公开(公告)号：US08815688B2

公开(公告)日：2014-08-26

申请号：US13550920

申请日：2012-07-17

申请人： Jae Hoon Lee ,  Ki Se Kim ,  Jung Hee Lee ,  Ki Sik Im ,  Dong Seok Kim

发明人： Jae Hoon Lee ,  Ki Se Kim ,  Jung Hee Lee ,  Ki Sik Im ,  Dong Seok Kim

IPC分类号： H01L29/778

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/2003

摘要： A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.

摘要翻译： 制造功率器件的方法包括在衬底上形成第一漂移区。 通过图案化第一漂移区域形成沟槽。 通过在沟槽中生长氮化镓（GaN）并且交替地设置第一漂移区和第二漂移区，形成第二漂移区。 源电极接触层形成在第二漂移区上。 在源电极接触层上形成源电极和栅电极。 在基板的与第一漂移区域相反的一侧上形成漏电极。

公开(公告)号：US08648459B2

公开(公告)日：2014-02-11

申请号：US13605112

申请日：2012-09-06

申请人： Jae Hoon Lee

发明人： Jae Hoon Lee

IPC分类号： H01L23/04 ,  H01L21/28

CPC分类号： H01L24/81 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L2221/6835 ,  H01L2224/13013 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/1329 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/48 ,  H01L2224/81005 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/8185 ,  H01L2924/1032 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/0503 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/00

摘要： A nitride based semiconductor package includes a nitride based semiconductor device, a package substrate, and a bonding substrate. The semiconductor device includes, on a surface thereof, a first electrode pattern having a source electrode, a drain electrode and a gate electrode. The bonding substrate includes, on a first surface thereof, a second electrode pattern corresponding to the first electrode pattern, and at least one first groove pattern. The first groove pattern exposes the second electrode pattern. The first electrode pattern is received in the at least one first groove pattern. The second electrode pattern is bonded to the first electrode pattern received in the at least one first groove pattern. A second surface of the bonding substrate is bonded to the package substrate.

摘要翻译： 氮化物基半导体封装包括氮化物基半导体器件，封装衬底和接合衬底。 半导体器件在其表面上包括具有源电极，漏电极和栅电极的第一电极图案。 接合基板在其第一表面上包括对应于第一电极图案的第二电极图案和至少一个第一凹槽图案。 第一凹槽图案暴露第二电极图案。 第一电极图案被接收在至少一个第一凹槽图案中。 第二电极图案被接合到以至少一个第一凹槽图案接收的第一电极图案。 接合基板的第二表面接合到封装基板。

公开(公告)号：US08564022B2

公开(公告)日：2013-10-22

申请号：US13353990

申请日：2012-01-19

申请人： Jae Hoon Lee

发明人： Jae Hoon Lee

IPC分类号： H01L29/06 ,  H01L29/66

CPC分类号： H01L29/0615 ,  H01L29/1058 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified.

摘要翻译： 提供电力设备。 功率器件可以包括对应于栅电极图案的部分中的二维电子气（2-DEG）层，因为在形成第一氮化物层之后在栅电极图案的下部还形成第二氮化物层 因此，能够进行常关动作。 因此，功率器件可以基于栅极的电压来调整2-DEG层的产生，并且可以降低功耗。 功率器件可以只再生对应于栅极电极图案的部分，或者可以蚀刻除了与栅电极图案对应的部分之外的部分，因此凹陷处理可以是不允许的，可以确保功率器件的再现性，并且 制造过程可以被简化。

公开(公告)号：US20130148016A1

公开(公告)日：2013-06-13

申请号：US13408995

申请日：2012-02-29

申请人： Seung Yun Oh ,  Jae Hoon Lee ,  In Taek Song ,  Tae Young Kim

发明人： Seung Yun Oh ,  Jae Hoon Lee ,  In Taek Song ,  Tae Young Kim

IPC分类号： H04N5/225

CPC分类号： H04N5/2253

摘要： Disclosed herein is a camera module. The camera module according to preferred embodiments of the present invention includes: a housing; a printed circuit board disposed in the housing and having a heat dissipating hole formed at a first side thereof; an image sensor bonded to the printed circuit board and disposed on one surface of the heat dissipating hole; and a heat dissipating part having one side contacting the image sensor and the printed circuit board through the heat dissipating hole and the other side disposed at the outside of the housing to discharge heat generated from the image sensor and the printed circuit board to the outside of the housing.

摘要翻译： 这里公开了一种相机模块。 根据本发明的优选实施例的相机模块包括：壳体; 布置在所述壳体中并具有在其第一侧形成的散热孔的印刷电路板; 结合到印刷电路板并设置在散热孔的一个表面上的图像传感器; 以及散热部，其具有通过所述散热孔与所述图像传感器和所述印刷电路板接触的一侧，所述散热部设置在所述壳体的外部，以将从所述图像传感器和所述印刷电路板产生的热量排出到 住房。

公开(公告)号：US20130009164A1

公开(公告)日：2013-01-10

申请号：US13353990

申请日：2012-01-19

申请人： Jae Hoon Lee

发明人： Jae Hoon Lee

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0615 ,  H01L29/1058 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified.

