公开(公告)号：US06388295B1

公开(公告)日：2002-05-14

申请号：US09663717

申请日：2000-09-18

申请人： Tomohiro Yamashita ,  Yoshinori Okumura ,  Atsushi Hachisuka ,  Shinya Soeda

发明人： Tomohiro Yamashita ,  Yoshinori Okumura ,  Atsushi Hachisuka ,  Shinya Soeda

IPC分类号： H01L2976

CPC分类号： H01L21/823493 ,  H01L21/761 ,  H01L27/10897

摘要： The semiconductor device has a triple well structure. The triple well and other wells have impurity concentration distributions in the depth direction, which are determined in accordance with required function. Thereby, the required performances such as suppression of a leak current can be achieved even in a miniaturized structure.

摘要翻译： 半导体器件具有三重阱结构。 三井等井在深度方向具有杂质浓度分布，根据所需的功能确定。 因此，即使在小型化结构中也能够实现抑制漏电流等所需的性能。

公开(公告)号：US06207046B1

公开(公告)日：2001-03-27

申请号：US09341558

申请日：1999-07-12

申请人： Tomohiro Yamashita ,  Kenji Nishikawa ,  Shinichi Kunisaki

发明人： Tomohiro Yamashita ,  Kenji Nishikawa ,  Shinichi Kunisaki

IPC分类号： B01D1712

CPC分类号： B67D1/07 ,  B67D3/0009 ,  B67D3/0022 ,  B67D2210/00013

摘要： A drinking water dispenser according to the present invention functions to supply drinking water from a detachable water container. The drinking water dispenser includes a hot water tank, a chilled water tank, a supply pipe and a sterilization system. The hot water tank heats and stores the drinking water supplied from the water container. The supply pipe connects the water container with the hot water tank and the chilled water tank. The sterilization system sterilizes the tanks and the supply pipe by circulating hot water from the hot water tank among them. The dispenser is also sterilized because of its including a special 3 way connector between the detachable container and tanks which allows connector and container to be housed in a refrigerator, thus separating critical system components from warmer outside air and thus suppressing invasion and growth of microbes.

摘要翻译： 根据本发明的饮用水分配器用于从可拆卸水容器供应饮用水。 饮水机包括热水箱，冷冻水箱，供水管和灭菌系统。 热水箱加热并储存从水箱供应的饮用水。 供水管将水箱与冷水箱和冷水箱连接。 灭菌系统通过循环热水箱中的热水来对容器和供水管进行灭菌。 分配器也被灭菌，因为它在可拆卸的容器和容器之间包括一个特殊的3路连接器，这允许连接器和容器被容纳在冰箱中，从而将关键系统部件与更暖的外部空气隔离，从而抑制微生物的侵入和生长。

公开(公告)号：US5978294A

公开(公告)日：1999-11-02

申请号：US112506

申请日：1998-07-09

申请人： Shuichi Ueno ,  Tomohiro Yamashita ,  Hidekazu Oda ,  Shigeki Komori

发明人： Shuichi Ueno ,  Tomohiro Yamashita ,  Hidekazu Oda ,  Shigeki Komori

IPC分类号： G01R31/28 ,  G11C7/14 ,  G11C11/401 ,  G11C11/406 ,  G11C29/12 ,  G11C29/24 ,  H01L21/66 ,  H01L21/8242 ,  H01L27/108 ,  G11C7/02 ,  G11C11/24

CPC分类号： G11C7/14 ,  G11C11/406 ,  G11C29/24

摘要： A dummy cell part includes a capacitor having a first end which is connected to one of a plurality of pads and a P-N junction element having a first end which is connected to one of the plurality of pads and a second end which is connected to one of the plurality of pads . A sense part is connected to a second end of the capacitor , for sensing a potential on the second end of the capacitor and outputting the result of sensing to one of the plurality of pads . Thus, a memory cell evaluation semiconductor device which can evaluate a single memory cell, a method of fabricating the same and a memory cell evaluation method are obtained.

