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64 条记录 (耗时 0.033 秒)

    Method for forming gate oxide layer in semiconductor device
    61.
    发明申请
    Method for forming gate oxide layer in semiconductor device 有权
    在半导体器件中形成栅氧化层的方法

    公开(公告)号：US20050142770A1

    公开(公告)日：2005-06-30

    申请号：US11024466

    申请日：2004-12-30

    申请人： Yong Choi

    发明人： Yong Choi

    IPC分类号： H01L21/336 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/8234

    CPC分类号： H01L21/823462 ,  H01L21/31662

    摘要： A method for forming gate oxide layers of a semiconductor device including defining a first, a second, and a third device region by forming device isolation regions on a semiconductor substrate. The method also includes forming a sacrificing dielectric layer on the substrate, removing the sacrificing dielectric layer on the first device region by selective etching, and forming a first gate oxide layer by oxidizing the first device region. The method further includes removing the sacrificing dielectric layer on the second and third device regions, forming a second gate oxide layer on the second and third device region by oxidizing the substrate, forming a photoresist pattern exposing the third device region and covering the first and second device regions, and forming a third gate oxide layer by oxidizing the third device region.

    摘要翻译： 一种用于形成半导体器件的栅极氧化物层的方法，包括通过在半导体衬底上形成器件隔离区来限定第一器件区域，第二器件区域和第三器件区域。 该方法还包括在衬底上形成牺牲介质层，通过选择性蚀刻去除第一器件区域上的牺牲介质层，并通过氧化第一器件区域形成第一栅氧化层。 该方法还包括去除第二和第三器件区上的牺牲介质层，通过氧化基片在第二和第三器件区上形成第二栅极氧化层，形成暴露第三器件区域并覆盖第一和第二器件区的光刻胶图案 并且通过氧化第三器件区域形成第三栅极氧化物层。

    Split gate memory device and fabricating method thereof
    62.
    发明申请
    Split gate memory device and fabricating method thereof 失效
    分闸存储器件及其制造方法

    公开(公告)号：US20050142754A1

    公开(公告)日：2005-06-30

    申请号：US11064830

    申请日：2005-02-25

    申请人： Og-Hyun Lee ,  Yong Choi

    发明人： Og-Hyun Lee ,  Yong Choi

    IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/336

    CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42324

    摘要： A split gate memory device and fabricating method thereof, wherein gate insulating and polysilicon layers are sequentially formed on a substrate. The polysilicon layer is patterned and a capping insulating layer is formed on portions thereof. A pair of self-aligned control gates having identical bottom widths are formed with a tunnel insulating layer interposed between the control gates and sidewalls of the polysilicon layer pattern and capping insulating layer. The tunnel insulating layer, patterned polysilicon layer and gate insulating layer are selectively etched to expose a portion of the substrate thereby forming a pair of floating gates. Ions are implanted into the exposed substrate and portions of the substrate adjoining the control gates to form a common source region and a drain region, respectively. The capping insulating layer on the floating gate protects an acute section of the tunnel insulating layer from attack during the etching and ion implantation.

    摘要翻译： 一种分离栅极存储器件及其制造方法，其中栅极绝缘和多晶硅层顺序地形成在衬底上。 图案化多晶硅层，并且在其部分上形成封盖绝缘层。 形成具有相同底部宽度的一对自对准控制栅极，其中，隧道绝缘层插入在多晶硅层图案和封盖绝缘层的控制栅极和侧壁之间。 选择性地蚀刻隧道绝缘层，图案化多晶硅层和栅极绝缘层以暴露衬底的一部分，从而形成一对浮动栅极。 将离子注入暴露的衬底和邻接控制栅极的衬底的部分，以分别形成公共源极区域和漏极区域。 浮动栅极上的封盖绝缘层可保护隧道绝缘层的尖锐部分免受蚀刻和离子注入期间的侵袭。

    Coating method for the preparation of coated nuclear fuels with carbides borides or nitrides by using high temperature and high pressure combustion synthesis
    64.
    发明授权
    Coating method for the preparation of coated nuclear fuels with carbides borides or nitrides by using high temperature and high pressure combustion synthesis 失效
    通过使用高温高压燃烧合成制备涂覆核燃料的碳化物硼化物或氮化物的涂覆方法

    公开(公告)号：US06190725B1

    公开(公告)日：2001-02-20

    申请号：US09140691

    申请日：1998-08-26

    申请人： Young Woo Lee ,  Bong Goo Kim ,  Jung Won Lee ,  Sang Ho Na ,  Dong Sung Sohn ,  Yong Choi

    发明人： Young Woo Lee ,  Bong Goo Kim ,  Jung Won Lee ,  Sang Ho Na ,  Dong Sung Sohn ,  Yong Choi

    IPC分类号： G21C306

    CPC分类号： C23C16/44 ,  C23C16/325 ,  G21C3/20 ,  G21C3/623 ,  G21C3/626 ,  G21Y2002/304 ,  G21Y2002/50 ,  G21Y2004/40 ,  Y02E30/33 ,  Y02E30/38

    摘要： The present invention relates to a coating method for the preparation of a coated nuclear fuel. Particularly, the present invention relates to the coating method of nuclear fuel surface with more than two coated layers of carbides, borides or nitrides and their compounds comprising deposition or permeation steps of i) elements or mixture that can form carbides, borides or nitrides and ii) a layer of pyrolytic carbon or boron prepared by chemical vapor deposition(CVD) or sputtering in sequence or in reverse sequence, or nitrogen prepared by gas permeation in sequence, on the nuclear fuel surface. The coated layers are formed with carbides, borides, nitrides or their mixture at high temperature and pressure by a combustion synthesis. The coating method of this invention can be applied to various types of nuclear fuels either in particle or in pellet type and control and preserve fine crystal structure without phase transition since the surface of nuclear fuel coated with pyrolytic carbon and silicon is heated only for several seconds by heat source such as laser beam, arc or microwave. Thus, the present invention is excellent method of coating nuclear fuel surface not only for particle type fuel which used in High Temperature Gas-cooled Reactor (HTGR) but also for pellet type fuel used for Water-cooled Reactors.

    摘要翻译： 本发明涉及一种涂覆核燃料的制备方法。 特别地，本发明涉及具有多于两个碳化物，硼化物或氮化物涂层的核燃料表面的涂覆方法及其化合物，其包括沉积或渗透步骤，i）可形成碳化物，硼化物或氮化物的元素或混合物，以及ii ）通过化学气相沉积（CVD）或溅射按顺序或反向顺序制备的热解碳或硼的层，或通过气相渗透制备的氮在核燃料表面上。 涂覆层通过燃烧合成在高温和高压下由碳化物，硼化物，氮化物或它们的混合物形成。 本发明的涂布方法可以应用于颗粒或颗粒型的各种类型的核燃料，并且控制和保存没有相变的精细晶体结构，因为涂覆有热解碳和硅的核燃料的表面仅被加热几秒钟 通过激光束，电弧或微波等热源。 因此，本发明不仅用于高温气冷堆（HTGR）中使用的颗粒型燃料，而且用于水冷反应堆的颗粒型燃料，也是涂覆核燃料表面的优良方法。