公开(公告)号：US20050020037A1

公开(公告)日：2005-01-27

申请号：US10835072

申请日：2004-04-30

申请人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

发明人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

IPC分类号： H01L21/205 ,  C23C16/02 ,  C23C16/24 ,  C30B1/02 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78636 ,  C23C16/0272 ,  C23C16/24 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L21/3221 ,  H01L29/66757 ,  H01L29/78621

摘要： A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.

摘要翻译： 通过使用有助于半导体膜的结晶化的金属元素形成具有晶体结构的半导体膜，并且有效地去除留在膜中的金属元素以降低元件之间的分散。 通过使用甲硅烷，稀有气体元素和氢作为起始气体，通过等离子体CVD法作为形成吸杂位置的工序，得到半导体膜，或通常为非晶质的硅膜， 高浓度的稀有气体元素，或具体地，浓度为1×10 20 / cm 3至1×10 21 / cm 3，并且含有浓度为1×10 15 / cm 3的氟 > 1×10 17 / cm 3。

公开(公告)号：US06809012B2

公开(公告)日：2004-10-26

申请号：US10034498

申请日：2002-01-03

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

IPC分类号： H01L2947

CPC分类号： H01L21/268 ,  H01L21/3226 ,  H01L21/67103 ,  H01L21/67115 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78633 ,  H01L2029/7863

摘要： The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annealing. Also, a reflector is provided under a substrate on which a semiconductor film is formed. When laser light transmitted through the semiconductor film substrate is irradiated from the front side of the substrate, the laser beam is reflected by the reflector and thus the laser light can be irradiated to the semiconductor film from the read side thereof. Laser light can be also irradiated to low concentration impurity regions overlapped with a portion the gate electrode. Thus, an effective energy density in the semiconductor film is increased to thereby effect recovery of crystallinity and activation of the impurity element.

摘要翻译： 本发明的特征在于，在半导体膜中形成添加有惰性气体元素的杂质区域的吸气，通过激光退火将包含在半导体膜中的金属元素分离成杂质区域。 另外，在形成有半导体膜的基板的下方设置有反射体。 当透过半导体薄膜基板的激光从基板的正面照射时，激光束被反射体反射，因此激光可以从其读出侧照射到半导体薄膜上。 激光也可以照射到与栅电极的一部分重叠的低浓度杂质区域。 因此，半导体膜中的有效能量密度增加，从而实现结晶性的恢复和杂质元素的活化。

公开(公告)号：US06808968B2

公开(公告)日：2004-10-26

申请号：US10074050

申请日：2002-02-14

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78678

摘要： It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.

摘要翻译： 旨在实现在高温（至少600℃）下进行的热处理和使用较低温度工艺（600℃或更低）的热处理数量的减少，并且实现步骤简化和生产量提高。 在本发明中，在第一半导体膜（104）上形成有阻挡层（105），第二半导体膜（106）和含有赋予一种导电类型的杂质元素（磷）的第三半导体层（108） 具有晶体结构。 进行吸收，其中包含在第一半导体膜（104）中的金属元素被允许通过热处理通过阻挡层（105）和第二半导体膜（106）以移动到第三半导体膜（107） ）。 之后，第二和第三半导体膜（106）和（107）被用作蚀刻停止层的阻挡层（105）去除。

公开(公告)号：US06743700B2

公开(公告)日：2004-06-01

申请号：US10155986

申请日：2002-05-29

申请人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

发明人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

IPC分类号： H01L21322

CPC分类号： H01L29/78636 ,  C23C16/0272 ,  C23C16/24 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L21/3221 ,  H01L29/66757 ,  H01L29/78621

摘要： A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.

摘要翻译： 通过使用有助于半导体膜的结晶化的金属元素形成具有晶体结构的半导体膜，并且有效地去除留在膜中的金属元素以降低元件之间的分散。 通过使用甲硅烷，稀有气体元素和氢作为起始气体，通过等离子体CVD法作为形成吸杂位置的工序，得到半导体膜，或通常为非晶质的硅膜， 高浓度的稀有气体元素，或具体地，浓度为1×10 20 / cm 3至1×10 21 / cm 3，并且含有浓度为1×10 15 / cm 3的氟 > 1×10 17 / cm 3。

公开(公告)号：US06709906B2

公开(公告)日：2004-03-23

申请号：US09739268

申请日：2000-12-19

申请人： Naoaki Yamaguchi ,  Hongyong Zhang ,  Satoshi Teramoto ,  Hideto Ohnuma

发明人： Naoaki Yamaguchi ,  Hongyong Zhang ,  Satoshi Teramoto ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L27/127 ,  H01L21/3003 ,  H01L27/1214 ,  H01L29/66757 ,  Y10S438/91

摘要： In producing a semiconductor device such as a thin film transistor (TFT), a silicon semiconductor film is formed on a substrate having an insulating surface, such as a glass substrate, and then a silicon nitride film is formed on the silicon semiconductor film. After that, a hydrogen ion, fluorine ion, or chlorine ion is introduced into the silicon semiconductor film through the silicon nitride film, and then the silicon semiconductor film into which an ion is introduced is heated in an atmosphere containing hydrogen, fluorine, chlorine or these mixture, to neutralize dangling bonds in the silicon semiconductor film and reduce levels in the silicon semiconductor film.

