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    SEMICONDUCTOR DEVICE STRUCTURE
    61.
    发明申请
    SEMICONDUCTOR DEVICE STRUCTURE 审中-公开

    公开(公告)号：US20180122775A1

    公开(公告)日：2018-05-03

    申请号：US15846831

    申请日：2017-12-19

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Hsun-Ying Huang

    IPC: H01L25/065

    Abstract: A semiconductor device structure is provided. The semiconductor device structure has a first surface and a second surface. A first charged layer is disposed over the second surface. A dielectric layer separates a surface of the first charged layer that is closest to the semiconductor substrate from the second surface of the semiconductor substrate. A second charged layer is over the first charged layer. The first charged layer and the second charged layer are different materials and have a same charge polarity.

    MECHANISMS FOR FORMING IMAGE-SENSOR DEVICE WITH EXPITAXIAL ISOLATION FEATURE
    62.
    发明申请
    MECHANISMS FOR FORMING IMAGE-SENSOR DEVICE WITH EXPITAXIAL ISOLATION FEATURE 审中-公开

    公开(公告)号：US20180033812A1

    公开(公告)日：2018-02-01

    申请号：US15718061

    申请日：2017-09-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-I Hsu ,  Feng-Chi Hung ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    IPC: H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

    Abstract: An image-sensor device includes a substrate including a pixel region and a logic region. A logic transistor is disposed in the logic region and is surrounded by a logic isolation feature. A radiation-sensing region is disposed in the pixel region of the substrate. An epitaxial pixel isolation feature is disposed in the pixel region and surrounds the radiation-sensing region. A doped region with a same doping polarity as the radiation-sensing region is located between a bottom of the radiation-sensing region and the back surface of the substrate. The epitaxial pixel isolation feature is in direct contact with the doped region. The doped region extends continuously under the pixel region and the logic region. The epitaxial pixel isolation feature is in direct contact with the doped region, and the logic isolation feature is spaced apart from the doped region.

    Stacked structure for CMOS image sensors including through-substrate-via contacting negative bias circuit
    69.
    发明授权
    Stacked structure for CMOS image sensors including through-substrate-via contacting negative bias circuit 有权

    公开(公告)号：US12176370B2

    公开(公告)日：2024-12-24

    申请号：US17336852

    申请日：2021-06-02

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Sheng-Chau Chen ,  Feng-Chi Hung ,  Sheng-Chan Li

    IPC: H01L27/146

    Abstract: Some embodiments relate to an image sensor. The image sensor includes a semiconductor substrate including a pixel region and a peripheral region. A backside isolation structure extends into a backside of the semiconductor substrate and laterally surrounds the pixel region. The backside isolation structure includes a metal core, and a dielectric liner separates the metal core from the semiconductor substrate. A conductive feature is disposed over a front side of the semiconductor substrate. A through substrate via extends from the backside of the semiconductor substrate through the peripheral region to contact the conductive feature. The through substrate via is laterally offset from the backside isolation structure. A conductive bridge is disposed beneath the backside of the semiconductor substrate and electrically couples the metal core of the backside isolation structure to the through substrate via.

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