公开(公告)号：US20190129227A1

公开(公告)日：2019-05-02

申请号：US16153861

申请日：2018-10-08

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Isao SUZUMURA ,  Hajime WATAKABE

IPC: G02F1/1333 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1362 ,  H01L27/12 ,  G09F9/30 ,  H05K1/18

Abstract: The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.

公开(公告)号：US20180122835A1

公开(公告)日：2018-05-03

申请号：US15723300

申请日：2017-10-03

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Isao SUZUMURA ,  Hirokazu WATANABE ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L21/311 ,  H01L21/473 ,  H01L21/4757

CPC classification number: G02F1/1368 ,  G02F2001/13685 ,  H01L21/473 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/532 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

公开(公告)号：US20170162715A1

公开(公告)日：2017-06-08

申请号：US15371897

申请日：2016-12-07

Applicant: Japan Display Inc.

Inventor： Takashi OKADA ,  Masayoshi FUCHI ,  Hajime WATAKABE ,  Akihiro HANADA

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

Abstract: According to one embodiment, a method of manufacturing a thin film transistor, includes forming an island-like first insulating layer containing oxygen above an insulating substrate, forming an oxide semiconductor layer above the insulating substrate and the first insulating layer and in contact with the first insulating layer, and performing heat treatment to supply oxygen from the first insulating layer to an overlapping area of the oxide semiconductor layer, which is overlaid on the first insulating layer.

公开(公告)号：US20160149046A1

公开(公告)日：2016-05-26

申请号：US14944676

申请日：2015-11-18

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Masayoshi Fuchi ,  Hajime Watakabe ,  Takashi Okada ,  Arichika Ishiba

IPC: H01L29/786 ,  H01L21/467 ,  H01L29/66 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/467 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a thin-film transistor and a method of manufacturing the thin-film transistor provided herein achieve enhanced reliability by preventing a disconnection in a gate insulating film at a position corresponding to an end surface of an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. The channel region is placed between the source region and the drain region. The gate insulating film covers the oxide semiconductor layer in a range from at least a part of an upper surface to an end surface continuous with the upper surface of the oxide semiconductor layer. The oxide semiconductor layer is formed so as to have an oxygen concentration that becomes lower from a top side to a bottom side and the end surface is inclined so as to diverge from the top side to the bottom side.

Abstract translation: 根据一个实施例，本文提供的薄膜晶体管和制造薄膜晶体管的方法通过防止栅极绝缘膜在与氧化物半导体层的端面相对应的位置处的断开而实现增强的可靠性。 氧化物半导体层包括沟道区，源极区和漏极区。 沟道区域放置在源极区域和漏极区域之间。 栅极绝缘膜在从上表面至与氧化物半导体层的上表面连续的端面的至少一部分的范围内覆盖氧化物半导体层。 氧化物半导体层形成为具有从上侧到底侧变低的氧浓度，并且端面倾斜以从顶侧向底侧发散。

公开(公告)号：US20250113619A1

公开(公告)日：2025-04-03

申请号：US18890900

申请日：2024-09-20

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Hajime WATAKABE

IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/786

Abstract: A semiconductor device includes a first gate electrode, an oxide semiconductor layer including a first oxide semiconductor having a polycrystalline structure over the first gate electrode, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, and a second gate electrode overlapping the first gate electrode and the oxide semiconductor layer over the source electrode and the drain electrode. The second gate electrode includes a second oxide semiconductor having a polycrystalline structure. The second gate electrode is electrically connected to the first gate electrode.

公开(公告)号：US20250113542A1

公开(公告)日：2025-04-03

申请号：US18887091

申请日：2024-09-17

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Kentaro MIURA ,  Akihiro HANADA ,  Takaya TAMARU ,  Masahiro WATABE

IPC: H01L29/786

Abstract: A semiconductor device comprises a first insulating layer; an oxide semiconductor layer having a polycrystalline structure on the first insulating layer; a gate insulating layer on the semiconductor oxide layer; a buffer layer on the gate insulating layer; a gate wiring on the buffer layer; and a second insulating layer on the gate wiring. The oxide semiconductor layer has a first region, a second region and a third region aligned toward a first direction. An electrical resistivity of the second region is higher than an electrical resistivity of the first region and lower than an electrical resistivity of the third region. A sheet resistance of the third region is less than 1000 ohm/square.

公开(公告)号：US20240128273A1

公开(公告)日：2024-04-18

申请号：US18393873

申请日：2023-12-22

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1285 ,  H01L29/66742 ,  H01L29/7869

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20240069400A1

公开(公告)日：2024-02-29

申请号：US18503351

申请日：2023-11-07

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

CPC classification number: G02F1/1368 ,  G02F1/136209 ,  G02F1/136277 ,  G02F1/136286 ,  H01L29/78633 ,  H01L29/78672 ,  H10K50/865 ,  H10K59/131

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20230395724A1

公开(公告)日：2023-12-07

申请号：US18318748

申请日：2023-05-17

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA

IPC: H01L29/786 ,  H01L29/423 ,  G02F1/1368

CPC classification number: H01L29/78633 ,  H01L29/78696 ,  H01L29/7869 ,  H01L29/42384 ,  G02F1/1368

Abstract: A transistor includes a gate line, a first gate insulating film, a semiconductor film, a pair of terminals, a second gate insulating film, and a second gate electrode. A part of the gate line functions as a first gate electrode. The first gate insulating film is located over the first gate electrode. The semiconductor film is located over the first gate insulating film and overlaps the first gate electrode. The terminals are located over and electrically connected to the at least one semiconductor film. The second gate insulating film is located over the terminals. The second gate electrode has a light-transmitting property, is located over the second gate insulating film, overlaps the first gate electrode and the at least one semiconductor film, and is electrically connected to the first gate electrode through a first pair of openings formed in the first gate insulating film and the second gate insulating film.

公开(公告)号：US20230387146A1

公开(公告)日：2023-11-30

申请号：US18366859

申请日：2023-08-08

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Isao SUZUMURA ,  Akihiro HANADA ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1292 ,  H01L29/24 ,  H01L29/78666 ,  H01L29/7869 ,  H01L29/66969 ,  H01L27/1225 ,  H01L29/66757

Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.