公开(公告)号：US20070032077A1

公开(公告)日：2007-02-08

申请号：US11161530

申请日：2005-08-08

申请人： Tzung-Yu Hung ,  Chien-Chung Huang ,  Chao-Ching Hsieh ,  Chia-Lin Hsu

发明人： Tzung-Yu Hung ,  Chien-Chung Huang ,  Chao-Ching Hsieh ,  Chia-Lin Hsu

IPC分类号： H01L21/44

CPC分类号： H01L21/76828 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76883

摘要： A method for manufacturing a metal plug is described. A substrate with an opening is provided. Then, a barrier layer is formed on a surface of the opening. Thereafter, a metallic layer is formed over the substrate so that the opening is also filled. Next, a planarization process is performed to remove the metallic layer outside the opening. One main feature of the present invention is the performance of at least a high temperature treatment after the metallic layer is formed. Due to the high temperature treatment, internal stress between different layers is released.

摘要翻译： 对金属插头的制造方法进行说明。 提供具有开口的基板。 然后，在开口的表面上形成阻挡层。 此后，在基板上形成金属层，使得开口也被填充。 接下来，进行平面化处理以去除开口外部的金属层。 本发明的一个主要特征是在形成金属层之后进行至少高温处理。 由于高温处理，不同层之间的内部应力被释放。

公开(公告)号：US20060211242A1

公开(公告)日：2006-09-21

申请号：US11308341

申请日：2006-03-17

申请人： Chia-Lin Hsu ,  Chih-Chan Yu ,  Chien-Chung Huang

发明人： Chia-Lin Hsu ,  Chih-Chan Yu ,  Chien-Chung Huang

IPC分类号： H01L21/44

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76883

摘要： A method of forming a plug is provided. First, a substrate comprising at least a dielectric layer is provided, and a patterned hard mask is formed on the dielectric layer to define a position of at least a plug hole. Subsequently, the dielectric layer is etched for forming the plug hole. A barrier layer and a conductive layer are formed on the substrate, and the plug hole is filled by the conductive layer. Thereafter, first, second, and third chemical mechanical polishing processes are performed in turn. Finally, a fourth chemical mechanical polishing process is performed to remove portions of the conductive layer.

摘要翻译： 提供一种形成插头的方法。 首先，提供包括至少介电层的基板，并且在电介质层上形成图案化的硬掩模，以限定至少一个插塞孔的位置。 随后，蚀刻电介质层以形成插塞孔。 在基板上形成阻挡层和导电层，并且通过导电层填充插塞孔。 此后，依次执行第一，第二和第三化学机械抛光工艺。 最后，执行第四种化学机械抛光工艺以去除部分导电层。

公开(公告)号：US20060199305A1

公开(公告)日：2006-09-07

申请号：US11164488

申请日：2005-11-24

申请人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Tsai-Fu Chen ,  Wen-Han Hung

发明人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Tsai-Fu Chen ,  Wen-Han Hung

IPC分类号： H01L21/00 ,  H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3185 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

摘要： A method for fabricating an ultra-high tensile-stressed nitride film is disclosed. A PECVD process is first performed to deposit a transitional silicon nitride film over a substrate. The transitional silicon nitride film has a first concentration of hydrogen atoms. The transitional silicon nitride film is subjected to UV curing process for reducing the first concentration of hydrogen atoms to a second concentration of hydrogen atoms.

摘要翻译： 公开了一种用于制造超高拉伸应力氮化物膜的方法。 首先执行PECVD处理以在衬底上沉积过渡氮化硅膜。 过渡氮化硅膜具有第一浓度的氢原子。 将过渡氮化硅膜进行UV固化，将氢原子的第一浓度降低至第二浓度的氢原子。

公开(公告)号：US20050283498A1

公开(公告)日：2005-12-22

申请号：US10873553

申请日：2004-06-22

申请人： Wen-Chang Kuo ,  Tien-Der Chiang ,  Chien-Chung Huang ,  Mu-Tsang Lin ,  Yi-Lin Huang ,  Chun-Yi Chen ,  Chi Wang

发明人： Wen-Chang Kuo ,  Tien-Der Chiang ,  Chien-Chung Huang ,  Mu-Tsang Lin ,  Yi-Lin Huang ,  Chun-Yi Chen ,  Chi Wang

IPC分类号： G06F17/30

CPC分类号： G06F16/21

摘要： A method of building a problem troubleshooting database for use in a semiconductor manufacturing system includes storing semiconductor manufacturing problem data in a problem troubleshooting database; storing cause data in the problem troubleshooting database, the cause data being associated with respective problem data; storing solution data in the problem troubleshooting database, the solution data being associated with respective semiconductor manufacturing problem data and cause data; evaluating the effectiveness of the solution data; and updating the solution data with information with respect to the effectiveness determined in the evaluating step.