摘要翻译： 虚设单元部分31包括具有连接到多个焊盘<2>中的一个的第一端的电容器<311>和具有连接到多个焊盘中的一个的第一端的PN结元件<312> 的焊盘<2>和连接到多个焊盘<2>之一的第二端。 感测部分<32>连接到电容器<311>的第二端，用于感测电容器<311>的第二端上的电位，并将感测结果输出到多个焊盘<2>之一。 因此，可以获得能够评估单个存储单元的存储单元评估半导体器件，其制造方法和存储单元评估方法。

公开(公告)号：US5652234A

公开(公告)日：1997-07-29

申请号：US513803

申请日：1995-10-06

申请人： Rajeshwar Singh ,  Tomohiro Yamashita ,  Charles Fiakpui ,  George Thomas ,  Chan Ha ,  Hiroshi Matsumoto ,  Toshio Otani ,  Shinji Oie ,  Ronald Micetich

发明人： Rajeshwar Singh ,  Tomohiro Yamashita ,  Charles Fiakpui ,  George Thomas ,  Chan Ha ,  Hiroshi Matsumoto ,  Toshio Otani ,  Shinji Oie ,  Ronald Micetich

IPC分类号： C07D503/00 ,  A61K31/42 ,  A61P35/02 ,  A61K31/395

CPC分类号： A61K31/42

摘要： The present invention relates to the use of 3-(7-oxo-1-aza-4-oxabicyclo[3.2.0]hept-3-yl)alanine derivatives of formula (I) or a pharmaceutically acceptable salt thereof, as antitumor agents. ##STR1## Wherein R is: hydrogen or COOR.sub.2 wherein R.sub.2 is C.sub.1 -C.sub.3 alkyl group which may be substituted with aryl group.Wherein R.sub.1 is:hydrogen or C.sub.1 -C.sub.3 alkyl group which may be substituted with one or two aryl groups.

摘要翻译： PCT No.PCT / GB95 / 00023 Sec。 371日期1995年10月6日 102（e）日期1995年10月6日PCT 1995年1月6日PCT PCT。 公开号WO95 / 18611 PCT 日期：1995年7月13日本发明涉及式（I）的3-（7-氧代-1-氮杂-4-氧杂双环[3.2.0]庚-3-基）丙氨酸衍生物或其药学上可接受的盐 作为抗肿瘤剂。 （I）其中R为：氢或COOR 2，其中R 2为可被芳基取代的C 1 -C 3烷基。 其中R1是：可被一个或两个芳基取代的氢或C1-C3烷基。

公开(公告)号：US09287259B2

公开(公告)日：2016-03-15

申请号：US14111549

申请日：2012-04-09

申请人： Hirofumi Shinohara ,  Yukio Nishida ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Hidekazu Oda

发明人： Hirofumi Shinohara ,  Yukio Nishida ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Hidekazu Oda

IPC分类号： H01L27/088 ,  H01L29/66 ,  H01L21/8238

CPC分类号： H01L27/088 ,  H01L21/823842 ,  H01L21/823878 ,  H01L29/66477

摘要： MISFETs after the 32 nm technology node have a High-k gate insulating film and a metal gate electrode. Such MISFETs have the problem that the absolute value of the threshold voltage of n-MISFET and p-MISFET inevitably increases by the subsequent high temperature heat treatment. The threshold voltage is therefore controlled by forming various threshold voltage adjusting metal films on a High-k gate insulating film and introducing a film component from them into the High-k gate insulating film. The present inventors have however revealed that lanthanum or the like introduced into the High-k gate insulating film of the n-MISFET is likely to transfer to the STI region by the subsequent heat treatment.The semiconductor integrated circuit device according to the present invention is provided with an N channel threshold voltage adjusting element outward diffusion preventing region in the surface portion of the element isolation region below and at the periphery of the gate stack of the n-MISFET.

摘要翻译： 32nm技术节点之后的MISFET具有高k栅极绝缘膜和金属栅电极。 这样的MISFET的问题是，随后的高温热处理，n-MISFET和p-MISFET的阈值电压的绝对值不可避免地增加。 因此，通过在High-k栅极绝缘膜上形成各种阈值电压调节金属膜并将膜分量从它们引入高k栅极绝缘膜来控制阈值电压。 然而，本发明人揭示了引入到n-MISFET的高k栅极绝缘膜中的镧等可能通过随后的热处理转移到STI区域。 根据本发明的半导体集成电路器件在n-MISFET的栅极堆叠的下方和周围的元件隔离区域的表面部分中设置有N沟道阈值电压调节元件向外扩散防止区域。

