公开(公告)号：US20230200105A1

公开(公告)日：2023-06-22

申请号：US18077447

申请日：2022-12-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Sachiko KAWAKAMI ,  Nobuharu OHSAWA ,  Yasumasa YAMANE ,  Tsunenori SUZUKI ,  Tomoya AOYAMA ,  Naoaki HASHIMOTO ,  Kyoko TAKEDA ,  Yui YOSHIYASU ,  Masatoshi TAKABATAKE

IPC: H10K50/81 ,  H10K59/12 ,  H10K50/82

CPC classification number: H01L51/5206 ,  H01L27/3244 ,  H01L51/5221

Abstract: To inhibit an increase in voltage of an organic semiconductor device manufactured by a method including a step of forming an aluminum oxide film over and in contact with an organic semiconductor layer. An organic semiconductor device including a first electrode, a second electrode, an organic semiconductor layer, and a buffer layer is provided. The organic semiconductor layer is positioned between the first electrode and the second electrode. The buffer layer is positioned between the organic semiconductor layer and the second electrode. A side surface of the organic semiconductor layer and a side surface of the buffer layer are substantially aligned.

公开(公告)号：US20230113593A1

公开(公告)日：2023-04-13

申请号：US17915211

申请日：2021-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshihiro KOMATSU ,  Shota MIZUKAMI ,  Shinobu KAWAGUCHI ,  Hiromi SAWAI ,  Yasumasa YAMANE ,  Yuji EGI ,  Yujiro SAKURADA ,  Shinya SASAGAWA

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/51 ,  H01L21/02

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.

公开(公告)号：US20220399338A1

公开(公告)日：2022-12-15

申请号：US17773068

申请日：2020-10-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hiroki KOMAGATA ,  Yoshihiro KOMATSU ,  Shinya SASAGAWA ,  Takashi HAMADA ,  Yasumasa YAMANE ,  Shota MIZUKAMI

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: To provide a semiconductor device with less variations in characteristics. The semiconductor device includes a first circuit region and a second circuit region over a substrate, where the first circuit region includes a plurality of first transistors and a first insulator over the plurality of first transistors; the second circuit region includes a plurality of second transistors and a second insulator over the plurality of second transistors; the second insulator includes an opening portion; the first transistors and the second transistors each include an oxide semiconductor; a third insulator is positioned over and in contact with the first insulator and the second insulator; the first insulator, the second insulator, and the third insulator inhibit oxygen diffusion; and the density of the plurality of first transistors arranged in the first circuit region is higher than the density of the plurality of second transistors arranged in the second circuit region.

公开(公告)号：US20220102505A1

公开(公告)日：2022-03-31

申请号：US17550646

申请日：2021-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke YAMAGUCHI ,  Shinobu KAWAGUCHI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yasumasa YAMANE ,  Tomosato KANAGAWA

IPC: H01L29/26 ,  H01L27/108

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US20210320212A1

公开(公告)日：2021-10-14

申请号：US17358295

申请日：2021-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20210119052A1

公开(公告)日：2021-04-22

申请号：US16759020

申请日：2018-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Yuta ENDO ,  Naoki OKUNO

IPC: H01L29/786 ,  H01L29/22 ,  H01L27/108

Abstract: A semiconductor material is an oxide including a metal element and nitrogen, in which the metal element is indium (In), an element M (M is aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn)), and zinc (Zn) and nitrogen is taken into an oxygen vacancy or bonded to an atom of the metal element.

公开(公告)号：US20200013893A1

公开(公告)日：2020-01-09

申请号：US16571769

申请日：2019-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Yuhei SATO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US20170352746A1

公开(公告)日：2017-12-07

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

公开(公告)号：US20170033230A1

公开(公告)日：2017-02-02

申请号：US15292287

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Hideomi SUZAWA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Sachiaki TEZUKA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/06

CPC classification number: H01L29/7869 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1225 ,  H01L29/16

Abstract: To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.

Abstract translation: 为了提供具有稳定电特性的晶体管，具有低截止电流的晶体管，具有高导通电流的晶体管，包括晶体管的半导体器件或耐用的半导体器件。 半导体器件包括使用硅的第一晶体管，在第一晶体管上的氧化铝膜，以及在氧化铝膜上使用氧化物半导体的第二晶体管。 氧化物半导体的氢浓度低于硅。

公开(公告)号：US20160254386A1

公开(公告)日：2016-09-01

申请号：US15047940

申请日：2016-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Yuhei SATO ,  Naoki OKUNO ,  Motoki NAKASHIMA

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0607 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969

Abstract: Provided is a transistor with stable electrical characteristics. Provided is a semiconductor device including an oxide semiconductor over a substrate, a first conductor in contact with a top surface of the oxide semiconductor, a second conductor in contact with the top surface of the oxide semiconductor, a first insulator over the first and second conductors and in contact with the top surface of the oxide semiconductor, a second insulator over the first insulator, a third conductor over the second insulator, and a third insulator over the third conductor. The third conductor overlaps with the first conductor with the first and second insulators positioned therebetween, and overlaps with the second conductor with the first and second insulators positioned therebetween. The first insulator contains oxygen. The second insulator transmits less oxygen than the first insulator. The third insulator transmits less oxygen than the first insulator.

Abstract translation: 提供了具有稳定电特性的晶体管。 提供了一种半导体器件，其包括在衬底上的氧化物半导体，与氧化物半导体的顶表面接触的第一导体，与氧化物半导体的顶表面接触的第二导体，第一和第二导体上的第一绝缘体 并且与所述氧化物半导体的顶表面接触，在所述第一绝缘体上方的第二绝缘体，所述第二绝缘体上的第三导体以及所述第三导体上的第三绝缘体。 第三导体与第一导体重叠，其中第一和第二绝缘体位于它们之间，并且与第二导体重叠，其中第一和第二绝缘体位于它们之间。 第一绝缘体包含氧。 第二绝缘体比第一绝缘体传输更少的氧。 第三绝缘体比第一绝缘体传输更少的氧。