摘要翻译： 在制造诸如薄膜晶体管（TFT）的半导体器件中，在具有绝缘表面的衬底（例如玻璃衬底）上形成硅半导体膜，然后在硅半导体膜上形成氮化硅膜。 之后，通过氮化硅膜将氢离子，氟离子或氯离子引入硅半导体膜，然后在其中引入离子的硅半导体膜在含有氢，氟，氯或 这些混合物，以中和硅半导体膜中的悬挂键并降低硅半导体膜中的水平。

公开(公告)号：US06576924B1

公开(公告)日：2003-06-10

申请号：US09498646

申请日：2000-02-07

申请人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

发明人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

IPC分类号： H01L2900

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

摘要翻译： 一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。 栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同 重视对抗热门运营商和TFT的对策，重点针对当前的对策。 这使得可以实现高性能的半导体器件。 此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

公开(公告)号：US06479333B1

公开(公告)日：2002-11-12

申请号：US09532166

申请日：2000-03-21

申请人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

发明人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

IPC分类号： H01L2184

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

摘要： A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

摘要翻译： 通过扩散金属元素进行晶体生长301，并且将镍元素移动到已掺杂磷的区域108和109中。 此时与镍元素的移动方向302,303一致的轴线与与晶体生长方向一致的轴线一致，制造具有作为沟道形成区域的区域的TFT。 在镍移动的区域的路径中，由于在移动方向上获得高结晶度，所以可以通过这种方式获得具有高特性的TFT。

公开(公告)号：US06465288B1

公开(公告)日：2002-10-15

申请号：US09123000

申请日：1998-07-28

申请人： Hideto Ohnuma

发明人： Hideto Ohnuma

IPC分类号： H01L21336

CPC分类号： H01L21/02672 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78678

摘要： After a catalyst element is introduced into an amorphous silicon film, the amorphous silicon film is converted into a crystalline silicon film by a heat treatment and laser irradiation. After a resist mask is formed on the crystalline silicon film, boron and phosphorus are selectively introduced into the crystalline silicon film to form a gettering region therein. Then, a heat treatment is performed at 500°-650° C., whereby the catalyst element in a gettering subject region is gettered to the gettering region. As a result, a crystalline semiconductor film is obtained in which the catalyst element concentration is reduced. The crystalline semiconductor film is patterned into a semiconductor layer of a semiconductor device.

摘要翻译： 将催化剂元素引入非晶硅膜之后，通过热处理和激光照射将非晶硅膜转变成晶体硅膜。 在结晶硅膜上形成抗蚀剂掩模之后，硼和磷被选择性地引入到结晶硅膜中以在其中形成吸杂区域。 然后，在500℃-650℃进行热处理，由此吸气对象区域中的催化剂元素被吸收到吸气区域。 结果，得到其中催化剂元素浓度降低的结晶半导体膜。 将结晶半导体膜图案化为半导体器件的半导体层。

公开(公告)号：US06391694B1

公开(公告)日：2002-05-21

申请号：US09257049

申请日：1999-02-25

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： H01L21/2652 ,  H01L21/28061 ,  H01L27/1214 ,  H01L29/66757

摘要： In a source/drain doping step in manufacturing a field effect transistor, particularly a thin-film transistor (TFT), high-speed boron ions are implanted in a state that an active layer in which to form the source and drain is covered with an insulating film, whereas phosphorus ions are implanted in a state that the surface of the active layer is exposed.

摘要翻译： 在制造场效应晶体管，特别是薄膜晶体管（TFT）的源极/漏极掺杂步骤中，以形成源极和漏极的有源层被覆盖的状态注入高速硼离子 绝缘膜，而在有源层的表面露出的状态下注入磷离子。

公开(公告)号：US06383852B2

公开(公告)日：2002-05-07

申请号：US09805254

申请日：2001-03-14

申请人： Hongyong Zhang ,  Hideto Ohnuma

发明人： Hongyong Zhang ,  Hideto Ohnuma

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  G02F1/13454 ,  H01L29/78621

摘要： There is provided a method for eliminating influence of nickel element from a crystal silicon film obtained by utilizing nickel. A mask made of a silicon oxide film is formed on an amorphous silicon film. Then, the nickel element is held selectively on the surface of the amorphous silicon film by utilizing the mask. Next, a heat treatment is implemented to grow crystal. This crystal growth occurs with the diffusion of the nickel element. Next, phosphorus is doped to a region by using the mask. Then, another heat treatment is implemented to remove the nickel element from the pattern under the mask through the course reverse to the previous course in diffusing the nickel element in growing crystal. Then, the silicon film is patterned by utilizing the mask again to form a pattern. Thus, the pattern of the active layer which has high crystallinity and from which the influence of the nickel element is removed may be obtained without increasing masks in particular (i.e. without complicating the process).

摘要翻译： 提供一种消除由利用镍获得的晶体硅膜对镍元素的影响的方法。 在非晶硅膜上形成由氧化硅膜构成的掩模。 然后，利用掩模将镍元素选择性地保持在非晶硅膜的表面上。 接下来，进行热处理以生长晶体。 随着镍元素的扩散而发生晶体生长。 接下来，通过使用掩模将磷掺杂到区域。 然后，进行另一种热处理，以将镍元素从掩模下面的图案中去除，与之前的过程相反，使镍元素在生长晶体中扩散。 然后，通过再次利用掩模对硅膜进行图案化以形成图案。 因此，在不增加掩模（即不使工艺复杂化）的情况下，可以获得具有高结晶度和从其去除镍元素的影响的有源层的图案。