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公开(公告)号：US20100189624A1
公开(公告)日：2010-07-29
申请号：US12359342
申请日：2009-01-26
申请人： Shinsuke Fujiwara , Hiroaki Yoshida , Ryu Hirota , Koji Uematsu , Haruko Tanaka
发明人： Shinsuke Fujiwara , Hiroaki Yoshida , Ryu Hirota , Koji Uematsu , Haruko Tanaka
CPC分类号： C30B29/403 , C30B9/06 , C30B19/04 , C30B29/406
摘要： Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.
摘要翻译： 提供III族氮化物晶体生长方法，使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法：制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体，并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含III族金属的溶剂中的溶液与基板的主面接触的步骤，将III族氮化物晶体生长到主面上。
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公开(公告)号：US07129526B2
公开(公告)日：2006-10-31
申请号：US11018740
申请日：2004-12-20
申请人： Shinsuke Fujiwara
发明人： Shinsuke Fujiwara
CPC分类号： H01L33/504 , H01L33/08 , H01L33/285 , H01L33/502 , H01L33/505 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： An ultraviolet type white color light emitting device (Q) including a 340 nm–400 nm ultraviolet InGaN-LED, a first fluorescence plate of ZnS doped with more than 1×1017cm−3 Al, In, Ga, Cl, Br or I for absorbing ultraviolet rays and producing blue light (fluorescence), a second fluorescence plate of ZnSSe or ZnSe doped with more than 1×1017 cm−3 Al, In, Ga, Cl, Br or I for absorbing the blue light, producing yellow light (fluorescence) and synthesizing white color light by mixing the yellow light with the blue light.A blue light type white color light emitting device (R) including a 410 nm–470 nm blue light InGaN-LED, a fluorescence plate of ZnSxSe1-x (untreated 0.2≦x≦0.6; heat-treated 0.3≦x≦0.67) doped with more than 1×1017 cm−3 Al, In, Ga, Cl, Br or I for absorbing the blue light, producing 568 nm–580 nm yellow light (fluorescence) and synthesizing white color light by mixing the yellow light with the blue LED light.
摘要翻译： 包括340nm-400nm紫外线InGaN-LED的紫外线型白色发光器件（Q），掺杂有大于1×10 17 cm -3的ZnS的第一荧光板， 用于吸收紫外线并产生蓝光（荧光）的SUP，Al，In，Ga，Cl，Br或I，掺杂大于1×10 17 cm 2的ZnSSe或ZnSe的第二荧光板， -3，Al，In，Ga，Cl，Br或I，用于吸收蓝光，产生黄光（荧光），并通过将黄光与蓝光混合来合成白色光。 一种蓝光型白色发光器件（R），包括410nm-470nm的蓝光InGaN-LED，ZnS的荧光板Se 1-x（ 未处理的0.2 <= x <= 0.6;经热处理的0.3 <= x <= 0.67）掺杂超过1×10 17 cm -3的Al，In，Ga，Cl ，Br或I吸收蓝光，产生568nm-580nm的黄光（荧光），并通过将黄光与蓝色LED光混合来合成白色光。
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公开(公告)号：US06858869B2
公开(公告)日：2005-02-22
申请号：US10430006
申请日：2003-05-06
申请人： Shinsuke Fujiwara
发明人： Shinsuke Fujiwara
CPC分类号： H01L33/504 , H01L33/08 , H01L33/285 , H01L33/502 , H01L33/505 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： An ultraviolet type white color light emitting device (Q) including a 340 nm-400 nm ultraviolet InGaN-LED, a first fluorescence plate of ZnS doped with more than 1×1017 cm−3 Al, In, Ga, Cl, Br or I for absorbing ultraviolet rays and producing blue light (fluorescence), a second fluorescence plate of ZnSSe or ZnSe doped with more than 1×1017 cm−3 Al, In, Ga, Cl, Br or I for absorbing the blue light, producing yellow light (fluorescence) and synthesizing white color light by mixing the yellow light with the blue light.A blue light type white color light emitting device (R) including a 410 nm-470 nm blue light InGaN-LED, a fluorescence plate of ZnSxSe1-x (untreated 0.2≦x≦0.6; heat-treated 0.3≦x≦0.67) doped with more than 1×1017 cm−3 Al, In, Ga, Cl, Br or I for absorbing the blue light, producing 568 nm-580 nm yellow light (fluorescence) and synthesizing white color light by mixing the yellow light with the blue LED light.
摘要翻译： 包括340nm-400nm紫外线InGaN-LED的紫外线型白色发光器件（Q），掺杂有大于1×10 17 cm -3的Al的ZnS的第一荧光板，In，Ga，Cl， Br或I吸收紫外线并产生蓝光（荧光），ZnSSe或ZnSe的第二荧光板掺杂超过1×10 17 cm -3的Al，In，Ga，Cl，Br或I，用于吸收 蓝光，产生黄光（荧光），并通过将黄光与蓝光混合来合成白色光。一种蓝光型白光发光器件（R），包括410nm-470nm的蓝光InGaN-LED， 掺杂了大于1×10 17 cm -3的Al，In，Ga，Cl，Br或ZnSxSe1-x（未处理的0.2 <= x <= 0.6;热处理的0.3 <= x <= 0.67） 我用于吸收蓝光，产生568nm-580nm的黄光（荧光），并通过将黄光与蓝色LED光混合来合成白色光。
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公开(公告)号：US4611939A
公开(公告)日：1986-09-16
申请号：US675321
申请日：1984-11-28
申请人： Shinsuke Fujiwara
发明人： Shinsuke Fujiwara
IPC分类号： B41J13/02 , B41J13/036 , B41J13/042 , B41J13/076
CPC分类号： B41J13/036 , B41J13/042
摘要： A sheet feeding device in an impact-type printer, in which a leaf spring member is provided below a platen which is in confronting relationship with printing heads. The pressure rollers are rotatably mounted on the leaf spring member while a cam surface is defined on one of the guide shafts which mounts the printing mechanism for reciprocal movements along the platen. The leaf spring member at one end engages the cam surface so that it is flexibly displaced with respect to the platen in response to rotation of the guide shaft so as to move the pressure rollers towards or away from the platen.
