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公开(公告)号：US5814694A
公开(公告)日：1998-09-29
申请号：US833052
申请日：1997-04-03
IPC分类号： C08K5/09
CPC分类号： C08K5/09
摘要： A water-soluble coating composition for forming a layer to be placed on the upper surface of a resist is provided without use of Freons. The material includes an aqueous solution containing a) at least one water-soluble polymer selected from the group consisting of poly(N-vinylpyrrolidone) homopolymers and water-soluble copolymers of N-vinylpyrrolidone and other vinyl monomers, b) at least one fluorine-containing organic acid, and c) at least one amino acid derivative. The film formed through use of the material of the invention serves as both an anti-reflective film and a protective film. The material of the present invention provides a number of advantages in the formation of resist patterns, including excellent film-forming properties, excellent dimensional accuracy and aligning accuracy, simple and easy handling, high productivity, and good reproducibility.
摘要翻译： 在不使用氟利昂的情况下，提供用于形成被放置在抗蚀剂的上表面上的层的水溶性涂料组合物。 该材料包括含有a）至少一种选自聚（N-乙烯基吡咯烷酮）均聚物和N-乙烯基吡咯烷酮和其它乙烯基单体的水溶性共聚物的水溶性聚合物的水溶液，b）至少一种含氟 - 含有机酸，和c）至少一种氨基酸衍生物。 通过使用本发明的材料形成的膜既用作抗反射膜又用作保护膜。 本发明的材料在形成抗蚀剂图形方面提供了许多优点，包括优异的成膜性能，优异的尺寸精度和对准精度，操作简便且易于操作，生产率高，再现性好。
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公开(公告)号：US5612170A
公开(公告)日：1997-03-18
申请号：US569659
申请日：1995-12-08
申请人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
CPC分类号： G03F7/0045 , G03F7/0755 , G03F7/0757 , Y10S430/115 , Y10S430/122
摘要： A positive resist composition based on a silicone polymer contains a photo acid generator which will decompose to generate an acid upon exposure to radiation. The silicone polymer includes hydroxybenzyl units wherein some OH groups are replaced by t-butoxycarbonyl, t-butoxycarbonylmethyl, trimethylsilyl or tetrahydropyranyl groups. In a first form, the photo acid generator is a specific onium salt having at least one phenyl group with a t-alkoxy, t-butoxycarbonyloxy or t-butoxycarbonylmethoxy substituent. In a second form, the composition further contains a nitrogenous compound. In a third form, the composition further contains a dissolution inhibitor in the form of a specific silicone compound. The composition is sensitive to high energy radiation and has high sensitivity and resolution.
摘要翻译： 基于有机硅聚合物的正型抗蚀剂组合物含有光致酸产生剂，其将在暴露于辐射时分解产生酸。 有机硅聚合物包括其中一些OH基被叔丁氧基羰基，叔丁氧基羰基甲基，三甲基甲硅烷基或四氢吡喃基代替的羟基苄基单元。 在第一种形式中，光酸产生剂是具有至少一个具有叔烷氧基，叔丁氧基羰基氧基或叔丁氧基羰基甲氧基取代基的苯基的特定鎓盐。 在第二种形式中，组合物还含有含氮化合物。 在第三种形式中，组合物还含有特定硅氧烷化合物形式的溶解抑制剂。 该成分对高能辐射敏感，灵敏度高，分辨率高。
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公开(公告)号：US5529888A
公开(公告)日：1996-06-25
申请号：US531328
申请日：1995-09-20
IPC分类号： G03F7/11 , G03F7/039 , G03F7/09 , H01L21/027 , G03C5/00
CPC分类号： G03F7/091
摘要： A water-soluble composition comprising a water-soluble N-vinylpyrrolidone copolymer and a fluorinated organic acid in a weight ratio of from 20:80 to 70:30 is useful in forming a water-soluble overlying film on a chemically amplified resist layer. The overlying film functions as both an anti-reflective film and a protective film during resist pattern formation by photolithography.
摘要翻译： 包含重量比为20:80至70:30的水溶性N-乙烯基吡咯烷酮共聚物和氟化有机酸的水溶性组合物可用于在化学放大抗蚀剂层上形成水溶性覆盖膜。 在通过光刻的抗蚀剂图案形成期间，上覆膜既用作抗反射膜，又用作保护膜。
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64.发明授权
公开(公告)号：US5461166A
公开(公告)日：1995-10-24
申请号：US384594
申请日：1995-02-03
申请人： Norihisa Mino , Kazufumi Ogawa , Toshinobu Ishihara , Mikio Endo , Tohru Kubota , Kazuyuki Asakura
发明人： Norihisa Mino , Kazufumi Ogawa , Toshinobu Ishihara , Mikio Endo , Tohru Kubota , Kazuyuki Asakura
IPC分类号： C07B61/00 , B01J23/42 , B05D1/18 , C07F7/08 , C07F7/12 , C07F7/18 , C09K3/00 , G03F7/075 , C07D333/02 , C08G77/08 , C08F28/06
CPC分类号： B82Y30/00 , B05D1/185 , B82Y10/00 , B82Y40/00 , C07F7/12 , C07F7/182 , C07F7/1836 , C07F7/1868
摘要： Disclosed are a conductive thienyl derivative monomolecular film covalently bonded to a substrate surface and method of manufacturing the same, and a silicon compound comprising 3-thienyl groups (thiophene derivative) used for forming the conductive monomolecular film and a method of manufacturing the same. A monomolecular ultrathin film comprising 3-thienyl groups and silicon groups is formed in the invention. The silicon compound used for forming the film is provided by reacting .omega.-(3-thienyl)-1-alkene compound to a monosilane derivative compound, in which three out of four hydrogen atoms of monosilane are replaced with halogen or alkoxy groups, in the presence of a transition metal catalyst. A substrate is dipped and held in a nonaqueous solution of the above-noted compound, thus chemically bonding the monomolecular film to the substrate surface. Furthermore, a thienyl derivative ultrathin film is formed by the electrolytic or catalytic polymerization of the monomolecular film.
