公开(公告)号：US20090135526A1

公开(公告)日：2009-05-28

申请号：US11989380

申请日：2006-07-26

申请人： Bernard Dieny ,  Virgile Javerliac

发明人： Bernard Dieny ,  Virgile Javerliac

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： The device comprises two magnetoresistive elements (10, 20) placed relative to each other in magnetostatic interaction in such a manner that a magnetic flux passing between these elements (10, 20) closes through soft ferromagnetic layers (26, 27) of said elements (10, 20). A write device (15) is associated with the elements (10, 20) to control the magnetization of each soft layer (26, 27). A read conductor line (11, 12, 13, 14) is associated with each magnetoresistive element (10, 20) to detect the magnetic state of the soft layer (26, 27) by measuring the corresponding magnetoresistance. The soft ferromagnetic layers (26, 27) of the elements (10, 20) remain oriented substantially in antiparallel relative to each other, while the hard ferromagnetic layers (24) of said elements (10, 20) are oriented substantially in parallel.

摘要翻译： 该装置包括以静磁相互作用相对于彼此放置的两个磁阻元件（10,20），使得通过这些元件（10,20）之间的磁通量通过所述元件的软铁磁层（26,27） 10，20）。 写装置（15）与元件（10,20）相关联，以控制每个软层（26,27）的磁化。 读导体线（11,12,13,14）与每个磁阻元件（10,20）相关联，以通过测量相应的磁阻来检测软层（26,27）的磁状态。 元件（10,20）的软铁磁层（26,27）保持基本相对于彼此反平行取向，而所述元件（10,20）的硬铁磁层（24）基本上平行取向。

公开(公告)号：US20080247072A1

公开(公告)日：2008-10-09

申请号：US12059869

申请日：2008-03-31

申请人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

发明人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

IPC分类号： G11B5/02

CPC分类号： G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10S977/933 ,  Y10S977/935

摘要： This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell; one so-called “free” magnetic storage layer, the magnetization direction of which is variable; one insulating layer sandwiched between the reference layer and the storage layer. The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

摘要翻译： 这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向 的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。 由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。

公开(公告)号：US06987651B2

公开(公告)日：2006-01-17

申请号：US11091623

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US20050195658A1

公开(公告)日：2005-09-08

申请号：US11062926

申请日：2005-02-23

申请人： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

发明人： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  G11C16/06

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/1659 ,  G11C11/1675

摘要： The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.

摘要翻译： 存储器在半导体衬底上包括以行和列布置的每个单元矩阵，并且每个被设计为存储信息位。 列的每个单元包括磁性隧道结，其具有分别连接到线路导体的线路端子和列端子，并且通过晶体管连接到与所述列相关联的第一列导体和第一相邻列。 晶体管的栅极连接到栅极导体。 所述列的每个隧道结的列端子通过附加晶体管连接到与所述列相关联的第二列导体和第二相邻列。 附加晶体管的栅极连接到附加栅极导体。 与单元相关联的两个晶体管可以具有公共电极。

公开(公告)号：US20050168879A1

公开(公告)日：2005-08-04

申请号：US11091099

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型自旋阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

公开(公告)号：US06882509B2

公开(公告)日：2005-04-19

申请号：US10791021

申请日：2004-03-02

申请人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng T. Horng ,  Kochan Ju ,  Simon Liao

发明人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng T. Horng ,  Kochan Ju ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/00 ,  H01F10/06 ,  H01F10/12 ,  H01F10/14 ,  H01F10/16 ,  H01F10/18 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/12944 ,  Y10T428/2495

摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.

摘要翻译： 公开了一种制造SVGMR传感器元件的方法。 在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。 金属氧化物缓冲层增强了镜面散射。 在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。 第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

公开(公告)号：US5598308A

公开(公告)日：1997-01-28

申请号：US290324

申请日：1994-08-15

申请人： Bernard Dieny ,  Bruce A. Gurney ,  Stuart S. P. Parkin ,  Ian L. Sanders ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

发明人： Bernard Dieny ,  Bruce A. Gurney ,  Stuart S. P. Parkin ,  Ian L. Sanders ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

IPC分类号： G11B5/39 ,  G01R33/09 ,  G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A magnetoresistive (MR) sensor comprising a layered structure having at least one trilayer comprising a first and a second thin film ferromagnetic layers separated by and in interfacial contact with a third thin film non-metallic magnetic layer. A fourth thin film layer of material is within the first ferromagnetic layer, and the fourth layer has a thickness between a fraction of a monolayer and several monolayers and is located at predetermined distance from the interface between the first and third layers. A current flow is produced through the MR sensor and variations in resistivity of the MR sensor produced by rotation of the magnetization in one or both of the ferromagnetic layers is sensed as a function of the magnetic field being sensed.