摘要翻译： 提供电力设备。 功率器件可以包括对应于栅电极图案的部分中的二维电子气（2-DEG）层，因为在形成第一氮化物层之后在栅电极图案的下部还形成第二氮化物层 因此，能够进行常关动作。 因此，功率器件可以基于栅极的电压来调整2-DEG层的产生，并且可以降低功耗。 功率器件可以只再生对应于栅极电极图案的部分，或者可以蚀刻除了与栅电极图案对应的部分之外的部分，因此凹陷处理可以是不允许的，可以确保功率器件的再现性，并且 制造过程可以被简化。

公开(公告)号：US08301346B2

公开(公告)日：2012-10-30

申请号：US12409842

申请日：2009-03-24

申请人： Jae Hoon Lee

发明人： Jae Hoon Lee

IPC分类号： G06F19/00

CPC分类号： F16H61/431 ,  F16H61/4061 ,  F16H61/4148 ,  F16H61/421

摘要： A traveling system for construction equipment is provided, which can secure an initial traveling manipulability regardless of a low-speed traveling or a high-speed traveling. If the high-speed traveling is selected and the traveling is manipulated, the inclination angle of a swash plate of a hydraulic pump is variably controlled, so that the discharge flow rate of the hydraulic pump exceeds a predetermined flow rate in comparison to the low-speed traveling.

摘要翻译： 提供了一种用于施工设备的行驶系统，无论低速行驶还是高速行驶，都能确保初始的行驶操纵性。 如果选择高速行驶并且行驶被操纵，则液压泵的斜盘的倾斜角度被可变地控制，使得液压泵的排出流量与低速行驶相比， 速度旅行。

公开(公告)号：US20110110127A1

公开(公告)日：2011-05-12

申请号：US12674618

申请日：2008-08-22

申请人： Jae Hoon Lee

发明人： Jae Hoon Lee

IPC分类号： H02M1/42

CPC分类号： G05F1/70

摘要： The present invention relates to a power factor correction circuit that can reduce distortion of input current in a switching mode power supply. The power factor correction circuit provided in the present invention basically comprises a first inductor which is electrically connected at a first end thereof to an input terminal, a second coil that is coupled to the first inductor to form an induced voltage, a switch electrically connected to the a second terminal of the first inductor, and a switching control unit for controlling turn-on and turn-off of the switch. In such a power factor correction circuit of the present invention, the switching control unit is configured to differently set a turn-on period of the switch depending on the input voltage by generating a signal for controlling the turn-off of the switch using a second coil voltage induced at the secondary coil of the inductor by input voltage or a directly sensed input voltage. Accordingly, distortion of input current can be effectively corrected.

摘要翻译： 本发明涉及能够减少开关模式电源中的输入电流的失真的功率因数校正电路。 本发明提供的功率因数校正电路基本上包括：第一电感器，其第一端电连接到输入端子;第二线圈，其耦合到第一电感器以形成感应电压，开关电连接到 第一电感器的第二端子和用于控制开关的接通和断开的开关控制单元。 在本发明的这种功率因数校正电路中，开关控制单元被配置为根据输入电压不同地设置开关的导通周期，通过产生用于控制开关的关断的信号，使用第二 通过输入电压或直接感应的输入电压在电感器的次级线圈感应的线圈电压。 因此，可以有效地校正输入电流的失真。

公开(公告)号：US07831755B2

公开(公告)日：2010-11-09

申请号：US12034053

申请日：2008-02-20

申请人： Kil-Joong Yun ,  Seon Taek Kim ,  Jae Hoon Lee

发明人： Kil-Joong Yun ,  Seon Taek Kim ,  Jae Hoon Lee

IPC分类号： H05K7/10 ,  G06F13/14 ,  G06F13/36

CPC分类号： G06F13/385

摘要： A method for establishing an interface between a host and a plurality of memory devices of a system that utilizes a Multimedia Card (MMC) or Digital (SD) protocol according to an interleaving scheme. A host sequentially transmits a first sequence of commands and data to a system bus in order to allow a first memory device among the memory devices to perform a first operation. The host then transmits a second sequence of commands and data to the system bus to allow a second memory device among the memory devices to perform a second operation after transmitting the first sequence of commands and data.

摘要翻译： 一种用于根据交织方案在主机与利用多媒体卡（MMC）或数字（SD））协议的系统的存储设备之间建立接口的方法。 主机顺序地向系统总线发送第一序列命令和数据，以便允许存储器件中的第一存储器件执行第一操作。 然后主机向系统总线发送第二序列命令和数据，以允许存储器件中的第二存储器件在发送第一命令序列和数据之后执行第二操作。

公开(公告)号：US20100227640A1

公开(公告)日：2010-09-09

申请号：US12457103

申请日：2009-06-01

申请人： Jong Hwan Kim ,  Duck Moon Shin ,  June Choe ,  Jae Hoon Lee ,  Ung Je Jo ,  Min Woo Kim ,  Jeong Hyuk Yoon ,  Ho Young Hur

发明人： Jong Hwan Kim ,  Duck Moon Shin ,  June Choe ,  Jae Hoon Lee ,  Ung Je Jo ,  Min Woo Kim ,  Jeong Hyuk Yoon ,  Ho Young Hur

IPC分类号： G09G5/00 ,  G08B6/00 ,  H04M1/00

CPC分类号： H04M19/04 ,  H04M19/047

摘要： A method of controlling a mobile terminal, and which includes receiving an blow signal corresponding to a blowing action into a microphone of the mobile terminal, and generating at least one of a visual effect and a vibration effect based on characteristics of the blow signal.

摘要翻译： 一种控制移动终端的方法，包括：接收与所述移动终端的麦克风相对应的吹奏动作的吹奏信号，并且基于所述吹奏信号的特性产生视觉效果和振动效果中的至少一个。

公开(公告)号：US07436001B2

公开(公告)日：2008-10-14

申请号：US11490254

申请日：2006-07-21

申请人： Jae Hoon Lee ,  Bang Won Oh ,  Hee Seok Choi ,  Jeong Tak Oh ,  Seok Beom Choi ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Bang Won Oh ,  Hee Seok Choi ,  Jeong Tak Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC分类号： H01L27/15

CPC分类号： H01L33/22 ,  H01L33/14

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。 第一n型GaN层具有具有多个突起的不均匀图案。 第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。 有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。 在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。