公开(公告)号：US08998397B2

公开(公告)日：2015-04-07

申请号：US13530504

申请日：2012-06-22

申请人： Yasuhito Mori ,  Tomohiro Yamashita

发明人： Yasuhito Mori ,  Tomohiro Yamashita

IPC分类号： B41J2/01 ,  C09D11/38 ,  B41J2/21 ,  C09D11/322

CPC分类号： C09D11/38 ,  B41J2/2107 ,  C09D11/322

摘要： The invention provides an ink that inhibits lowering of ejection stability caused by a precipitate derived from a self-dispersible type monoazo pigment and also inhibits deterioration of a liquid contact surface of a heater portion of a recording head. The ink is an ink for ink jet recording system employing an thermal energy, containing a monoazo pigment, a resin and a surfactant represented by the following formula (1). A proportion of a molecular weight of an ethylene oxide group moiety occupying the surfactant is 10% or more and 85% or less, the monoazo pigment is a self-dispersible pigment to the particle surface of which at least one hydrophilic group selected from the group consisting of —COOM, —SO3M, —PO3HM and —PO3M2 is bonded directly or through another atomic group, and the acid value of the resin is 240 mg KOH/g or less.

摘要翻译： 本发明提供了抑制由自分散型单偶氮颜料衍生的沉淀物引起的喷射稳定性的降低的油墨，并且还抑制了记录头的加热器部分的液体接触表面的劣化。 油墨是使用含有单偶氮颜料，树脂和由下式（1）表示的表面活性剂的热能的喷墨记录系统的油墨。 占该表面活性剂的环氧乙烷基部分的分子量的一个比例为10％以上且85％以下，单偶氮颜料是粒子表面的自分散颜料，其中至少一个亲水基团选自基团 由-COOM，-SO3M，-PO3HM和-PO3M2构成的物质直接或通过另一原子团键合，树脂的酸值为240mgKOH / g以下。

公开(公告)号：US08740370B2

公开(公告)日：2014-06-03

申请号：US12874964

申请日：2010-09-02

申请人： Yukako Tamanuki ,  Shin-ichi Hakamada ,  Tomohiro Yamashita ,  Yasuhito Mori

发明人： Yukako Tamanuki ,  Shin-ichi Hakamada ,  Tomohiro Yamashita ,  Yasuhito Mori

IPC分类号： C09D11/00

CPC分类号： C09D11/40 ,  C09D11/30

摘要： A liquid composition used in combination with an ink containing a coloring material is ejected by the action of thermal energy from a recording head including a heating resistor having a protecting layer that is to come into contact with the liquid composition and that contains at least one of a metal and a metal oxide. The liquid composition contains at least either an organic compound having a carboxy group and an amino group or an amine oxide compound, an organic acid having a carboxy group, and water.

摘要翻译： 与含有着色材料的油墨组合使用的液体组合物通过来自包括具有与液体组合物接触的保护层的加热电阻器的记录头的热能的作用喷射，并且包含至少一种 金属和金属氧化物。 液体组合物至少含有具有羧基和氨基的有机化合物或氧化胺化合物，具有羧基的有机酸和水。

公开(公告)号：US20120268532A1

公开(公告)日：2012-10-25

申请号：US13442279

申请日：2012-04-09

申请人： Yasuhito Mori ,  Shinichi Hakamada ,  Tomohiro Yamashita

发明人： Yasuhito Mori ,  Shinichi Hakamada ,  Tomohiro Yamashita

IPC分类号： C09D11/10 ,  B41J2/175 ,  B41J2/05

CPC分类号： C09D11/322 ,  C09D11/326

摘要： Provided is an ink jet ink including a monoazo pigment and a resin, the ink being used for an ink jet recording system in which the ink is ejected from a recording head by an action of thermal energy. The monoazo pigment is a self-dispersible pigment having an anionic group bonded to a particle surface of the pigment directly or via another atomic group and has a surface charge amount of 5.9×10−2 mmol/g or more and 9.8×10−2 mmol/g or less. The resin has an acid value of 100 mg KOH/g or more and 160 mg KOH/g or less. The mass ratio of the content (mass %) of the resin to the content (mass %) of the monoazo pigment in the ink is 0.05 times or more and 0.25 times or less.

摘要翻译： 提供了一种包括单偶氮颜料和树脂的喷墨油墨，该油墨用于喷墨记录系统，其中通过热能从记录头喷射油墨。 单偶氮颜料是具有阴离子基团的自分散颜料，其直接或通过另一个原子基团与颜料的颗粒表面键合，并且表面带电量为5.9×10 -2 mmol / g以上至9.8×10 -2 mmol / g以下。 该树脂的酸值为100mg KOH / g以上且160mgKOH / g以下。 树脂的含量（质量％）与油墨中单偶氮颜料的含量（质量％）的质量比为0.05倍以上且0.25倍以下。

