公开(公告)号：US20110114948A1

公开(公告)日：2011-05-19

申请号：US13012844

申请日：2011-01-25

申请人： Shunpei Yamazaki ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hideto Ohnuma

IPC分类号： H01L29/12 ,  H01L29/06

CPC分类号： H01L27/1266 ,  H01L21/3081 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has a projecting portion, and a bonding layer is formed to cover the projecting portion. In addition, before the bonding layer is formed, a portion of the semiconductor substrate to be the projecting portion is irradiated with accelerated ions to form a brittle layer. After the bonding layer and the supporting substrate are bonded together, heat treatment for separation of the semiconductor substrate is performed to provide a semiconductor layer over the supporting substrate. The semiconductor layer is selectively etched, and a semiconductor element is formed and a semiconductor device is manufactured.

摘要翻译： 本发明的目的是提供一种制造具有晶体半导体层的半导体器件的高产率的方法，即使是具有低的上限极限的衬底。 在半导体衬底的一部分中形成沟槽以形成具有突出部分的半导体衬底，并且形成接合层以覆盖突出部分。 此外，在形成接合层之前，用加速离子照射作为突出部分的半导体衬底的一部分以形成脆性层。 在接合层和支撑基板接合在一起之后，进行用于分离半导体衬底的热处理，以在支撑衬底上提供半导体层。 选择性地蚀刻半导体层，形成半导体元件并制造半导体器件。

公开(公告)号：US20110033988A1

公开(公告)日：2011-02-10

申请号：US12904235

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

IPC分类号： H01L21/336

CPC分类号： H01L27/127 ,  G02F1/13454 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78696

摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.

摘要翻译： 具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。 在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。 在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。

公开(公告)号：US07745829B2

公开(公告)日：2010-06-29

申请号：US12230954

申请日：2008-09-09

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

IPC分类号： H01L27/14

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US07601601B2

公开(公告)日：2009-10-13

申请号：US12078214

申请日：2008-03-28

申请人： Shunpei Yamazaki ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hideto Ohnuma

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L27/1266 ,  H01L21/3081 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has a projecting portion, and a bonding layer is formed to cover the projecting portion. In addition, before the bonding layer is formed, a portion of the semiconductor substrate to be the projecting portion is irradiated with accelerated ions to form a brittle layer. After the bonding layer and the supporting substrate are bonded together, heat treatment for separation of the semiconductor substrate is performed to provide a semiconductor layer over the supporting substrate. The semiconductor layer is selectively etched, and a semiconductor element is formed and a semiconductor device is manufactured.

摘要翻译： 本发明的目的是提供一种制造具有晶体半导体层的半导体器件的高产率的方法，即使是具有低的上限极限的衬底。 在半导体衬底的一部分中形成沟槽以形成具有突出部分的半导体衬底，并且形成接合层以覆盖突出部分。 此外，在形成接合层之前，用加速离子照射作为突出部分的半导体衬底的一部分以形成脆性层。 在接合层和支撑基板接合在一起之后，进行用于分离半导体衬底的热处理，以在支撑衬底上提供半导体层。 选择性地蚀刻半导体层，形成半导体元件并制造半导体器件。

公开(公告)号：US07588970B2

公开(公告)日：2009-09-15

申请号：US11421922

申请日：2006-06-02

申请人： Hideto Ohnuma ,  Shigeharu Monoe ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Shigeharu Monoe ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1214 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78624

摘要： The present invention provides a TFT including at least one LDD region in a self-alignment manner without forming a sidewall spacer and increasing the number of manufacturing steps. A photomask or a reticle provided with an assist pattern that is formed of a diffraction grating pattern or a semi-transmitting film and has a function of reducing light intensity is employed in a photolithography step of forming a gate electrode, an asymmetrical resist pattern having a region with a thick thickness and a region with a thickness thinner than that of the above region on one side is formed, a gate electrode having a stepped portion is formed, and an LDD region is formed in a self-alignment manner by injecting an impurity element to the semiconductor layer through the region with a thin thickness of the gate electrode.

