公开(公告)号：US20180120706A1

公开(公告)日：2018-05-03

申请号：US15851703

申请日：2017-12-21

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA ,  Keiyu OU ,  Naoya HATAKEYAMA ,  Akiyoshi GOTO ,  Keita KATO ,  Takashi YAKUSHIJI ,  Tadashi OMATSU

IPC: G03F7/36 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/20 ,  B32B27/18 ,  C08F212/04 ,  C08F220/06

CPC classification number: G03F7/36 ,  B32B27/18 ,  C08F12/24 ,  C08F212/04 ,  C08F212/14 ,  C08F220/06 ,  C09D125/18 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/0758 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/20 ,  G03F7/325 ,  C08F212/32

Abstract: Provided are a pattern forming method including (1) a step of forming a resist underlayer film on a substrate to be processed, (2) a step of forming a resist film on the resist underlayer film, using a resist composition containing (A) a resin having a repeating unit containing a Si atom, and (B) a compound which generates an acid upon irradiation with actinic rays or radiation, (3) a step of exposing the resist film, (4) a step of developing the exposed resist film using a developer including an organic solvent, thereby forming a negative tone resist pattern, and (5) a step of processing the resist underlayer film and the substrate to be processed, using the resist pattern as a mask, thereby forming a pattern, in which the content of the resin (A) is 20% by mass or more with respect to the total solid content of the resist composition.

公开(公告)号：US20180011406A1

公开(公告)日：2018-01-11

申请号：US15708963

申请日：2017-09-19

Applicant: FUJIFILM Corporation

Inventor： Naoya HATAKEYAMA ,  Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08F220/18 ,  G03F7/20 ,  G03F7/16 ,  C08F220/28 ,  G03F7/004 ,  C09D133/14 ,  C09D133/10 ,  C09D133/06 ,  G03F7/32 ,  G03F7/038

CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/185 ,  C08F2220/1858 ,  C08F2220/1891 ,  C08F2220/283 ,  C09D133/066 ,  C09D133/10 ,  C09D133/14 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/027

Abstract: A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.

公开(公告)号：US20170371244A1

公开(公告)日：2017-12-28

申请号：US15700518

申请日：2017-09-11

Applicant: FUJIFILM Corporation

Inventor： Naoya HATAKEYAMA ,  Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08L101/00 ,  C08L33/16 ,  C08L33/10 ,  C08K5/32 ,  G03F7/32 ,  C08F20/36

Abstract: A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

公开(公告)号：US20170199460A1

公开(公告)日：2017-07-13

申请号：US15470042

申请日：2017-03-27

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Kei YAMAMOTO ,  Naoki INOUE ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08F220/28 ,  G03F7/004 ,  G03F7/09 ,  G03F7/16 ,  G03F7/039 ,  G03F7/38 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027 ,  G03F7/038 ,  C08F220/18 ,  G03F7/20

CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0276 ,  C08F2220/185 ,  C08F2220/1891 ,  C08F2220/1841 ,  C08F220/42 ,  C08F220/20

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a compound having a molecular weight of 870 or less, which generates an acid upon irradiation with active light or radiation.

公开(公告)号：US20170184974A1

公开(公告)日：2017-06-29

申请号：US15460380

申请日：2017-03-16

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Akiyoshi GOTO

IPC: G03F7/32 ,  C08F220/18 ,  C08F220/28 ,  G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/004 ,  G03F7/09

CPC classification number: G03F7/327 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

公开(公告)号：US20170168394A1

公开(公告)日：2017-06-15

申请号：US15444471

申请日：2017-02-28

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Masafumi KOJIMA ,  Keita KATO ,  Keiyu OU ,  Michihiro SHIRAKAWA

IPC: G03F7/038 ,  G03F7/16 ,  G03F7/38 ,  C08F220/36 ,  G03F7/40 ,  G03F7/20 ,  C08F220/28 ,  C08F220/18 ,  G03F7/004 ,  G03F7/32

CPC classification number: G03F7/038 ,  C08F220/18 ,  C08F220/24 ,  C08F220/26 ,  C08F220/28 ,  C08F220/36 ,  C08F228/06 ,  C08F230/08 ,  C08F2220/282 ,  C08F2220/283 ,  C08F2220/365 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274 ,  C08F2220/1858 ,  C08F2220/1866 ,  C08F2220/185 ,  C08F2220/1825 ,  C08F2220/1875 ,  C08F2230/085 ,  C08F220/22

Abstract: The present invention has an object to provide an active-light-sensitive or radiation-sensitive resin composition having high DOF and low LWR; a pattern forming method using the composition; and a method for manufacturing an electronic device. The active-light-sensitive or radiation-sensitive resin composition of the present invention includes a resin P and a compound that generates an acid upon irradiation with active light or radiation, in which the resin P has a repeating unit p1 and a repeating unit p2 represented by specific formulae, and the repeating unit p2 does not have a group in which a hydroxy group of a hydroxyadamantyl group is protected with a group that decomposes by the action of an acid to leave.

