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171 条记录 (耗时 0.036 秒)

    Information processing system and method for processing document by using structured keywords
    61.
    发明授权
    Information processing system and method for processing document by using structured keywords 失效
    信息处理系统和使用结构化关键词处理文档的方法

    公开(公告)号：US5307266A

    公开(公告)日：1994-04-26

    申请号：US741760

    申请日：1991-08-07

    申请人： Takehisa Hayashi ,  Kouki Noguchi ,  Tsuneya Kurihara ,  Masahiro Abe

    发明人： Takehisa Hayashi ,  Kouki Noguchi ,  Tsuneya Kurihara ,  Masahiro Abe

    IPC分类号： G06F17/30 ,  G06F15/40

    CPC分类号： G06F17/30011

    摘要： A document processing system for processing documents by using structured keywords comprises an output system and a receiver system. The output system includes a first storage for storing a structured keyword dictionary containing structured keywords among which relations are systematically structured, and linkage unit providing linkage information for establishing correspondences between constituent parts of an input document and corresponding ones of the keywords. The receiver system is coupled to the output system and includes a second storage for storing structured keywords among which relations are systematically structured, and retrieving unit having inputs supplied with the document and the linkage information for retrieving the document to thereby form data of a predetermined edition format by using the structured keyword read out from the second storage. Data transfer between the output system and the receiver systems can be performed either on-line or off-line.

    摘要翻译： 通过使用结构化关键词处理文档的文档处理系统包括输出系统和接收器系统。 输出系统包括：第一存储器，用于存储包含结构化关键字的结构化关键字字典，其中系统地构造关系;以及链接单元，提供用于建立输入文档的组成部分与对应关键字之间的对应关系的链接信息。 接收机系统耦合到输出系统，并且包括用于存储结构化关键字的第二存储器，其中系统地构造关系，以及具有提供有文档的输入的检索单元和用于检索文档的链接信息，从而形成预定版本的数据 通过使用从第二个存储器读出的结构化关键字的格式。 输出系统和接收机系统之间的数据传输可以在线还是离线进行。

    Method of controlling metal thin film formation conditions
    63.
    发明授权
    Method of controlling metal thin film formation conditions 失效
    控制金属薄膜形成条件的方法

    公开(公告)号：US5175115A

    公开(公告)日：1992-12-29

    申请号：US654488

    申请日：1991-02-13

    申请人： Masahiro Abe ,  Yasukazu Mase ,  Toshihiko Katsura ,  Masaharu Aoyama

    发明人： Masahiro Abe ,  Yasukazu Mase ,  Toshihiko Katsura ,  Masaharu Aoyama

    IPC分类号： H01L21/48

    CPC分类号： H01L21/4846

    摘要： Measurement of temperature - internal stress characteristics of an Al thin film formed on an Si substrate is performed. The amount of an impurity or impurities mixed in the thin f ilm can be obtained in accordance with the measured characteristics. A migration start temperature of Al atoms in the thin film in the characteristics obtained when the temperature is increased is fed back as information to the thin film formation step, thereby controlling an impurity amount in an atmosphere for forming the thin film.

    摘要翻译： 进行在Si衬底上形成的Al薄膜的温度 - 内部应力特性的测量。 可以根据测量的特性获得混合在薄膜中的杂质或杂质的量。 当温度升高时获得的特性中，薄膜中Al原子的迁移开始温度作为信息反馈到薄膜形成步骤，从而控制用于形成薄膜的气氛中的杂质量。

    Sputtering chamber structure for high-frequency bias sputtering process
    65.
    发明授权
    Sputtering chamber structure for high-frequency bias sputtering process 失效
    用于高频偏压溅射工艺的溅射室结构

    公开(公告)号：US4897172A

    公开(公告)日：1990-01-30

    申请号：US236384

    申请日：1988-08-24

    申请人： Toshihiko Katsura ,  Masahiro Abe

    发明人： Toshihiko Katsura ,  Masahiro Abe

    IPC分类号： H01L21/31 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  C23C14/44

    CPC分类号： C23C14/345 ,  C23C14/564 ,  H01J37/3402

    摘要： A sputtering chamber structure is used to effect a high-frequency bias sputtering process and includes target and semiconductor electrodes, a metal protection plate formed to surround said target and having a first opening facing the front surface of the target, and a vacuum chamber for receiving the electrodes and the protection plate in a reduced-pressure condition during the high-frequency bias sputtering process. In the sputtering chamber structure, the protection plate further has a second opening which is formed separately from the first opening to decentralize target power in the inner space defined by the protection plate when the high-frequency bias sputtering process is effected such that the first opening is closed by the substrate electrode.