摘要翻译： 构建用于半导体制造系统的问题故障排除数据库的方法包括将半导体制造问题数据存储在问题故障排除数据库中; 将原因数据存储在问题故障排除数据库中，原因数据与相应的问题数据相关联; 将解决方案数据存储在问题故障排除数据库中，解决方案数据与相应的半导体制造问题数据相关联并导致数据; 评估解决方案数据的有效性; 以及关于在所述评估步骤中确定的有效性的信息来更新所述解决方案数据。

公开(公告)号：US20050055259A1

公开(公告)日：2005-03-10

申请号：US10660287

申请日：2003-09-10

申请人： Wen-Chang Kuo ,  Tien-Der Chiang ,  Chien-Chung Huang ,  Chun-Yi Chen

发明人： Wen-Chang Kuo ,  Tien-Der Chiang ,  Chien-Chung Huang ,  Chun-Yi Chen

IPC分类号： G06Q10/00 ,  G06F17/60

CPC分类号： G06Q10/06311 ,  G06Q10/06 ,  G06Q10/063 ,  G06Q10/06393

摘要： A method and system of providing instructions in addressing an equipment problem are provided. An indication of an equipment problem is checked against a solution database to identify at least one suggested solution to the equipment problem. A suggested solution from the at least one suggested solution is provided. An actual fix solution implemented in association with the equipment problem is recorded.

摘要翻译： 提供了一种提供解决设备问题的指令的方法和系统。 根据解决方案数据库检查设备问题的指示，以识别设备问题的至少一个建议的解决方案。 提供了至少一个建议的解决方案的建议解决方案。 记录与设备问题相关的实际修复解决方案。

公开(公告)号：US09048254B2

公开(公告)日：2015-06-02

申请号：US12629064

申请日：2009-12-02

申请人： Yi-Wei Chen ,  Nien-Ting Ho ,  Chien-Chung Huang ,  Chin-Fu Lin

发明人： Yi-Wei Chen ,  Nien-Ting Ho ,  Chien-Chung Huang ,  Chin-Fu Lin

IPC分类号： H01L29/66 ,  H01L21/28 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/4983 ,  H01L21/2633 ,  H01L21/28026 ,  H01L21/28114 ,  H01L29/401 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66583 ,  H01L29/7833

摘要： A method of forming a semiconductor structure having a metal gate. Firstly, a semiconductor substrate is provided. Subsequently, at least a gate structure is formed on the semiconductor substrate. Afterwards, a spacer structure is formed to surround the gate structure. Then, an interlayer dielectric is formed. Afterwards, a planarization process is performed for the interlayer dielectric. Then, a portion of the sacrificial layer is removed to form an initial etching depth, such that an opening is formed to expose a portion of the spacer structure. The portion of the spacer structure exposed to the opening is removed so as to broaden the opening. Afterwards, remove the sacrificial layer completely via the opening. Finally, a gate conductive layer is formed to fill the opening.

摘要翻译： 一种形成具有金属栅极的半导体结构的方法。 首先，提供半导体衬底。 随后，至少在半导体衬底上形成栅极结构。 之后，形成围绕栅结构的间隔结构。 然后，形成层间电介质。 之后，对层间电介质进行平面化处理。 然后，去除牺牲层的一部分以形成初始蚀刻深度，使得形成开口以露出间隔物结构的一部分。 暴露于开口的间隔结构的部分被去除以扩大开口。 之后，通过开口完全除去牺牲层。 最后，形成栅极导电层以填充开口。

公开(公告)号：US08719109B1

公开(公告)日：2014-05-06

申请号：US11693501

申请日：2007-03-29

申请人： Mehmet A. Elicin ,  Pierre Galin ,  Chien-Chung Huang ,  Vijay Kumar ,  Jonathan D. Phillips ,  Brian J. Saltzman

发明人： Mehmet A. Elicin ,  Pierre Galin ,  Chien-Chung Huang ,  Vijay Kumar ,  Jonathan D. Phillips ,  Brian J. Saltzman

IPC分类号： G06Q30/00

CPC分类号： G06Q30/08

摘要： Techniques are described for facilitating transactions involving items and users in various ways. In some situations, item transactions are coordinated by an automated Item Transaction (or “IT”) system provided via one or more computing systems, such that users of the IT system who have available items are matched with other users of the IT system who desire those items. The types of items being involved in transactions via the IT system may vary, and in some situations may include items such as music CDs, video DVDs, computer games, computer software, etc. The operation of the IT system may be enhanced in various ways, including by selecting appropriate users to receive opportunities to sell items available from those users, such as in a manner to balance supply and demand for items, and by notifying the selected users of those opportunities.