公开(公告)号：US08283272B2

公开(公告)日：2012-10-09

申请号：US12913370

申请日：2010-10-27

申请人： Shinsuke Hashimoto ,  Masato Konno ,  Momoyo Nitta ,  Tomohiro Yamashita ,  Hiroshi Sasaki

发明人： Shinsuke Hashimoto ,  Masato Konno ,  Momoyo Nitta ,  Tomohiro Yamashita ,  Hiroshi Sasaki

IPC分类号： C04B35/468

CPC分类号： C04B35/4682 ,  C04B35/6261 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3436 ,  C04B2235/3454 ,  C04B2235/442 ,  C04B2235/448 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/6562 ,  C04B2235/6584 ,  C04B2235/663 ,  C04B2235/72 ,  C04B2235/726 ,  C04B2235/761 ,  H01B3/12 ,  H01G4/1227 ,  H01G4/30

摘要： A purpose of the present invention is to provide a dielectric ceramic composition which is available to obtain a multilayer ceramic capacitor having a high specific permittivity and a small temperature change of capacitance. A dielectric ceramic composition comprises a dielectric main component composed of 86.32 to 97.64 mol % of BaTiO3, 0.01 to 10.00 mol % of Y2O3 and 0.01 to 10.00 mol % of MgO and 0.001 to 0.200 mol % of V2O5, 0.01 to 1.0 mol % of more than one kind of a first additive selected from a group composed of MnO, Cr2O3, Co2O3, 0.5 to 10.0 mol % of a second additive which is {Baα, Ca (1−α)}SiO3 (note, 0≦α≦1), and Sr: 10 to 500 ppm, S: 10 to 50 ppm, Al: 10 to 50 ppm, Fe: 10 to 50 ppm, Zr: 100 to 800 ppm, Y: 10 to 100 ppm, Hf: 10 to 100 ppm to 100 parts by weight of BaTiO3.

摘要翻译： 本发明的目的是提供一种电介质陶瓷组合物，其可用于获得具有高比介电常数和较小电容温度变化的多层陶瓷电容器。 电介质陶瓷组合物包括由86.32至97.64摩尔％的BaTiO 3，0.01至10.00摩尔％的Y 2 O 3和0.01至10.00摩尔％的MgO和0.001至0.200摩尔％的V 2 O 5组成的介电主要组分，0.01至1.0摩尔％ 选自由MnO，Cr2O3，Co2O3组成的组的第一种添加剂，为{Baα，Ca（1-α）} SiO 3的第二添加剂为0.5〜10.0mol％（注意，0＆lt; nlE;α＆nlE; 1） ，Sr：10〜500ppm，S：10〜50ppm，Al：10〜50ppm，Fe：10〜50ppm，Zr：100〜800ppm，Y：10〜100ppm，Hf：10〜100ppm 至100重量份的BaTiO 3。

公开(公告)号：US20100044802A1

公开(公告)日：2010-02-25

申请号：US12495070

申请日：2009-06-30

申请人： Masato Ishibashi ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Takaaki Tsunomura ,  Takashi Kuroi

发明人： Masato Ishibashi ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Takaaki Tsunomura ,  Takashi Kuroi

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L21/763 ,  H01L21/76224 ,  H01L29/7846

摘要： Provided are a semiconductor device making it possible to form an element region having a dimension close to a designed dimension, restrain a phenomenon similar to gate-induced drain leakage, and further restrain compressive stress to be applied to the element region by oxidation of a conductive film; and a method for manufacturing the semiconductor device. Trenches are made in a main surface of a semiconductor substrate. By oxidizing the wall surface of each of the trenches, a first oxide film is formed on the wall surface. An embedded conductive film is formed to be embedded into the trench. The embedded conductive film is oxidized in an atmosphere containing an active oxidizing species, thereby forming a second oxide film. A third oxide film is formed on the second oxide film by CVD or coating method.

摘要翻译： 提供一种半导体器件，其可以形成具有接近设计尺寸的尺寸的元件区域，抑制类似于栅极引起的漏极泄漏的现象，并且进一步抑制通过导电的氧化对元件区域施加的压缩应力 电影; 以及半导体装置的制造方法。 沟槽在半导体基板的主表面上制成。 通过氧化每个沟槽的壁表面，在壁表面上形成第一氧化膜。 嵌入的导电膜被形成为嵌入到沟槽中。 嵌入的导电膜在含有活性氧化物质的气氛中被氧化，从而形成第二氧化膜。 通过CVD或涂布法在第二氧化物膜上形成第三氧化物膜。