公开(公告)号：US10079312B2

公开(公告)日：2018-09-18

申请号：US15496014

申请日：2017-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yukie Suzuki ,  Kosei Noda ,  Yoshiaki Oikawa

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/7869

Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.

公开(公告)号：US09959822B2

公开(公告)日：2018-05-01

申请号：US15134937

申请日：2016-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Ryo Arasawa ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: G09G3/36 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/467 ,  H01L21/477 ,  H01L29/24 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368

CPC classification number: G09G3/3614 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2201/123 ,  G02F2202/10 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/08 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/467 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.

公开(公告)号：US09735285B2

公开(公告)日：2017-08-15

申请号：US15296432

申请日：2016-10-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

IPC: H01L29/04 ,  H01L29/12 ,  H01L29/78 ,  H01L29/786 ,  H01L27/108 ,  H01L27/11 ,  H01L27/12 ,  H01L49/02 ,  G06F15/76 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

公开(公告)号：US09716109B2

公开(公告)日：2017-07-25

申请号：US15063706

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L25/00 ,  H01L27/12 ,  H01L29/786 ,  H01L33/02 ,  H04R1/02 ,  H01L29/36 ,  H01L27/15 ,  H01L27/32 ,  H01L29/24 ,  H04M1/02 ,  H01L21/8234

CPC classification number: H01L27/1225 ,  H01L21/823412 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3213 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7869 ,  H01L29/78693 ,  H01L33/025 ,  H01L2924/0002 ,  H04M1/0266 ,  H04R1/02 ,  H01L2924/00

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

公开(公告)号：US09673305B2

公开(公告)日：2017-06-06

申请号：US14448015

申请日：2014-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L21/477 ,  H01L21/425 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L21/425 ,  H01L21/477 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

公开(公告)号：US09666678B2

公开(公告)日：2017-05-30

申请号：US13799246

申请日：2013-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L29/26 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/26 ,  G06K19/07758 ,  G11C7/00 ,  G11C19/28 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2223/6677 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US09653614B2

公开(公告)日：2017-05-16

申请号：US13742415

申请日：2013-01-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yukie Suzuki ,  Kosei Noda ,  Yoshiaki Oikawa

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/7869

Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.

公开(公告)号：US09634149B2

公开(公告)日：2017-04-25

申请号：US14451854

申请日：2014-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Kosei Noda ,  Yuichi Sato

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/49 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/461 ,  H01L29/66

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/31155 ,  H01L21/461 ,  H01L21/823437 ,  H01L21/823857 ,  H01L29/0653 ,  H01L29/4908 ,  H01L29/4933 ,  H01L29/6659 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region.

公开(公告)号：US09577108B2

公开(公告)日：2017-02-21

申请号：US14281031

申请日：2014-05-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78606

Abstract: Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 2×10−4 F/m2. For example, in the case of a top-gate transistor, a base insulating layer has capacitance of lower than or equal to 2×10−4 F/m2, whereby the adverse effect of an interface state between the substrate and the base insulating layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.

Abstract translation: 公开了具有使用氧化物半导体的晶体管的半导体器件。 氧化物半导体层的背面通道侧的绝缘层的电容为2×10 -4 F / m 2以下。 例如，在顶栅晶体管的情况下，基极绝缘层具有小于或等于2×10 -4 F / m 2的电容，由此衬底和基极绝缘层之间的界面态的不利影响 可以减少 因此，可以制造电特性波动小，可靠性高的半导体装置。

公开(公告)号：US09443988B2

公开(公告)日：2016-09-13

申请号：US14501965

申请日：2014-09-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/49 ,  H01L29/24 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

Abstract translation: 在具有栅极结构的晶体管中，栅电极层与其间插入有栅极绝缘层的沟道区域的氧化物半导体层重叠，当绝缘层中含有大量的氢时，氢扩散 由于绝缘层与氧化物半导体层接触，所以进入氧化物半导体层; 因此，晶体管的电特性降低。 本发明的目的是提供一种具有良好电特性的半导体器件。 与形成沟道区域的氧化物半导体层接触的绝缘层使用其氢浓度小于6×1020原子/ cm3的绝缘层。 使用绝缘层，可以防止氢的扩散，并且可以提供具有良好电特性的半导体器件。