摘要翻译： 描述了以各种方式促进涉及项目和用户的交易的技术。 在某些情况下，项目交易由通过一个或多个计算系统提供的自动化项目事务（或“IT”）系统进行协调，使得具有可用项目的IT系统的用户与期望的IT系统的其他用户匹配 那些项目。 通过IT系统涉及交易的项目类型可能会有所不同，并且在某些情况下可能包括诸如音乐CD，视频DVD，计算机游戏，计算机软件等的项目。可以以各种方式增强IT系统的操作 包括通过选择适当的用户来接收从这些用户那里销售商品的机会，例如以平衡物品的供应和需求的方式，以及通知所选择的用户这些机会。

公开(公告)号：US08350246B2

公开(公告)日：2013-01-08

申请号：US13038612

申请日：2011-03-02

申请人： Mei-Ling Chen ,  Kuo-Chih Lai ,  Su-Jen Sung ,  Chien-Chung Huang ,  Yu-Tsung Lai

发明人： Mei-Ling Chen ,  Kuo-Chih Lai ,  Su-Jen Sung ,  Chien-Chung Huang ,  Yu-Tsung Lai

IPC分类号： H01L33/16 ,  H01L21/443

CPC分类号： H01L21/31695 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76835 ,  Y10T428/24992

摘要： A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure is also described, including the above porous low-k layer, and a conductive layer filling up a damascene opening in the porous low-k layer.

摘要翻译： 描述了多孔低k层的结构，其包括具有相同原子组成的底部和主体部分，其中主体部分位于底部，并且底部部分的密度高于 身体部位。 还描述了包括上述多孔低k层的互连结构以及填充多孔低k层中的镶嵌开口的导电层。

公开(公告)号：US20120220134A1

公开(公告)日：2012-08-30

申请号：US13468042

申请日：2012-05-10

申请人： Yen-Chu Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Keng-Jen Liu

发明人： Yen-Chu Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Keng-Jen Liu

IPC分类号： H01L21/461 ,  B08B5/00

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/02063

摘要： A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

摘要翻译： 描述了清除天然氧化物的方法。 提供了一种衬底，包括其中形成有自然氧化物层的暴露部分。 使用三氟化氮（NF 3）和氨（NH 3）作为反应气体对基板进行清除处理，其中NF 3的体积流量大于NH 3的体积流量。

公开(公告)号：US20110266596A1

公开(公告)日：2011-11-03

申请号：US12769649

申请日：2010-04-29

申请人： Yi-Wei Chen ,  Nien-Ting Ho ,  Kuo-Chih Lai ,  Chien-Chung Huang

发明人： Yi-Wei Chen ,  Nien-Ting Ho ,  Kuo-Chih Lai ,  Chien-Chung Huang

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/665 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/28518 ,  H01L21/823443 ,  H01L21/823835 ,  H01L29/6659 ,  H01L29/7833

摘要： In a method of the present invention during a salicide process, before a second thermal process, a dopant is implanted at a place located in a region ranging from a NixSi layer at meddle height down to a front thereof, or before formation of the NixSi layer, located in a region ranging from a silicon layer at a depth ranging from a half of a predetermined thickness of a NiSi layer down to a depth where is a predetermined front of the NiSi layer. The dopant is allowed to be heated with the NixSi layer together during the second thermal process to form a Si/NiSi2/NiSi interface which may reduce SBH and improve series resistance to obtain a semiconductor device having an excellent performance.

摘要翻译： 在本发明的方法中，在自对准硅化物工艺中，在第二热处理之前，将掺杂剂注入位于从中间高度的NixSi层到其前面的区域中，或者在形成NixSi层之前 位于从NiSi层的预定厚度的一半的深度到位于NiSi层的预定前方的深度的硅层的范围内。 在第二热处理期间允许掺杂剂与NixSi层一起加热以形成Si / NiSi 2 / NiSi界面，其可以降低SBH并提高串联电阻以获得具有优异性能的半导体器件。