公开(公告)号：US20170146908A1

公开(公告)日：2017-05-25

申请号：US15427455

申请日：2017-02-08

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/11 ,  G03F7/039 ,  G03F7/038 ,  G03F7/40 ,  G03F7/004 ,  G03F7/38 ,  G03F7/30 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/11 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/094 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/30 ,  G03F7/322 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

Abstract: Provided is a pattern forming method including (A) a step of forming a planarization layer on a stepped substrate by using a composition (a) for forming the planarization layer, the composition (a) containing a solvent, (B) a step of forming a resist film on the planarization layer by using a resist composition, (C) a step of subjecting the resist film to exposure, and (D) a step of forming a first pattern by developing the resist film having undergone exposure, in which the planarization layer having undergone the step (D) is dissolved in the solvent. By the pattern forming method, there are provided a pattern forming method, which makes it possible to form a high-resolution resist pattern on a ultrafine stepped substrate (for example, a stepped substrate having groove portions having a groove width of equal to or less than 40 nm and cylindrical depressions having a diameter of equal to or less than 40 nm) and to make the resist pattern exhibit excellent peeling properties in a resist pattern peeling step, a method for manufacturing an electronic device using the pattern forming method, and an electronic device.

公开(公告)号：US20170115568A1

公开(公告)日：2017-04-27

申请号：US15399953

申请日：2017-01-06

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Masafumi KOJIMA ,  Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/039 ,  G03F7/16 ,  G03F7/40 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/004 ,  G03F7/09

CPC classification number: G03F7/0397 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/26 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274

Abstract: Provided are an active-light-sensitive or radiation-sensitive resin composition having high depth of focus and excellent resolving power; a pattern forming method using the composition; and a method for manufacturing an electronic device. The composition is an active-light-sensitive or radiation-sensitive resin composition containing a resin (P), in which the resin (P) includes a repeating unit (a) having an acid-decomposable group and a repeating unit (b) having a lactone structure and the like; the repeating unit (a) includes at least a specific repeating unit (a1) represented by General Formula (1); the content of the repeating units (a1) with respect to all the repeating units of the resin (P) is 35% by mole or more; and the resin (P) does not include any of a specific group represented by General Formula (X1), a specific structure represented by General Formula (X2), a hydroxyadamantyl group, and a hydroxyadamantyl group in which a hydroxy group is protected with a group that decomposes by the action of an acid to leave.

公开(公告)号：US20160349613A1

公开(公告)日：2016-12-01

申请号：US15231918

申请日：2016-08-09

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Masafumi KOJIMA ,  Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/038 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/038 ,  C08F220/18 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2053 ,  G03F7/325

Abstract: The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) including a repeating unit (i) having a group represented by the following General Formula (1), and a compound which generates an acid by irradiation with actinic ray or radiation, represented by a specific formula, a pattern forming method using the composition, a method for manufacturing an electronic device, and an electronic device.

公开(公告)号：US20160342083A1

公开(公告)日：2016-11-24

申请号：US15229247

申请日：2016-08-05

Applicant: FUJIFILM Corporation

Inventor： Ryosuke UEBA ,  Naoya IGUCHI ,  Tsukasa YAMANAKA ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/00 ,  H01L21/027 ,  G03F7/40 ,  H01L21/311 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/2053 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/31144

Abstract: A pattern formation method includes step (i) of forming a first negative type pattern on a substrate by performing step (i-1) of forming a first film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition, step (i-2) of exposing the first film and step (i-3) of developing the exposed first film in this order; step (iii) of forming a second film at least on the first negative type pattern using an actinic ray-sensitive or radiation-sensitive resin composition (2); step (v) of exposing the second film; and step (vi) of developing the exposed second film and forming a second negative type pattern at least on the first negative type pattern.

Abstract translation: 图案形成方法包括通过使用光化射线敏感性或辐射敏感性树脂组合物在基板上形成第一膜的步骤（i-1）来在基板上形成第一负型图案的步骤（i），步骤 i-2），使第一膜和第（i-3）步曝光; 使用光化射线敏感或辐射敏感性树脂组合物（2）至少在第一负型图案上形成第二膜的步骤（iii）。 步骤（v）使第二膜曝光; 以及步骤（vi），使至少在第一负型图案上显影出曝光的第二膜并形成第二负型图案。