公开(公告)号：US09062372B2

公开(公告)日：2015-06-23

申请号：US11933086

申请日：2007-10-31

申请人： Praburam Gopalraja ,  Jianming Fu ,  Xianmin Tang ,  John C. Forster ,  Umesh Kelkar

发明人： Praburam Gopalraja ,  Jianming Fu ,  Xianmin Tang ,  John C. Forster ,  Umesh Kelkar

IPC分类号： C23C14/35 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/35 ,  H01J37/32706 ,  H01J37/3408 ,  H01J37/3455

摘要： A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

公开(公告)号：US20050266682A1

公开(公告)日：2005-12-01

申请号：US11185248

申请日：2005-07-19

申请人： Fusen Chen ,  Ling Chen ,  Walter Glenn ,  Praburam Gopalraja ,  Jianming Fu

发明人： Fusen Chen ,  Ling Chen ,  Walter Glenn ,  Praburam Gopalraja ,  Jianming Fu

IPC分类号： C23C14/02 ,  C23C14/04 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76844 ,  C23C14/022 ,  C23C14/046 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76873

摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

公开(公告)号：US06790326B2

公开(公告)日：2004-09-14

申请号：US10171318

申请日：2002-06-13

申请人： Anantha Subramani ,  Umesh Kelkar ,  Jianming Fu ,  Praburam Gopalraja

发明人： Anantha Subramani ,  Umesh Kelkar ,  Jianming Fu ,  Praburam Gopalraja

IPC分类号： C23C1435

CPC分类号： H01J37/3423 ,  H01J37/3405 ,  H01J37/3455

摘要： A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.

摘要翻译： 一种等离子体溅射反应器，其包括具有环形拱顶的靶，其表面面向待溅射涂覆的晶片，并且具有内侧壁和外侧壁以及顶部。 在管状内侧壁之间的靶的后部形成有孔。 与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管 关于目标的中心轴。

公开(公告)号：US06485618B2

公开(公告)日：2002-11-26

申请号：US09917985

申请日：2001-07-30

申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

IPC分类号： C23C1434

CPC分类号： H01L21/76844 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

公开(公告)号：US06436251B2

公开(公告)日：2002-08-20

申请号：US09854281

申请日：2001-05-11

申请人： Praburam Gopalraja ,  Jianming Fu ,  Wei Wang

发明人： Praburam Gopalraja ,  Jianming Fu ,  Wei Wang

IPC分类号： C23C1435

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. The nested magnets are rotated along the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形保险库。 优选地，磁控管包括设置在两个拱顶侧壁之后的相对极性的环形磁体和沿拱顶顶部扫描的具有相对极性的嵌套磁体的小型闭合不平衡磁控管。 嵌套的磁铁沿拱顶旋转。 与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的 铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。 前两个步骤也可以与阻隔金属一起使用。

公开(公告)号：US06413382B1

公开(公告)日：2002-07-02

申请号：US09705324

申请日：2000-11-03

申请人： Wei Wang ,  Praburam Gopalraja ,  Jianming Fu ,  Zheng Xu

发明人： Wei Wang ,  Praburam Gopalraja ,  Jianming Fu ,  Zheng Xu

IPC分类号： C23C1435

CPC分类号： H01J37/3444 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during the pulse adjacent to the area of the magnetron. The power pulsing frequency needs to be desynchronized from the rotation frequency so that the magnetron does not overlie the same area of the magnetron during different pulses. Advantageously, the power pulses are delivered above a DC background level sufficient to continue to excite the plasma so that no ignition is required for each pulse.

摘要翻译： 一种磁控溅射反应器，其具有以小于10％且优选小于1％的占空比脉冲的靶，并且还具有面积小于目标区域围绕目标中心旋转的20％的面积的小磁控管，由此非常 在与磁控管区域相邻的脉冲期间产生高等离子体密度。 功率脉冲频率需要与旋转频率不同步，从而磁控管在不同脉冲期间不会覆盖磁控管的相同区域。 有利地，功率脉冲在DC背景水平之上传送足以继续激发等离子体，使得每个脉冲不需要点火。

公开(公告)号：US08696875B2

公开(公告)日：2014-04-15

申请号：US10495506

申请日：2002-11-14

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

摘要翻译： 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述腔室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。

公开(公告)号：US20090053888A1

公开(公告)日：2009-02-26

申请号：US12288540

申请日：2008-10-20

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/02183 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/02266 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876

摘要： A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer.

摘要翻译： 一种用覆盖的导电层或填充物沉积具有降低半导体器件互连电阻率的渗透阻挡层的方法。 通过诱导在含钽隔离层内形成α钽来实现较低的电阻率。

公开(公告)号：US20070241458A1

公开(公告)日：2007-10-18

申请号：US11809153

申请日：2007-05-30

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

IPC分类号： H01L23/48

CPC分类号： H01L21/02183 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.

摘要翻译： 用于半导体器件应用的金属/金属氮化物阻挡层。 阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

公开(公告)号：US20060251872A1

公开(公告)日：2006-11-09

申请号：US11124611

申请日：2005-05-05

申请人： Jenn Wang ,  Wei Wang ,  Ronjun Wang ,  Yoichiro Tanaka ,  Hua Chung ,  Hong Zhang ,  Jick Yu ,  Praburam Gopalraja ,  Jianming Fu

发明人： Jenn Wang ,  Wei Wang ,  Ronjun Wang ,  Yoichiro Tanaka ,  Hua Chung ,  Hong Zhang ,  Jick Yu ,  Praburam Gopalraja ,  Jianming Fu

IPC分类号： B32B3/00

CPC分类号： B32B15/018 ,  C23C14/3414 ,  H01L21/2855 ,  H01L21/76844 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  H01L2924/00

摘要： A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not required to be so. The barrier layer may be sputtered from a target of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer may be formed of an alloy of copper and ruthenium in contact to a barrier layer over the dielectric.

摘要翻译： 用于在互连结构中沉积导电屏障或其它衬垫层的制造方法，产品结构，制造方法和溅射靶。 阻挡层包括难熔贵金属合金如钌/钽合金的导电金属，其可以是无定形的，尽管不需要这样。 阻挡层可以从类似组成的靶溅射。 阻挡层和靶组成可以选自难熔金属和铂族金属以及RuTa的组合。 铜高贵种子层可以由铜和钌的合金形成，与电介质上的阻挡层接触。