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61.发明申请PHOTOVOLTAIC THIN-FILM CELL PRODUCED FROM METALLIC BLEND USING HIGH-TEMPERATURE PRINTING 审中-公开使用高温印刷从金属混合生产的光伏薄膜电池公开(公告)号：US20110284081A1
公开(公告)日：2011-11-24
申请号：US12564042
申请日：2009-09-21
IPC分类号： H01L31/0264 , H01L21/20
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/127 , C23C18/1295 , H01L31/0322 , H01L31/042 , H01L31/0749 , H01L31/18 , H01L31/186 , Y02E10/541 , Y02P70/521
摘要： The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.
摘要翻译： IB-IIIA-VIA光伏电池活性层的金属组分可以通过使用比较低的熔点（例如小于约500℃）的金属如铟和镓直接涂覆在基底上。 具体地，可以通过将熔融IIIA族金属与IB族和（任选的）IIIA族金属的固体纳米颗粒共混来制造CI（G）S薄膜太阳能电池。 熔融混合物可以以熔融状态涂覆在基材上，例如使用涂覆技术，例如热浸，热微凹版和/或气刀涂布。 在涂覆之后，可以将基底冷却并将膜退火，例如在含硫或含硒气氛中。
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62.发明授权Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment 有权使用原子层沉积和高通量表面处理形成CIGS吸收层材料公开(公告)号：US07858151B2
公开(公告)日：2010-12-28
申请号：US10943658
申请日：2004-09-18
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/405 , C23C16/458 , C23C16/4581 , C23C16/545 , C25D7/0614 , C25D17/02 , H01L31/022425 , H01L31/0322 , H01L31/0392 , H01L31/03926 , H01L31/1864 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIA may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
摘要翻译： 可以使用原子层沉积反应在衬底上形成吸收层。 包含IB，IIIA和VIA族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的来源原子层沉积到基底上形成，以形成 一个电影。 然后将VIA族元素并入膜中并退火以形成吸收层。 吸收层可以大于约25nm厚。 衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。 卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。 可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。
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公开(公告)号：US20100166954A1
公开(公告)日：2010-07-01
申请号：US12643565
申请日：2009-12-21
IPC分类号： B05D5/00
CPC分类号： H01L31/036 , H01L31/0203 , H01L31/04 , H01L31/048 , H01L31/0481 , Y02E10/50 , Y10T428/249953
摘要： Nanostructured layers with 10 nm to 50 nm pores spaced 10-50 nm apart, a method for making such nanostructured layers, optoelectronic devices having such nanostructured layers and uses for such nanostructured layers are disclosed. The nanostructured layer can be formed using precursor sol, which generally includes one or more covalent metal complexes, one or more surfactants, a solvent, one or more optional condensation inhibitors, and (optionally) water. Evaporating the solvent from the precursor sol forms a surfactant-templated film. Covalently crosslinking the surfactant-templated film forms a nanostructured porous layer. Pore size is controlled, e.g., by appropriate solvent concentration, choice of surfactant, use of chelating agents, use of swelling agents or combinations of these.
摘要翻译： 公开了具有间隔10-50nm的10nm至50nm孔的纳米结构层，制造这种纳米结构层的方法，具有这种纳米结构层的光电子器件以及用于这种纳米结构层的纳米结构层。 纳米结构层可以使用通常包括一种或多种共价金属络合物，一种或多种表面活性剂，溶剂，一种或多种任选的缩合抑制剂和（任选的）水的前体溶胶形成。 从前体溶胶蒸发溶剂形成表面活性剂模板的膜。 共价交联表面活性剂模板的膜形成纳米结构多孔层。 例如通过适当的溶剂浓度，选择表面活性剂，使用螯合剂，使用溶胀剂或这些的组合来控制孔径。
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公开(公告)号：US07535019B1
公开(公告)日：2009-05-19
申请号：US10369338
申请日：2003-02-18
IPC分类号： H01L31/0336 , H01L31/042
CPC分类号： H01L31/035281 , D01D5/34 , H01L31/0322 , Y02E10/541
摘要： An optoelectronic fiber and methods for forming such a fiber are disclosed. The fiber generally includes an electrically conductive fiber core, a first semiconducting layer substantially surrounding the fiber core, and a second semiconducting layer substantially surrounding the first semiconducting layer. The first and second semiconducting layers are of complementary types, i.e., one is p-type and the other is n-type. The fiber may be made, e.g., by electrospinning a material to form a fiber core; substantially surrounding the fiber with a first semiconducting material; and substantially surrounding the first semiconducting material with a second semiconducting material. Optoelectronic fibers can be fashioned into a web to provide a solar cell material or substantially transparent conductive material.
