公开(公告)号：US06790323B2

公开(公告)日：2004-09-14

申请号：US09918136

申请日：2001-07-30

申请人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Foster

发明人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Foster

IPC分类号： C23C1435

CPC分类号： H01J37/3455 ,  H01J37/3408

摘要： A magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering having reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.

摘要翻译： 磁控管对于低压等离子体溅射或持续自溅射特别有利，其面积减小但目标覆盖范围完全。 磁控管包括围绕内极面的外极面，其间具有间隙。 本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。 由此，可以实现低压高离子化分级的溅射。

公开(公告)号：US06444104B2

公开(公告)日：2002-09-03

申请号：US09918022

申请日：2001-07-30

申请人： Praburam Gopalraja ,  Jianming Fu

发明人： Praburam Gopalraja ,  Jianming Fu

IPC分类号： C23C1435

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A target for a magnetron plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated and has a width of preferably at least 5 cm and an aspect ratio of at least 1:2, preferably 1:1. Various types of magnetic means positioned around the walls of the vault, some of which may rotate along the vault, create a magnetic field in the vault to support a plasma extending over a large volume of the vault from its top to its bottom. The large plasma volume within the vault increases the probability that the sputtered metal atoms will become ionized and be accelerated towards an electrically biased wafer support electrode.

摘要翻译： 磁控管等离子体溅射反应器的目标。 目标具有面向待溅射涂覆的晶片的环形保险库，并且具有优选至少5cm的宽度和至少1:2，优选1:1的纵横比的宽度。 位于拱顶壁周围的各种类型的磁性装置，其中一些可以沿着拱顶旋转，在拱顶中产生磁场，以支撑等离子体从顶部到底部在大容量的拱顶上延伸。 保险库内的大等离子体体积增加溅射的金属原子将被离子化并被朝向电偏置的晶片支撑电极加速的可能性。

公开(公告)号：US06306265B1

公开(公告)日：2001-10-23

申请号：US09546798

申请日：2000-04-11

申请人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Forster

发明人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Forster

IPC分类号： C23C1434

CPC分类号： H01J37/3455 ,  H01J37/3408

摘要： A magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering having reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target. A preferred triangular shape having a small apex angle of 20 to 30° may be formed from outer bar magnets of one magnetic polarity enclosing an inner magnet of the other magnetic polarity. The magnetron allows the generation of plasma waves in the neighborhood of 22 MHz which interact with the 1 to 20 eV electrons of the plasma to thereby increase the plasma density.

摘要翻译： 磁控管对于低压等离子体溅射或持续自溅射特别有利，其面积减小但目标覆盖范围完全。 磁控管包括围绕内极面的外极面，其间具有间隙。 本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边。 具有20-30°的小顶角的优选的三角形形状可以由包围另一个磁极性的内磁体的一个磁极的外磁棒形成。 磁控管允许在22MHz附近产生与等离子体的1至20eV电子相互作用的等离子体波，从而增加等离子体密度。

公开(公告)号：US06251242B1

公开(公告)日：2001-06-26

申请号：US09490026

申请日：2000-01-21

申请人： Jianming Fu ,  Praburam Gopalraja

发明人： Jianming Fu ,  Praburam Gopalraja

IPC分类号： C23C1435

CPC分类号： H01L21/76843 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855

摘要： A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer.

摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形槽。 位于槽周围的各种磁性装置形成一个支撑等离子体的磁场，该等离子体延伸在大容积的槽上。 例如，磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体，以产生延伸穿过槽的磁场， 密度等离子体从槽的顶部延伸到底部。 大的等离子体体积增加了溅射的金属原子将被电离的可能性。 磁性装置可以包括磁性线圈，可以在槽顶壁的后面包括另外的磁体，以在那里增加溅射，并且可以包括靠近槽侧壁底部的约束磁体。 顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。 槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。

公开(公告)号：US20100096253A1

公开(公告)日：2010-04-22

申请号：US12256428

申请日：2008-10-22

申请人： Yong Cao ,  Xianmin Tang ,  Tza-Jing Gung ,  Praburam Gopalraja

发明人： Yong Cao ,  Xianmin Tang ,  Tza-Jing Gung ,  Praburam Gopalraja

IPC分类号： C23C14/34

CPC分类号： C23C14/185 ,  C23C14/046 ,  C23C14/5833 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76883

摘要： A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate.