    Method for planarizing the surface of an interlayer insulating film in a semiconductor device
    67.
    发明授权
    Method for planarizing the surface of an interlayer insulating film in a semiconductor device 失效
    在半导体器件中对层间绝缘膜的表面进行平面化的方法

    公开(公告)号：US4634496A

    公开(公告)日：1987-01-06

    申请号：US797986

    申请日：1985-11-14

    申请人： Yasukazu Mase ,  Masahiro Abe ,  Masaharu Aoyama

    发明人： Yasukazu Mase ,  Masahiro Abe ,  Masaharu Aoyama

    IPC分类号： H01L21/3205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/768 ,  B44C1/22 ,  B29C17/08 ,  C03C15/00 ,  C03C25/06

    CPC分类号： H01L21/31116 ,  H01L21/31055 ,  H01L21/76819

    摘要： A method for planarizing the surface of an insulation layer deposited on a first interconnection layer to allow a second interconnection layer deposited thereon without causing a breakage of the second interconnection layer. This method is characterized in that at least two insulation films, different in etching characteristics each other, are first formed on the first interconnection layer, and then a resist layer is deposited on the second insulating film. Subsequently, a portion of the resist layer is etched to expose the top surface of the second insulating film, and the second insulating film is selectively and anisotropically etched using the remaining resist layer as a mask. After removing the first insulating film and the remaining resist mark, a third insulating film is deposited to a thickness sufficient to make flat the surface thereof.

    摘要翻译： 一种用于平坦化沉积在第一互连层上的绝缘层的表面以允许沉积在其上的第二互连层而不引起第二互连层的破损的方法。 该方法的特征在于，首先在第一互连层上形成至少两个彼此不同的蚀刻特性的绝缘膜，然后在第二绝缘膜上沉积抗蚀剂层。 随后，蚀刻抗蚀剂层的一部分以暴露第二绝缘膜的顶表面，并且使用剩余的抗蚀剂层作为掩模来选择性地和各向异性地蚀刻第二绝缘膜。 在去除第一绝缘膜和剩余的抗蚀剂标记之后，沉积第三绝缘膜至足以使其表面平坦的厚度。

    Endless belt separator having an unsupported separating surface
    68.
    发明授权
    Endless belt separator having an unsupported separating surface 失效
    无端带分离器具有未支撑的分离表面

    公开(公告)号：US4607832A

    公开(公告)日：1986-08-26

    申请号：US710811

    申请日：1985-03-12

    申请人： Masahiro Abe

    发明人： Masahiro Abe

    IPC分类号： B66B13/30 ,  B65H3/04

    CPC分类号： B65H3/042 ,  B65H2701/1912

    摘要： A delivery device in which an endless belt rotatably driven is brought into contact with the foremost sheet of a stack of sheets of paper stored in a registered relationship with each other and the sheets of paper are delivered one at a time by the endless belt through a gate gap defined by a rotary member which guides the endless belt and a gate forming member disposed in opposed relationship with the rotary member. The sheets of paper can be delivered one at a time in a predetermined spaced apart relationship by utilizing the slack of the endless belt.

    摘要翻译： 一种输送装置，其中旋转驱动的环形带与彼此以注册关系存储的一叠纸张的最前面的纸张接触，并且纸张被环形带一次一个地输送通过一个 由引导环形带的旋转构件限定的门间隙和与旋转构件相对设置的门形成构件。 通过利用环形带的松弛，纸张可以以预定间隔的关系一次一个地传送。