摘要翻译： 公开了一种光电纤维和用于形成这种纤维的方法。 纤维通常包括导电纤维芯，基本上围绕纤维芯的第一半导体层和基本上围绕第一半导体层的第二半导体层。 第一和第二半导体层是互补型的，即一个是p型，另一个是n型。 纤维可以例如通过静电纺丝以形成纤维芯而制成; 用第一半导体材料基本上围绕纤维; 并用第二半导体材料基本上围绕第一半导体材料。 光电纤维可以被制成网状物以提供太阳能电池材料或基本上透明的导电材料。
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公开(公告)号：US07511217B1
公开(公告)日：2009-03-31
申请号：US10419708
申请日：2003-04-19
IPC分类号： H01L31/00
CPC分类号： B82Y10/00 , H01L51/0014 , H01L51/0047 , H01L51/424 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： An optoelectronic apparatus, a method for making the apparatus, and the use of the apparatus in an optoelectronic device are disclosed. The apparatus may include an active layer having a nanostructured network layer with a network of regularly spaced structures with spaces between neighboring structures. One or more network-filling materials are disposed in the spaces. At least one of the network-filling materials has complementary charge transfer properties with respect to the nanostructured network layer. An interfacial layer, configured to enhance an efficiency of the active layer, is disposed between the nanostructured network layer and the network-filling materials. The interfacial layer may be configured to provide (a) charge transfer between the two materials that exhibits different rates for forward versus backward transport; (b) differential light absorption to extend a range of wavelengths that the active layer can absorb; or (c) enhanced light absorption, which may be coupled with charge injection.
摘要翻译： 公开了一种光电子装置，制造该装置的方法和该装置在光电装置中的应用。 该装置可以包括具有纳米结构网络层的有源层，其具有在相邻结构之间具有间隔的规则间隔结构的网络。 一个或多个网络填充材料设置在空间中。 至少一种网络填充材料相对于纳米结构化网络层具有互补电荷转移性质。 被配置为提高有源层的效率的界面层设置在纳米结构网络层和网络填充材料之间。 界面层可以被配置为提供（a）两种材料之间的电荷转移，这些材料对于正向和反向传输具有不同的速率; （b）差分光吸收以延长有源层可以吸收的波长范围; 或（c）增强的光吸收，其可与电荷注入相结合。
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66.发明申请FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT 审中-公开使用原子层沉积和高通量表面处理形成CIGS吸收层材料公开(公告)号：US20090025640A1
公开(公告)日：2009-01-29
申请号：US12110252
申请日：2008-04-25
IPC分类号： C23C16/458
CPC分类号： C23C16/45544 , C23C16/405 , C23C16/458 , C23C16/4581 , C23C16/545 , C25D7/0614 , C25D17/02 , H01L31/022425 , H01L31/0322 , H01L31/0392 , H01L31/03926 , H01L31/1864 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
摘要翻译： 可以使用原子层沉积反应在衬底上形成吸收层。 包含IB，IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成，以形成 一个电影。 然后将VIA族元素并入膜中并退火以形成吸收层。 吸收层可以大于约25nm厚。 衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。 卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。 可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。
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公开(公告)号：US20080302030A1
公开(公告)日：2008-12-11
申请号：US12116932
申请日：2008-05-07
IPC分类号： E04D13/18 , H01L31/048 , H01L31/052
CPC分类号： H01L31/02008 , F24S20/69 , H01L31/0521 , H02S20/25 , Y02A30/62 , Y02B10/12 , Y02B10/20 , Y02E10/44 , Y02E10/50
摘要： Improved photovoltaic devices, and more specifically, improved building integrated photovoltaic devices are described herein. In one embodiment, the photovoltaic roofing structure may be comprised of a roofing tile having a top surface, a bottom surface, and a recessed portion; a photovoltaic module sized to fit within the recessed portion of the roofing structure.