摘要翻译： 一种磁阻（MR）传感器，包括具有至少一个三层的层状结构，所述三层包括由第三薄膜非金属磁性层隔开并与其界面接触的第一和第二薄膜铁磁层。 第四薄膜层材料在第一铁磁层内，第四层的厚度介于单层的几分之一和几个单层之间，并且位于与第一和第三层之间的界面预定距离处。 通过MR传感器产生电流，并且感测由一个或两个铁磁层中的磁化的旋转而产生的MR传感器的电阻率的变化，作为被感测的磁场的函数。

公开(公告)号：US5301079A

公开(公告)日：1994-04-05

申请号：US977382

申请日：1992-11-17

申请人： William C. Cain ,  Bernard Dieny ,  Robert E. Fontana, Jr. ,  Virgil S. Speriosu

发明人： William C. Cain ,  Bernard Dieny ,  Robert E. Fontana, Jr. ,  Virgil S. Speriosu

IPC分类号： G01R33/09 ,  G11B5/02 ,  G11B5/39 ,  H01L43/08 ,  G11B5/30

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a non-magnetic metallic layer, the magnetic easy axis of each of the ferromagnetic layers being aligned along the longitudinal axis of the ferromagnetic layers and perpendicular to the trackwidth of an adjacent magnetic storage medium. The sense current flowing in the sensor element generates a bias field which sets the direction of magnetization in each ferromagnetic layer at an equal, but opposite, angle .theta. with respect to the magnetic easy axis thus providing an angular separation of 2.theta. in the absence of an applied magnetic signal. The magnetizations of both ferromagnetic layers are responsive to an applied magnetic field to change their angular separation by an amount 2.delta..theta..

摘要翻译： 基于自旋阀效应的磁阻读取传感器，其中读取元件电阻的分量随着两个相邻磁性层中的磁化方向之间的角度的余弦而变化。 传感器读取元件包括由非磁性金属层隔开的两个相邻的铁磁层，每个铁磁层的磁性容易轴沿着铁磁层的纵向轴线并且垂直于相邻磁性存储介质的轨道宽度排列。 在传感器元件中流动的感测电流产生偏置场，其将每个铁磁层中的磁化方向设置成相对于易磁化轴相等但相反的角度（θ），从而提供2（θ）的角度间隔， 在没有施加的磁信号的情况下。 两个铁磁层的磁化响应于施加的磁场来改变它们的角度间隔2（delta）（θ）。

公开(公告)号：US08811073B2

公开(公告)日：2014-08-19

申请号：US13820215

申请日：2011-08-31

申请人： Bernard Dieny

发明人： Bernard Dieny

IPC分类号： G11C11/00 ,  H01L27/22 ,  H01F10/32 ,  H01L43/08 ,  G11C11/16 ,  B82Y25/00

CPC分类号： G11C11/161 ,  B82Y25/00 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

摘要： A magnetic device includes a reference layer, the magnetization direction of which is fixed, and a storage layer, the magnetization direction of which is variable. In a write mode, the magnetization direction of the storage layer is changed so as to store a “1” or a “0” in the storage layer. In a reading mode, the resistance of the magnetic device is measured so as to know what is stored in the storage layer. The magnetic device also includes a control layer, the magnetization direction of which is variable. The magnetization direction of the control layer is controlled so as to increase the effectiveness of the spin-transfer torque in the event writing to the storage layer is desired, and to decrease the effectiveness of the spin-transfer torque in the event reading the information contained in the storage layer, without modifying the information, is desired.

摘要翻译： 磁性装置包括其磁化方向固定的参考层和其磁化方向可变的存储层。 在写入模式中，存储层的磁化方向被改变以在存储层中存储“1”或“0”。 在读取模式中，测量磁性装置的电阻以便知道存储层中存储的内容。 磁性装置还包括其磁化方向可变的控制层。 控制层的磁化方向被控制，以便在需要向存储层写入的情况下提高自旋转移转矩的有效性，并且在读取包含的信息的情况下降低自旋转移转矩的有效性 在存储层中，不需要修改信息。

公开(公告)号：US08624590B2

公开(公告)日：2014-01-07

申请号：US13103581

申请日：2011-05-09

申请人： Bernard Dieny

发明人： Bernard Dieny

IPC分类号： G01R33/09

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/398 ,  H01L43/08

摘要： A magnetoresistive sensor including: a first pinned-magnetization magnetic layer, called pinned layer; a free-magnetization magnetic layer, called sensitive layer, of which the magnetization, in the absence of an external field, is substantially orthogonal to the magnetization of the pinned layer, the pinned and sensitive layers being separated by a first separating layer for magnetic uncoupling; and a layer, called lateral coupling layer, located on the side of the sensitive layer opposite that of the separating layer, the lateral coupling layer serving to control the lateral spin transfer.

摘要翻译： 磁阻传感器包括：称为固定层的第一钉扎磁化磁性层; 称为敏感层的自由磁化磁性层，其中在没有外部场的情况下，磁化与被钉扎层的磁化基本上正交的磁化，被钉扎和敏感层被第一分离层分开，用于磁解耦 ; 以及位于敏感层的与分离层相反的一侧的称为横向耦合层的层，横向耦合层用于控制横向自旋转移。