摘要翻译： 提供了一种用于在图案化衬底上沉积金属的方法和设备。 在具有第一能量的物理气相沉积工艺中形成金属层。 使用第二能量在金属层上进行第二物理气相沉积工艺，其中沉积与脆性和塑性表面改性方法相互作用以在基底上形成基本上保形的金属层。

公开(公告)号：US07547644B2

公开(公告)日：2009-06-16

申请号：US11264517

申请日：2005-11-01

申请人： Fusen Chen ,  Ling Chen ,  Walter Benjamin Glenn ,  Praburam Gopalraja ,  Jianming Fu

发明人： Fusen Chen ,  Ling Chen ,  Walter Benjamin Glenn ,  Praburam Gopalraja ,  Jianming Fu

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/76844 ,  C23C14/022 ,  C23C14/046 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76873

摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

摘要翻译： 在第一方面，提供了一种方法，其包括（1）在原子层沉积（ALD）室内使用原子层沉积在通孔的侧壁和底部上形成第一阻挡层; （2）通过溅射蚀刻从所述通孔的底部去除所述第一阻挡层的至少一部分; 和（3）在ALD室内的通孔的侧壁和底部上沉积第二阻挡层。 提供了许多其它实施例，以及根据这些和其它方面的系统，方法和计算机程序产品。

公开(公告)号：US20080237029A1

公开(公告)日：2008-10-02

申请号：US11691302

申请日：2007-03-26

申请人： Xianmin TANG ,  Hua Chung ,  Rongjun Wang ,  Praburam Gopalraja ,  Jick M. Yu ,  Jenn Yue Wang

发明人： Xianmin TANG ,  Hua Chung ,  Rongjun Wang ,  Praburam Gopalraja ,  Jick M. Yu ,  Jenn Yue Wang

IPC分类号： C23C14/34

CPC分类号： C23C14/046 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/083 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76868 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.

摘要翻译： 在多层金属化中通过介电层在通孔或其它垂直互连结构中形成基于钌钽的阻挡层的方法和所得产物。 可能形成不连续岛的RuTa / RuTaN双层中的RuTa层优选在氧等离子体中被有效氧化，从而桥接岛之间的间隙。 或者，通过在氧气存在下通过等离子体溅射RuTa靶，氧化钌钽氧化物反应性溅射到RuTaN上或直接沉积到下面的电介质上。

公开(公告)号：US20080083610A1

公开(公告)日：2008-04-10

申请号：US11689720

申请日：2007-03-22

申请人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

发明人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

IPC分类号： C23C14/35

CPC分类号： C23C14/0641 ,  C23C14/345 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.

摘要翻译： 一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。 源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。 通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。 它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。 集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

公开(公告)号：US07335282B2

公开(公告)日：2008-02-26

申请号：US10939832

申请日：2004-09-13

申请人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Forster

发明人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Forster

IPC分类号： C23C14/35

CPC分类号： H01J37/3455 ,  H01J37/3408

摘要： A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.

摘要翻译： 溅射工艺和磁控管对于低压等离子体溅射或持续自溅射特别有利，其中磁控管具有减小的面积但是完全的目标覆盖。 磁控管包括围绕内极面的外极面，其间具有间隙。 本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。 由此，可以实现低压高离子化分级的溅射。

公开(公告)号：US20050189217A1

公开(公告)日：2005-09-01

申请号：US11110608

申请日：2005-04-20

申请人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John Forster ,  Jick Yu

发明人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John Forster ,  Jick Yu

IPC分类号： C23C14/04 ,  C23C14/06 ,  C23C14/18 ,  C23C14/58 ,  H01L21/285 ,  H01L21/768 ,  C23C14/34

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/185 ,  C23C14/5873 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865

摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.