公开(公告)号：US07479207B2

公开(公告)日：2009-01-20

申请号：US11377074

申请日：2006-03-15

申请人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

发明人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

IPC分类号： C23F1/02

CPC分类号： H01J37/32935

摘要： A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.

摘要翻译： 提供了一种用于等离子体处理室的等离子体探针组件。 提供了在半导体探针元件的第一端具有探针表面的半导体探针元件。 电连接器电连接到半导体探针元件。 电绝缘套管围绕探头元件的至少一部分。 调整装置连接到半导体探针，使得探针表面与等离子体处理室的内部腔室表面共面。

公开(公告)号：US20080066861A1

公开(公告)日：2008-03-20

申请号：US11948926

申请日：2007-11-30

申请人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

发明人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

IPC分类号： C23F1/00 ,  C23C16/448

CPC分类号： H01J37/32431 ,  H01J37/32935 ,  H05H1/0081 ,  Y10T29/49002

摘要： A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. Tile probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk stricture is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

摘要翻译： 公开了一种被配置为测量等离子体处理室中的一组电特性的探针装置，所述等离子体处理室包括被配置为暴露于等离子体的一组等离子体室表面。 平铺探针装置包括构造成暴露于等离子体的收集盘结构，由此收集盘狭窄与所述一组等离子体腔表面中的至少一个共面。 探针装置还包括导电路径，该导电路径被配置为将该组特征从收集盘结构发送到一组换能器，其中该组电特性由等离子体的离子通量产生。 探针装置还包括绝缘屏障，其被配置为基本上将采集盘和导电路径与该组等离子体腔表面电分离。

公开(公告)号：US20080038925A1

公开(公告)日：2008-02-14

申请号：US11169993

申请日：2005-06-28

申请人： Eric Hudson ,  Alexei Marakhtanov

发明人： Eric Hudson ,  Alexei Marakhtanov

IPC分类号： H01L21/461 ,  C23F1/00

CPC分类号： H01J37/32009 ,  H01J37/321

摘要： In a plasma processing system having a plasma processing chamber, at least one powered electrode and an ignition electrode, a method for igniting a plasma is disclosed. The method includes introducing a substrate into the plasma processing chamber. The method also includes flowing a gas mixture into the plasma processing chamber; energizing the ignition electrode at a strike frequency; and striking a plasma from the gas mixture with the ignition electrode. The method further includes energizing the at least one powered electrode with a target frequency, wherein the strike frequency is greater than the target frequency; and de-energizing the ignition electrode while processing the substrate in the plasma processing chamber.

摘要翻译： 在具有等离子体处理室，至少一个供电电极和点火电极的等离子体处理系统中，公开了一种用于点燃等离子体的方法。 该方法包括将衬底引入等离子体处理室。 该方法还包括使气体混合物流入等离子体处理室; 以点火频率激励点火电极; 并用点火电极从气体混合物中冲击等离子体。 该方法还包括以目标频率激励至少一个动力电极，其中击发频率大于目标频率; 并且在处理等离子体处理室中的衬底时使点火电极断电。

公开(公告)号：US20080020574A1

公开(公告)日：2008-01-24

申请号：US11487999

申请日：2006-07-18

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

IPC分类号： C23F1/00 ,  H01L21/302 ,  C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J2237/03

摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

摘要翻译： 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

公开(公告)号：US20070284690A1

公开(公告)日：2007-12-13

申请号：US11843131

申请日：2007-08-22

申请人： S.M. Reza Sadjadi ,  Eric Hudson

发明人： S.M. Reza Sadjadi ,  Eric Hudson

IPC分类号： H01L29/00

CPC分类号： G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31144

摘要： A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the sidewalls of the photoresist features by performing for a plurality of cycles. Each cycle comprises depositing a layer on the photoresist layer wherein the deposited layer has a thickness between a monolayer to 20 nm. Features are etched into the layer through the photoresist features. The photoresist layer and sidewall layer are stripped.

摘要翻译： 提供了一种在具有减少的线边缘粗糙度的层中形成特征的方法。 在该层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 通过执行多个循环，在光致抗蚀剂特征的侧壁上形成厚度小于100nm的侧壁层。 每个循环包括在光致抗蚀剂层上沉积一层，其中沉积层具有单层至20nm之间的厚度。 通过光致抗蚀剂特征将特征蚀刻到该层中。 剥离光致抗蚀剂层和侧壁层。

公开(公告)号：US20070284246A1

公开(公告)日：2007-12-13

申请号：US11447946

申请日：2006-06-07

申请人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

发明人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

IPC分类号： C23C14/00

CPC分类号： C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.