摘要翻译： 本发明提供一种TFT，其以自对准方式提供至少一个LDD区域，而不形成侧壁间隔物并增加制造步骤的数量。 在形成栅电极的光刻步骤中使用具有由衍射光栅图案或半透射膜形成的辅助图案并具有降低光强度的功能的光掩模或掩模版，具有 形成厚度厚的区域和具有比一面上述区域的厚度薄的区域，形成具有台阶部分的栅电极，并且通过注入杂质以自对准方式形成LDD区域 元件通过具有薄的栅电极厚度的区域到半导体层。

公开(公告)号：US07459354B2

公开(公告)日：2008-12-02

申请号：US10896906

申请日：2004-07-23

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Toru Mitsuki

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Toru Mitsuki

IPC分类号： H01L33/00

CPC分类号： H01L21/02672 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78621

摘要： The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore, it is a problem to provide a method for forming a ridge-reduced semiconductor film and a semiconductor device using such a semiconductor film. The present invention is characterized by heating a semiconductor film due to a heat processing method (RTA method: Rapid Thermal Anneal method) to irradiate light emitted from a lamp light source after crystallizing the semiconductor film by laser light, thereby reducing the ridge.

摘要翻译： 通过激光照射的结晶方法在所得到的结晶半导体膜的表面形成多个凸部（脊），劣化了膜质量。 因此，提供一种使用这种半导体膜形成脊形半导体膜的方法和半导体器件是一个问题。 本发明的特征在于，通过热处理方法（RTA法：快速热退火法）加热半导体膜，以在通过激光使半导体膜结晶之后照射从灯光源发射的光，从而减小脊。

公开(公告)号：US07288789B2

公开(公告)日：2007-10-30

申请号：US10446187

申请日：2003-05-28

申请人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

发明人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

IPC分类号： H01L31/0376 ,  H01L31/20 ,  H01L31/036

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

摘要翻译： 一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。 栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同 重视对抗热门运营商和TFT的对策，重点针对当前的对策。 这使得可以实现高性能的半导体器件。 此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

公开(公告)号：US07205182B2

公开(公告)日：2007-04-17

申请号：US10968093

申请日：2004-10-20

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  H01L21/3226 ,  H01L21/67103 ,  H01L21/67115 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78633 ,  H01L2029/7863

摘要： The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annealing. Also, a reflector is provided under a substrate on which a semiconductor film is formed. When laser light transmitted through the semiconductor film substrate is irradiated from the front side of the substrate, the laser beam is reflected by the reflector and thus the laser light can be irradiated to the semiconductor film from the read side thereof. Laser light can be also irradiated to low concentration impurity regions overlapped with a portion the gate electrode. Thus, an effective energy density in the semiconductor film is increased to thereby effect recovery of crystallinity and activation of the impurity element.

摘要翻译： 本发明的特征在于，在半导体膜中形成添加有惰性气体元素的杂质区域的吸气，通过激光退火将包含在半导体膜中的金属元素分离成杂质区域。 另外，在形成有半导体膜的基板的下方设置有反射体。 当透过半导体薄膜基板的激光从基板的正面照射时，激光束被反射体反射，因此激光可以从其读出侧照射到半导体薄膜上。 激光也可以照射到与栅电极的一部分重叠的低浓度杂质区域。 因此，半导体膜中的有效能量密度增加，从而实现结晶性的恢复和杂质元素的活化。

公开(公告)号：US20060261336A1

公开(公告)日：2006-11-23

申请号：US11383694

申请日：2006-05-16

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

公开(公告)号：US20050258443A1

公开(公告)日：2005-11-24

申请号：US11121070

申请日：2005-05-04

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Aya Anzai ,  Masayuki Sakakura ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Aya Anzai ,  Masayuki Sakakura ,  Hiromichi Godo

IPC分类号： H01L27/15 ,  H01L27/32 ,  H01L33/00 ,  H05B33/12

CPC分类号： H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5262

摘要： An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.

摘要翻译： 本发明的一个目的是提供一种发光装置，其中发光光谱的变化取决于用于观察发射光的表面的角度。 本发明的发光器件包括形成在衬底上的第一绝缘层，形成在第一绝缘层上的第二绝缘层，以及形成在第二绝缘层上的半导体层。 形成栅极绝缘层以覆盖第二绝缘层和半导体层。 在栅绝缘层上形成栅电极。 形成第一层间绝缘层以覆盖栅极绝缘层和栅电极。 通过第一层间绝缘层，栅极绝缘层和第二绝缘层形成开口。 形成第二层间绝缘层以覆盖第一绝缘层和开口。 在开口上形成发光元件。