摘要翻译： 公开了共价结合到基板表面的导电噻吩基衍生物单分子膜及其制造方法，以及包含用于形成导电性单分子膜的3-噻吩基（噻吩衍生物）的硅化合物及其制造方法。 在本发明中形成包含3-噻吩基和硅基团的单分子超薄膜。 用于形成膜的硅化合物是通过使ω-（3-噻吩基）-1-烯烃化合物与甲硅烷衍生物化合物反应而得到的，其中甲硅烷中四分之三的氢原子被卤素或烷氧基取代， 过渡金属催化剂的存在。 将基材浸渍并保持在上述化合物的非水溶液中，从而将单分子膜化学键合到基材表面。 此外，通过单分子膜的电解或催化聚合形成噻吩衍生物超薄膜。
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公开(公告)号：US5377616A
公开(公告)日：1995-01-03
申请号：US150532
申请日：1993-11-09
IPC分类号： C23C16/448 , C30B25/02 , C30B25/14 , H01L21/205
CPC分类号： C30B25/02 , C23C16/4485 , C23C16/45561 , C30B25/14 , C30B29/40 , Y10S117/919 , Y10T117/1004
摘要： A method for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber which comprises the steps of heating an organometal compound to a predetermined temperature to obtain vapor of the compound at a predetermined vapor pressure and supplying, in a constant flow rate, the vapor to the surface of a substrate heated under a reduced pressure: an apparatus for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber 11 comprising a first gas flow path for the vapor of the organometal compound which connects a container 20, in which the organometal compound is charged, to a crystal growth chamber heated under a reduced pressure through a first valve 21, a first massflow controller 22 and a second valve 23 in this order; and a constant temperature oven 24 and 25 for controlling the temperature of the container 20 and the first gas flow path extending from the container 20 to the second valve 23, are herein disclosed. The method and the apparatus makes it possible to form a thin film on substrate having even a large surface area and uniform composition and thickness with good reproducibility and to provide an epitaxial thin film of a compound semiconductor having good sharpness of the crystal growing boundary; the method further makes it possible to prevent the contamination of the solid organometal compound and to provide good workability.
摘要翻译： 一种用于蒸发有机金属化合物并将其产生的蒸气供应到晶体生长室的方法，该方法包括以下步骤：将有机金属化合物加热至预定温度以获得化合物的蒸气，并以预定的蒸汽压进行，并以恒定的流量 蒸气到减压下加热的基底表面：用于蒸发有机金属化合物并将其产生的蒸气供应到晶体生长室11的装置，该结晶生长室11包括有机金属化合物蒸汽的第一气体流路， 通过第一阀21，第一质量流量控制器22和第二阀23依次向经过减压加热的晶体生长室中装入有机金属化合物的容器20; 以及用于控制容器20的温度和从容器20延伸到第二阀23的第一气体流路的恒温箱24和25。 该方法和装置使得可以在具有大的表面积和均匀的组成和厚度的基板上形成薄膜，具有良好的再现性，并且提供具有良好的晶体生长边界锐度的化合物半导体的外延薄膜; 该方法还可以防止固体有机金属化合物的污染并提供良好的可加工性。
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公开(公告)号：US5294727A
公开(公告)日：1994-03-15
申请号：US974989
申请日：1992-11-12
申请人： Tohru Kubota , Toshinobu Ishihara , Mikio Endo
发明人： Tohru Kubota , Toshinobu Ishihara , Mikio Endo
IPC分类号： B01J27/122 , B01J31/02 , C07B61/00 , C07F7/08 , C07F7/12
CPC分类号： C07F7/122 , C07F7/0801 , C07F7/0896
摘要： A method for preparing a tertiary hydrocarbon-silyl compound comprises the step of reacting a grignard reagent represented by the general formula: R.sup.1 MgX.sup.1 (wherein R.sup.1 represents a tertiary hydrocarbon group and X.sup.1 is a halogen atom) with a silicon atom-containing compound represented by the general formula: X.sup.2.sub.m R.sup.2.sub.n SiH.sub.4-m-n (wherein X.sup.2 is a halogen atom and may be identical to or different from X.sup.1 ; R.sup.2 is a monovalent hydrocarbon group; m is 1, 2 or 3; and n is 0, 1 or 2, provided that m+n is not more than 3 and that if n is 2, R.sup.2 's may be identical to or different from one another) in an aprotic inert organic solvent in the presence of a copper compound and/or a quaternary ammonium salt. According to this method, the tertiary hydrocarbon-silyl compounds can industrially efficiently and rapidly produced in high yields.
