29/7805 ,  H01L21/28512 ,  H01L21/28568 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/456 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/8613

摘要： The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.

摘要翻译： 本发明涉及包含半导体层并包含施加到半导体层的金属化的金属 - 半导体接触，将高掺杂浓度引入到半导体层中，使得在金属化和金属化之间形成非反应性金属 - 半导体接触 半导体层。 金属化和/或半导体层以这样的方式形成，使得只有一部分引入的掺杂浓度是电活性的，并且仅当这一部分掺杂浓度掺杂的半导体层仅在与...接触时形成肖特基接触 金属化。 此外，本发明涉及一种半导体部件，其包括漏区，嵌入其中的主体区和再次嵌入其中的源区。 半导体部件具有金属半导体触点，触点仅与源极区域接触而不与主体区域接触。

公开(公告)号：US20080265315A1

公开(公告)日：2008-10-30

申请号：US12112710

申请日：2008-04-30

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7397

摘要： A semiconductor device with a semiconductor body and to a method for producing it. In one embodiment, the semiconductor body has first electrodes which contact first highly doped semiconductor zones and complementary-conduction body zones surrounding the first semiconductor zones. The semiconductor body has a second electrode which contacts a second highly doped semiconductor zone. Between the second semiconductor zone and the body zones, a drift zone is arranged. Control electrodes which are insulated from the semiconductor body by a gate oxide and act on the body zones for controlling the semiconductor device are arranged on the semiconductor body. The body zones have minority charge carrier injector zones with complementary conduction to the body zones, arranged between the first semiconductor zones and the drift zone.

摘要翻译： 具有半导体本体的半导体器件及其制造方法。 在一个实施例中，半导体本体具有接触第一高度掺杂半导体区域和围绕第一半导体区域的互补导电体区域的第一电极。 半导体本体具有接触第二高掺杂半导体区的第二电极。 在第二半导体区域和体区之间布置漂移区。 通过栅极氧化物与半导体本体绝缘并作用于体区的用于控制半导体器件的控制电极被布置在半导体本体上。 身体区域具有少数电荷载体注射器区域，其布置在第一半导体区域和漂移区域之间，与身体区域互补导电。

公开(公告)号：US20070069257A1

公开(公告)日：2007-03-29

申请号：US11521075

申请日：2006-09-14

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/76

CPC分类号： H01L29/7397 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/872

摘要： A power semiconductor component includes a semiconductor body and a field electrode. The semiconductor body has a drift zone of a first conduction type and a further component defining a junction therebetween. The junction is configured to cause a space charge zone to propagate when a reverse voltage is applied to the junction. The field electrode is arranged adjacent to the drift zone, and is insulated from the semiconductor body by at least a dielectric layer. The dielectric layer has a first section and a second section, the first section arranged nearer to the junction and having a higher dielectric constant than the second section.

摘要翻译： 功率半导体部件包括半导体本体和场电极。 半导体本体具有第一导电类型的漂移区和限定它们之间的连接的另外的元件。 结点被配置为当反向电压施加到结点时使空间电荷区传播。 场电极被布置成与漂移区相邻，并且通过至少介电层与半导体本体绝缘。 电介质层具有第一部分和第二部分，第一部分布置成更靠近结并且具有比第二部分更高的介电常数。

公开(公告)号：US07015562B2

公开(公告)日：2006-03-21

申请号：US10391844

申请日：2003-03-18

申请人： Anton Mauder ,  Alfred Porst

发明人： Anton Mauder ,  Alfred Porst

IPC分类号： H01L29/00

CPC分类号： H01L29/8611 ,  H01L29/32

摘要： A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×1017 to 3×1018 dopant atoms per cm3 for the anode emitter, especially on its surface 1019 dopant atoms per cm3 or more for the cathode emitter and approximately 1016 dopant atoms per cm3 for the blocking function of an anode-side zone.

摘要翻译： 高压二极管具有阳极区域和阴极区域的掺杂剂浓度，其基本功能是静态阻挡和导电性。 对于阳极发射器，特别是在其表面上，掺杂剂浓度范围从1×10 17至3×10 8掺杂剂原子/ cm 3， / SUP>掺杂剂原子/ cm 3以上，对于阴极发射体，每cm 3的约10 16个掺杂剂原子/ 阳极侧区。