公开(公告)号：US20210013239A1

公开(公告)日：2021-01-14

申请号：US17028014

申请日：2020-09-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/49

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US20210005754A1

公开(公告)日：2021-01-07

申请号：US17026442

申请日：2020-09-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L29/04 ,  H01L29/66

Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US20170271421A1

公开(公告)日：2017-09-21

申请号：US15456887

申请日：2017-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro JINBO ,  Kohei YOKOYAMA ,  Yuki TAMATSUKURI ,  Naoto GOTO ,  Masami JINTYOU ,  Masayoshi DOBASHI ,  Masataka NAKADA ,  Akihiro CHIDA ,  Naoyuki SENDA

IPC: H01L27/32

CPC classification number: H01L27/3258 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/5338

Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

公开(公告)号：US20170033238A1

公开(公告)日：2017-02-02

申请号：US15226051

申请日：2016-08-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

Abstract translation: 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜 以金属元素的原子比计。

公开(公告)号：US20160111445A1

公开(公告)日：2016-04-21

申请号：US14983822

申请日：2015-12-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka NAKADA ,  Hidenori MORI ,  Hisashi OHTANI

IPC: H01L27/12 ,  H01L29/417 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1335 ,  H01L29/786 ,  G02F1/1333

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2001/136218 ,  H01L29/41733 ,  H01L29/78618

Abstract: A novel display device capable of excellent reflective display is provided. The display device includes a transistor including a gate electrode layer, a gate insulating layer over the gate electrode layer, a semiconductor layer over the gate insulating layer, and a source electrode layer and a drain electrode layer over the gate insulating layer and the semiconductor layer; a reflective electrode layer on the same plane as the source electrode layer and the drain electrode layer; a coloring layer overlapping with the reflective electrode layer; a pixel electrode layer overlapping with the coloring layer; and an anti-oxidation conductive layer connected to one of the source electrode layer and the drain electrode layer. The pixel electrode layer is connected to the transistor through the anti-oxidation conductive layer.

Abstract translation: 提供能够出色的反射显示的新颖的显示装置。 显示装置包括晶体管，其包括栅极电极层，栅极电极层上的栅极绝缘层，栅极绝缘层上的半导体层，以及栅极绝缘层和半导体层上的源电极层和漏电极层 ; 与源电极层和漏电极层在同一平面上的反射电极层; 着色层与反射电极层重叠; 与着色层重叠的像素电极层; 以及连接到源极电极层和漏极电极层之一的抗氧化导电层。 像素电极层通过抗氧化导电层与晶体管连接。

公开(公告)号：US20150311260A1

公开(公告)日：2015-10-29

申请号：US14690834

申请日：2015-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoyuki SENDA ,  Masataka NAKADA ,  Takayuki ABE ,  Koji KUSUNOKI ,  Hideaki SHISHIDO

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/323 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  G06F15/0216 ,  H01L27/322 ,  H01L51/0097 ,  H01L51/5253 ,  H01L51/5284 ,  H01L2251/5338

Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.

Abstract translation: 一种灵活的输入和输出装置，其中减少了由于裂纹引起的缺陷。 输入输出装置包括第一柔性基板，第二柔性基板，第一缓冲层，第一裂纹抑制层，输入装置和发光元件。 第一柔性基板的第一表面面向第二柔性基板的第二表面。 第一缓冲层，第一裂纹抑制层和输入装置设置在第一柔性基板的第一表面侧。 第一缓冲层包括与第一裂纹抑制层重叠的区域。 第一缓冲层位于第一裂纹抑制层和第一表面之间。 输入装置包括晶体管和传感器元件。 发光元件设置在第二柔性基板的第二表面侧。

公开(公告)号：US20150228803A1

公开(公告)日：2015-08-13

申请号：US14608224

申请日：2015-01-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

Abstract translation: 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜 以金属元素的原子比计。

公开(公告)号：US20150228799A1

公开(公告)日：2015-08-13

申请号：US14615031

申请日：2015-02-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

Abstract translation: 提供了包括其中导通电流高的氧化物半导体的半导体器件。 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 设置在驱动电路部分的第一晶体管包括设置氧化物半导体膜的两个栅电极。

公开(公告)号：US20150108471A1

公开(公告)日：2015-04-23

申请号：US14516103

申请日：2014-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Hidenori MORI ,  Hisashi OHTANI

IPC: H01L27/12 ,  G02F1/1335

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/136204 ,  G02F2001/136222 ,  G02F2201/123 ,  G02F2203/02 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/7869

Abstract: A novel display device capable of adjusting color purity is provided. A novel display device with improved adhesion of a color filter is provided. A novel display device capable of excellent reflective display is provided. The display device includes a transistor, a reflective electrode layer formed on the same surface as a source electrode layer or a drain electrode layer of the transistor, a first insulating layer over the reflective electrode layer, a coloring layer which is over the first insulating layer and overlaps with the reflective electrode layer, a second insulating layer over the coloring layer, and a pixel electrode layer over the second insulating layer. The coloring layer includes at least a first opening and a second opening. The pixel electrode layer is electrically connected to the transistor through the first opening. The second insulating layer is in contact with the first insulating layer in the second opening.

Abstract translation: 提供了能够调节色纯度的新型显示装置。 提供了一种具有改进的滤色器附着力的新型显示装置。 提供能够出色的反射显示的新颖的显示装置。 显示装置包括：晶体管，形成在与晶体管的源电极层或漏极电极层相同的表面上的反射电极层，反射电极层上的第一绝缘层，位于第一绝缘层之上的着色层 并与反射电极层重叠，着色层上的第二绝缘层，以及位于第二绝缘层上的像素电极层。 着色层至少包括第一开口和第二开口。 像素电极层通过第一开口与晶体管电连接。 第二绝缘层与第二开口中的第一绝缘层接触。