摘要翻译： 一种冲击式打印机中的片材进给装置，其中在与打印头处于相对关系的压板下方设置板簧构件。 压力辊可旋转地安装在板簧构件上，而凸轮表面限定在一个引导轴上，该导向轴安装用于沿着压板的往复运动的打印机构。 一端的板簧构件接合凸轮表面，使得其响应于引导轴的旋转而相对于压板被灵活地移位，以便使压力辊朝向或远离压板移动。
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公开(公告)号：US4601241A
公开(公告)日：1986-07-22
申请号：US695348
申请日：1985-01-28
申请人： Shinsuke Fujiwara
发明人： Shinsuke Fujiwara
CPC分类号： B41J25/006 , B41J2/245
摘要： A dot line printer in which, as its head carriage is driven, a plurality of printing heads arranged on the head carriage at equal intervals are moved in a direction perpendicular to the sheet feeding direction, to print on a printing sheet set on the platen. The dot line printer has a linear scale secured to the head carriage, and a linear sensor provided on a head carriage supporting frame, and a sensor for detecting the displacement of the linear scale to produce a detection signal which is processed to obtain the present position of the head carriage and the correct printing timing of the printing heads.
摘要翻译： 点阵式打印机，其头部托架被驱动，以等间隔布置在头托架上的多个打印头沿垂直于送纸方向的方向移动，以便在设置在台板上的打印纸张上进行打印。 点阵式打印机具有固定在头部托架上的线性刻度，以及设置在头托架支撑框架上的线性传感器，以及用于检测线性刻度的位移以产生被检测以获得当前位置的检测信号的传感器 的头部托架和打印头的正确打印定时。
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公开(公告)号：US09279194B2
公开(公告)日：2016-03-08
申请号：US12630836
申请日：2009-12-03
CPC分类号： C30B25/20 , C30B29/406
摘要： Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal (10) having an alkali-metal atom concentration of less than 1.0×1018 cm−3; and a step of growing a second III-nitride crystal (20) onto a major surface (10m) of the first III-nitride crystal (10) by HVPE, in an ambient temperature higher than 1100° C.
摘要翻译： 提供了在高于1100℃的环境温度下，通过HVPE在第一III族氮化物晶体的整个主表面上生长第二III族氮化物晶体的方法。本III-氮化物晶体生长方法包括： 制备碱金属原子浓度小于1.0×1018cm-3的第一III族氮化物晶体（10）的步骤; 以及在高于1100℃的环境温度下通过HVPE在第一III族氮化物晶体（10）的主表面（10m）上生长第二III族氮化物晶体（20）的步骤。
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公开(公告)号：US08697564B2
公开(公告)日：2014-04-15
申请号：US13283963
申请日：2011-10-28
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： C30B29/406 , C30B25/02 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.
摘要翻译： 制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括其主表面的热膨胀系数大于0.8倍且小于1.0倍的支撑基板 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性 并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。 因此，提供了一种制造能够制造基板上具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。
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68.发明授权公开(公告)号：US08642153B2
公开(公告)日：2014-02-04
申请号：US13473936
申请日：2012-05-17
IPC分类号： B32B3/00
摘要： A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×1016/cm3, and has a main surface containing a circle having a diameter of 5 cm. The single crystal silicon carbide substrate includes only one of a facet region and a non-facet region. Thus, variation in nitrogen atom concentration in the single crystal silicon carbide substrate can be suppressed.
摘要翻译： 单晶碳化硅基板具有4H型多晶型结构，其氮原子掺杂为原子浓度大于1×1016 / cm3的导电杂质，并且具有包含直径为5cm的圆的主表面 。 单晶碳化硅衬底仅包括小面区域和非面区域中的一个。 因此，能够抑制单晶碳化硅基板的氮原子浓度的变化。
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公开(公告)号：US08629457B2
公开(公告)日：2014-01-14
申请号：US13005719
申请日：2011-01-13
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L33/18
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32
摘要： A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.
摘要翻译： 碳化硅衬底具有面向半导体层的第一层和堆叠在第一层上的第二层。 第二层的位错密度高于第一层的位错密度。 因此，发光装置的量子效率和功率效率都可以高。
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70.发明授权公开(公告)号：US08470090B2
公开(公告)日：2013-06-25
申请号：US11997153
申请日：2006-07-10
IPC分类号： C30B23/06
CPC分类号： C30B23/02 , C30B23/066 , C30B25/02 , C30B29/403 , Y10T428/2982
摘要： Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal (4) is grown by vapor-phase epitaxy onto a seed crystal substrate (2) placed inside a crystal-growth compartment (24) within a crystal-growth vessel (12) provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment (24).
摘要翻译： 提供适用于具有优异结晶度的各种类型的半导体器件的大直径AlN晶体，生长AlN晶体的方法和AlN晶体衬底。 AlN晶体生长方法是通过气相外延生长AlN晶体（4）到放置在晶体生长容器（12）内的晶体生长室（24）内的晶种衬底（2）上的方法， 提供在反应室内，其特征在于，在晶体生长期间，含碳气体被供应到晶体生长室（24）的内部。
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