摘要:
It is an object to provide a semiconductor memory device that can conduct the equalizing operation of bit lines with a low current consumption while maintaining a normal accessing speed and the chip area, and a control method thereof. In a semiconductor memory device of the shared sense amplification system, in a predetermined number of times which is (k−1) times or less among k-times of continuous word line selections of a selected memory block, the bit line separation gate of the unselected memory block is rendered conductive in the active period of the equalizing unit after the word line selection. Also, a circuit that equalizes a wiring higher in the capacity component is driven by a higher voltage level according to the wiring capacity component of the sense amplification power supply line and the bit lines, to thereby equalize the power supply line and the bit line in the equal time, thereby being capable of preventing the short-circuiting within the sense amplifier.
摘要:
There is disclosed a liquid crystal display apparatus including a main body and a swivel mechanism, where the main body is capable of smoothly swiveling. A countersunk hole is formed in a bottom plate member as follows: When a through-hole for inserting a screw is formed in a metal sheet to be a bottom plate member, there is also concurrently formed an accommodating hole for accommodating flow of the material forming the metal sheet upon plastic forming or pressing which is performed subsequently for forming a countersink, and then the countersink is formed at an open end of the through-hole by pressing. It is preferable that a plurality of the accommodating holes are formed around the through-hole.
摘要:
A volatile memory has a volatile additional area for storing an error correction code for a nonvolatile memory. Data stored in the nonvolatile memory are transferred to the volatile memory together with the error correction code without making an error correction. Thus, data transfer time from the nonvolatile memory to the volatile memory can be shortened. As a result, it is possible to shorten the time from beginning of the data transfer from the nonvolatile memory to the volatile memory to a point at which data becomes accessible.
摘要:
The present invention provides a semiconductor memory device which reduces current consumption in a standby state owing to a suitable refresh-thinning-out function, and a refresh control method thereof. When the refresh-thinning-out function is added while a refresh operation and an external access operation are being executed independently of each other, a refresh address counter outputs a refresh address Add(C) and inputs predetermined high-order bits thereof to a refresh-thinning-out control as a high-order refresh address Add(C) (m), where judgment as to whether the refresh operation is performed, is made. A refresh permission signal RFEN corresponding to the result of judgment is inputted to a word driver to activate and control the word driver. The process of judgment by the refresh-thinning-out control circuit can be embedded in an access time of a row system.
摘要:
The present invention relates to a semiconductor device having an MCP (Multi Chip Package) structure in which a plurality of semiconductor chips are mounted in the same package, a manufacturing method therefor and a semiconductor substrate used therein. Atop a first semiconductor chip that is a memory chip is mounted a second semiconductor chip that is a logic chip, with a first functional chip and a second functional chip that together form the first semiconductor chip being joined together via an unsliced scribe line. Additionally, a first functional chip and a second functional chip are given the same chip composition (32-bit memory) and respectively rotated 180 degrees relative to each other. These configurations are intended to improve performance, reduce costs and improve yield.
摘要:
A method of testing an electronic device including first and second semiconductor devices connected to each other with a plurality of bus lines. First, the first semiconductor device supplies a selected one of the bus lines with a first logical output signal. Then, the second semiconductor device acquires a first bus line signal from the selected bus line. The second semiconductor device inverts the first bus line signal to generate a second logical output signal. The second semiconductor device transmits the second logical output signal to the first semiconductor device. The first semiconductor device receives a second bus line signal from the selected bus line. The first semiconductor device compares the first logical output signal and the second bus line signal to detect a connection between the first semiconductor device and the second semiconductor device.
摘要:
A liquid crystal display apparatus including a tilt mechanism, which is capable of preventing an inadvertent insertion of a finger of a user in a groove of a bracket of the tilt mechanism even while a cover for concealing the bracket is removed, wherein provided is a washer-like member or inadvertent-insertion preventer which has a through-hole or perforated portion through which a pawl formed in a mainbody bracket or one of two brackets is inserted, and is attached to the pawl at a position to contact a stand bracket or the other of the two brackets, by inserting the pawl through the through-hole. The washer-like member is preferably made of a plastic and sandwiched between the two brackets.
摘要:
It is intended to provide a semiconductor integrated circuit device permitting reading of information specific to chips within the mounted chips while restraining the increase in the total number of terminals of the package and enabling the area of circuits required for reading information specific to chips to be made smaller than that according to the prior art, and a control method therefor. The same terminal is used as the external terminal to which the pulse signals are inputted and the external terminal from which the chip-specific information is outputted. Also, the external terminal for inputting/outputting required power supply in the normal operation mode and the external terminal for reading chip-specific information in the information reading mode are used in common. The increase in the number of external terminals can be thereby restrained. Moreover, the counter unit is shared between functional circuits and the comparative decision unit. This can serve to restrain the increase in chip area.
摘要:
There is provided an inventive semiconductor memory device and control method thereof capable of preventing shift operation to deactivated state and data access due to transition of address signals from occurring concurrently without accompanying delay of access time, thereby to prevent data-holding characteristic of memory cell from deteriorating. A column selecting circuit 16 is deactivated based on an input signal EXBn outputted to a glitch canceller 20 prior to precharge signal PRE so as to prevent selection of a column selecting signal CLn and deactivation of a word line WL from occurring concurrently. This manner substitutes for taking delay time &tgr;D that is to be added to signals CAGn from which glitch noises due to transition of address CAn are eliminated. Thereby, address-access time, namely, from transition of address CAn till selection of a column selecting signal CLn, is kept in the shortest access time tAAX0 and the column selecting circuit 16 can be deactivated prior to deactivation of the word line WL.
摘要:
The present invention relates to an apparatus and method for reducing the frequency with which memory is accessed in graphic printing or the like. If a CPU 100 reads image data from a buffer block where data has not been written, a memory controller 12 does not read the image data from a image buffer 140, but sends back initializing data stored beforehand. If image data is going to be written for the first time in a buffer block, the memory controller 12 stores and manages this image data, first writes the initializing data in this buffer block, and thereafter writes the image data. If a read request or a write request occurs to a buffer block where data has already been written, the memory controller 12 reads or writes data as requested.