摘要翻译： 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。 如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

公开(公告)号：US20070235660A1

公开(公告)日：2007-10-11

申请号：US11393753

申请日：2006-03-31

申请人： Eric Hudson

发明人： Eric Hudson

IPC分类号： H01J27/24

CPC分类号： H01J37/32082 ,  H01J37/32321 ,  H01J37/32339

摘要： A method of tuning the uniformity of a plasma with a large sheath potential by locally affecting the density of a plasma is provided. The method comprises illuminating a body exposed to the plasma with electromagnetic radiation from a source, wherein the body and the source are cooperatively configured such that the body will generate photoelectrons upon exposure to the radiation from the source. An example of such electromagnetic radiation is vacuum ultraviolet light, and an example of such a body is the edge ring surrounding a semiconductor substrate. Photoelectrons emitted from the edge ring, captured by the plasma, and accelerated into the plasma with sufficient energy to cause ionization, locally increase plasma density. The source of radiation can be a plurality of discrete sources or one or more extended sources. The source can be arranged to provide substantively uniform illumination, or can illuminate according to a non-uniform intensity distribution to compensate for existing non-uniformities in the plasma density or in the plasma process. Such sources can be embedded in the inner or outer electrode part of a multi-piece showerhead electrode assembly, or elsewhere in the chamber.

摘要翻译： 提供了通过局部影响等离子体的密度来调整具有大鞘电位的等离子体的均匀性的方法。 该方法包括用来自源的电磁辐射来照射暴露于等离子体的物体，其中主体和源被协同地配置，使得当暴露于来自源的辐射时，主体将产生光电子。 这种电磁辐射的一个例子是真空紫外线，这样的一个实例是包围半导体衬底的边缘环。 从边缘环发射的光电子由等离子体捕获并以足够的能量加速到等离子体中以引起电离，局部地增加等离子体密度。 辐射源可以是多个离散源或一个或多个扩展源。 源可以被布置为提供实质上均匀的照明，或者可以根据不均匀的强度分布照亮以补偿等离子体密度或等离子体处理中现有的不均匀性。 这样的源可以嵌入在多件式喷头电极组件的内部或外部电极部分中，或者室内的其他地方。

公开(公告)号：US20070215285A1

公开(公告)日：2007-09-20

申请号：US11377074

申请日：2006-03-15

申请人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

发明人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

IPC分类号： C23F1/00

CPC分类号： H01J37/32935

摘要： A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.

摘要翻译： 提供了一种用于等离子体处理室的等离子体探针组件。 提供了在半导体探针元件的第一端具有探针表面的半导体探针元件。 电连接器电连接到半导体探针元件。 电绝缘套管围绕探头元件的至少一部分。 调整装置连接到半导体探针，使得探针表面与等离子体处理室的内部腔室表面共面。

公开(公告)号：US20070000843A1

公开(公告)日：2007-01-04

申请号：US11172014

申请日：2005-06-29

申请人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

发明人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

IPC分类号： C02F1/00

CPC分类号： H01J37/32431 ,  H01J37/32935 ,  H05H1/0081 ,  Y10T29/49002

摘要： A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

摘要翻译： 公开了一种被配置为测量等离子体处理室中的一组电特性的探针装置，所述等离子体处理室包括被配置为暴露于等离子体的一组等离子体室表面。 探针装置包括构造成暴露于等离子体的收集盘结构，由此收集盘结构与等离子体腔表面中的至少一个共面。 探针装置还包括导电路径，该导电路径被配置为将该组特征从收集盘结构发送到一组换能器，其中该组电特性由等离子体的离子通量产生。 探针装置还包括绝缘屏障，其被配置为基本上将采集盘和导电路径与该组等离子体腔表面电分离。

公开(公告)号：US20060118518A1

公开(公告)日：2006-06-08

申请号：US10737022

申请日：2003-12-15

申请人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

发明人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

IPC分类号： B44C1/22 ,  H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67063 ,  H01L21/67069

摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.