摘要翻译： 制备叔烃 - 甲硅烷基化合物的方法包括使由通式R1MgX1（其中R1表示叔烃基，X1是卤素原子）的格列尼试剂与由下式表示的含硅原子的化合物反应的步骤： 通式：X2mR2nSiH4-mn（其中X2是卤原子，可以与X1相同或不同; R2是一价烃基; m是1,2或3; n是0,1或2，条件是m + n不大于3，如果n为2，则R2可以彼此相同或不同）在非质子惰性有机溶剂中，在铜化合物和/或季铵盐存在下。 根据该方法，叔烃甲硅烷基化合物可以以高产率工业上有效且快速地产生。
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67.发明授权
公开(公告)号：US5210058A
公开(公告)日：1993-05-11
申请号：US726578
申请日：1991-07-08
IPC分类号： C04B35/584 , C04B35/589 , C08G77/48 , C08G77/62
CPC分类号： C08G77/62 , C04B35/589
摘要： An organic silazane polymer is prepared by reacting ammonia gas with a mixture of a trihalosilane and a monohalosilane, for example, methyltrichlorosilane and trimethylchlorosilane in an organic solvent to form a silazane compound, and heating the silazane compound at 200 to 350.degree. C. for polymerization. By melting, shaping, infusibilizing, and firing the silazane polymer, there is obtained a ceramic material.
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68.发明授权
公开(公告)号：US5202452A
公开(公告)日：1993-04-13
申请号：US753522
申请日：1991-09-03
申请人： Kazufumi Ogawa , Norihisa Mino , Toshinobu Ishihara , Mikio Endo , Tohru Kubota , Yasuhisa Tanaka
发明人： Kazufumi Ogawa , Norihisa Mino , Toshinobu Ishihara , Mikio Endo , Tohru Kubota , Yasuhisa Tanaka
摘要： A silane compound represented by the following general Formula (I) is described: ##STR1## wherein R.sup.1 is an alkyl group with 1 to 4 carbon atoms;A is oxygen atom (--O--), carboxyl group ##STR2## or an alkylsilylene group ##STR3## wherein each R.sup.2 and R.sup.3 is an alkyl group with 1 to 4 carbon atoms;x is a halogen atom, or an alkoxyl group;m is an integer from 1 to 8;n is an integer from 0 to 2;p is an integer from 5 to 25; andq is an integer from 0 to 2.The silane compound is useful as a coating agent for various base materials, to provide lubricity, in addition to stain-proofing property.
摘要翻译： 描述由以下通式（I）表示的硅烷化合物：其中R 1是具有1至4个碳原子的烷基; A是氧原子（-O-），羧基基团或烷基亚甲硅基基团，其中每个R 2和R 3是具有1至4个碳原子的烷基; x是卤素原子或烷氧基; m是1至8的整数; n为0〜2的整数; p是5至25的整数; q为0〜2的整数。作为各种基材的涂布剂，除了防污性以外，还可以提供润滑性。
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公开(公告)号：US5017715A
公开(公告)日：1991-05-21
申请号：US523878
申请日：1990-05-16
申请人： Katsuyuki Oikawa , Toshinobu Ishihara , Mikio Endo , Tohru Kubota
发明人： Katsuyuki Oikawa , Toshinobu Ishihara , Mikio Endo , Tohru Kubota
CPC分类号： C08K5/5406
摘要： A composition comprising iodotrimethylsilane in admixture with a polysiloxane is shelf stable for a long time and effective in various organic synthetic reactions.
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公开(公告)号：US4588832A
公开(公告)日：1986-05-13
申请号：US682267
申请日：1984-12-17
IPC分类号： C07F7/08
CPC分类号： C07F7/0827
摘要： The invention provides a novel and economical route for the synthetic preparation of a 1-alkynyl trihydrocarbyl silane compound. The method comprises the steps of reacting metallic sodium with a hydrocarbyl-substituted acetylene or allene compound to form a substituted sodium acetylide and reacting the acetylide with a trihydrocarbyl monohalogenosilane in the reaction mixture which is admixed with a polar organic solvent such as dimethylformamide.
摘要翻译： 本发明提供了用于合成制备1-炔基三烃基硅烷化合物的新颖且经济的途径。 所述方法包括使金属钠与烃基取代的乙炔或二烯化合物反应以形成取代的乙炔化钠，并将该乙炔化物与三烃基一卤代硅烷反应在与极性有机溶剂如二甲基甲酰胺混合的反应混合物中。
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