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    Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
    62.
    发明授权
    Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films 有权
    用于钛酸盐，镧系元素和钽酸盐介电膜的原子层沉积和化学气相沉积的前体组合物

    公开(公告)号：US08206784B2

    公开(公告)日：2012-06-26

    申请号：US12619165

    申请日：2009-11-16

    申请人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C22C16/00

    CPC分类号： C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

    摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

    摘要翻译： 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地 选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同 并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布 材料制造闪存等微电子器件。

    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS
    63.
    发明申请
    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 有权
    用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物

    公开(公告)号：US20120141675A1

    公开(公告)日：2012-06-07

    申请号：US13370072

    申请日：2012-02-09

    申请人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C23C16/30

    CPC分类号： C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

    摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

    摘要翻译： 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地 选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同 并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布 材料制造闪存等微电子器件。

    Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
    69.
    发明授权
    Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films 有权
    用于钛酸盐，镧系元素和钽酸盐介电膜的原子层沉积和化学气相沉积的前体组合物

    公开(公告)号：US07638074B2

    公开(公告)日：2009-12-29

    申请号：US12282511

    申请日：2007-03-12

    申请人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C07F3/00 ,  C23C16/00

    CPC分类号： C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

    摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

    摘要翻译： 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式（I）的式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同， 其中每个独立地选自氢，C 1 -C 12烷基，C 1 -C 12氨基，C 6 -C 10芳基，C 1 -C 12烷氧基，C 3 -C 6烷基甲硅烷基，C 2 -C 12烯基，R 1 R 2 R 3 N NR 3，其中R 1，R 2和R 3可以是 彼此相同或不同，并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现均匀涂布 的高介电常数材料制造闪存和其他微电子器件。