摘要翻译： 本文描述了改进的光伏器件，更具体地，改进的建筑集成光伏器件。 在一个实施例中，光伏屋顶结构可以由具有顶表面，底表面和凹陷部分的屋顶瓦片组成; 尺寸适合装配在屋顶结构的凹陷部分内的光伏组件。
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68.发明授权公开(公告)号：US07462774B2
公开(公告)日：2008-12-09
申请号：US10771250
申请日：2004-02-02
CPC分类号： H01L51/4233 , B82Y10/00 , H01L31/0352 , H01L31/03529 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0047 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0078 , H01L51/0094 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L51/4253 , H01L51/447 , Y02E10/549
摘要： Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture with an inorganic insulating nanostructured template having template elements between about 1 nm and about 500 nm in diameter with a elements density of between about 1012 elements/m2 and about 1016 elements/m2. A first charge-transfer material coats the walls of the template elements leaving behind additional space. A second charge-transfer material fills the additional space such that the first and second charge-transfer materials are volumetrically interdigitated. At least one charge transfer material has an absorbance of greater than about 103/cm. The first and second charge-transfer materials have complementary charge transfer properties with respect to each other. A lowest unoccupied molecular orbital (LUMO) or conduction band of the first charge-transfer material is offset from a LUMO or conduction band of the second charge-transfer material by greater than about 0.2 eV. An electrically conductive material may optionally be disposed between the nanostructured template and the first charge-transfer material.
摘要翻译： 公开了太阳能电池等光伏器件及其制造方法。 器件的特征可以在于具有无机绝缘纳米结构化模板的结构，其具有直径在约1nm至约500nm之间的模板元件，元件密度为约1012个元/ m 2至约10 16个元/ m 2。 第一电荷转移材料涂覆模板元件的壁，留下额外的空间。 第二电荷转移材料填充附加空间，使得第一和第二电荷转移材料是体积相互交错的。 至少一种电荷转移材料的吸光度大于约103 / cm。 第一和第二电荷转移材料相对于彼此具有互补的电荷转移性质。 第一电荷转移材料的最低未占分子轨道（LUMO）或导带从第二电荷转移材料的LUMO或导带偏移大于约0.2eV。 导电材料可以任选地设置在纳米结构化模板和第一电荷转移材料之间。
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公开(公告)号：US20080142084A1
公开(公告)日：2008-06-19
申请号：US11933357
申请日：2007-10-31
申请人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
发明人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
IPC分类号： H01L31/0216 , C09D11/00
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/1295 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
摘要翻译： 公开了一种用于形成CIGS光伏电池有源层的墨水以及用于制造墨水的方法，制备活性层的方法和由活性层制成的太阳能电池。 油墨含有IB，IIIA和（任选地）VIA组分的纳米颗粒的混合物。 颗粒的直径在约1nm至约500nm之间的所需粒度范围，其中大部分颗粒的质量包括尺寸不超过平均粒度的约40％或以下的颗粒，或 如果平均粒度小于约5纳米，高于或低于平均粒度的不超过约2纳米。 使用这种墨水避免了在构建光伏电池期间将材料暴露于H 2 Se气体，并且允许在膜退火期间更均匀的熔融，更均匀的纳米颗粒的混合，并且允许更高的 要形成的质量吸收膜。
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公开(公告)号：US20080142083A1
公开(公告)日：2008-06-19
申请号：US11933338
申请日：2007-10-31
申请人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
发明人： Dong Yu , Jacqueline Fidanza , Brian M. Sager
IPC分类号： H01L31/0256
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/1295 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
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