摘要:
A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.
摘要:
According to one embodiment, a first substrate and a second substrate are pressed from an opposite surface of a joint surface of the second substrate such that a joint surface of the first substrate and the joint surface of the second substrate are in contact with each other. The second substrate is restrained by a member to provide a gap between the joint surfaces. It is determined, based on a temporal change of a joint interface calculated based on an image imaged from the opposite surface side of the joint surface, whether joining is normally performed.
摘要:
According to one embodiment, a first substrate and a second substrate are pressed from an opposite surface of a joint surface of the second substrate such that a joint surface of the first substrate and the joint surface of the second substrate are in contact with each other. The second substrate is restrained by a member to provide a gap between the joint surfaces. It is determined, based on a temporal change of a joint interface calculated based on an image imaged from the opposite surface side of the joint surface, whether joining is normally performed.
摘要:
An optical semiconductor module comprises an optical transmission channel including a waveguide transmitting a light beam, a holding member whose holding member holds the channel with the end of the channel being exposed from the surface, electric wiring formed on the surface, an optical semiconductor element, mounted above the surface, including an active area to emit or receive a light beam and an electrode pad electrically connected to the electric wiring, the active area optically coupled to the waveguide at the end of the channel, and an electrical insulation film between the optical semiconductor element and the holding member, including openings each corresponding to an electrical connection between the electrode pad and the electric wiring, and an optically coupling portion between the active area and the waveguide, the electrical insulation film being in contact with a portion of the end of the channel.
摘要:
An optical semiconductor module comprises an optical transmission channel including a waveguide transmitting a light beam, a holding member whose holding member holds the channel with the end of the channel being exposed from the surface, electric wiring formed on the surface, an optical semiconductor element, mounted above the surface, including an active area to emit or receive a light beam and an electrode pad electrically connected to the electric wiring, the active area optically coupled to the waveguide at the end of the channel, and an electrical insulation film between the optical semiconductor element and the holding member, including openings each corresponding to an electrical connection between the electrode pad and the electric wiring, and an optically coupling portion between the active area and the waveguide, the electrical insulation film being in contact with a portion of the end of the channel.
摘要:
A semiconductor device comprises a semiconductor substrate having an through hole, a first insulation resin layer formed on an inner surface of the through hole, a second insulation resin layer formed on at least one of front and rear surfaces of the semiconductor substrate, and a first conductor layer formed in the through hole to connect at least both front and rear surfaces of the semiconductor substrate and insulated from the inner surface of the through hole with the first insulation resin layer. A second conductor layer (wiring pattern) which is electrically connected to the first conductor layer in the through hole is further provided on the second insulation resin layer. The conductor layer formed in the through hole and constituting a connecting plug has a high insulation reliability. Therefore, a semiconductor device suitable for a multi-chip package and the like can be obtained. Further, since the forming ability of the conductor layer connecting the front and rear surfaces and the insulation layer is high, the manufacturing cost can be reduced.
摘要:
An optical semiconductor module comprises a guide which has a positioning portion for an optical transmission line, an optical semiconductor mounting surface from which one end face of the optical transmission line disposed in the positioning portion is exposed, and a wiring layer formed on the optical semiconductor mounting surface. An optical semiconductor element is mounted on the optical semiconductor mounting surface of the guide, with a light-emitting surface or a light-receiving surface thereof facing the one. end face of the optical transmission line, and is electrically connected to the wiring layer.
摘要:
A piezoelectric sensor for measuring an external force is disclosed which is accommodated in a cassette through a sealing member and provided with a pair of electrodes which are respectively bonded to opposite sides of a piezoelectric element. A masking strip made of a highly insulative material covers the whole area of and end face of the piezoelectric element, which is exposed to the outside of the sensor, and a desired width of an end face of each of the electrodes adjacent to the end face of the piezoelectric element. This maintains a high resistance between the electrodes having the piezoelectric element therebetween and thereby promotes accurate measurement without being effected by changes in the resistance of the sealing member due to temperature variation. The sensor is effectively applicable to a vortex flow meter.