公开(公告)号：US20060228900A1

公开(公告)日：2006-10-12

申请号：US11094462

申请日：2005-03-31

申请人： Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02046 ,  C23C16/0245 ,  C23C16/46 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/3185 ,  H01L21/76814

摘要： A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber, and exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about 900° C. to remove the oxide layer from the substrate. The substrate is then maintained at a second temperature different than the first substrate temperature, and a silicon-containing film is formed on the substrate at the second substrate temperature.

公开(公告)号：US20050199872A1

公开(公告)日：2005-09-15

申请号：US10797425

申请日：2004-03-10

申请人： Pradip Roy ,  Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Pradip Roy ,  Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L29/161 ,  H01L29/49 ,  H01L29/06

CPC分类号： H01L21/67109 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2807 ,  H01L29/161

摘要： A SiGe thin layer semiconductor structure containing a substrate having a dielectric layer, a variable composition SixGe1-x layer on dielectric layer, and a Si cap layer on the variable composition SixGe1-x layer. The variable composition SixGe1-x layer can contain a SixGe1-x layer with a graded Ge content or a plurality of SixGe1-x sub-layers each with different Ge content. In one embodiment of the invention, the SiGe thin layer semiconductor structure contains a semiconductor substrate having a dielectric layer, a Si-containing seed layer on the dielectric layer, a variable composition SixGe1-x layer on the seed layer, and a Si cap layer on the variable composition SixGe1-x layer. A method and processing tool for fabricating the SiGe thin layer semiconductor structure are also provided.

摘要翻译： SiGe薄层半导体结构，其包含在电介质层上具有电介质层，可变成分Si x 1 Ge 1-x层的衬底和可变组件上的Si覆盖层 组合物Si 1 x 1-x <＆gt;层。 可变成分Si x 1 Ge 1-x层可以含有Si x N 1 Ge 1-x层，其中a 分级的Ge含量或多个具有不同Ge含量的Si x 1 Ge 1-x N sub子层。 在本发明的一个实施例中，SiGe薄层半导体结构包含具有电介质层的半导体衬底，介电层上的含Si种子层，可变成分Si x Si -x 层，以及可变成分Si x 1 Ge 1-x层上的Si覆盖层。 还提供了一种用于制造SiGe薄层半导体结构的方法和处理工具。

公开(公告)号：US20050066892A1

公开(公告)日：2005-03-31

申请号：US10673375

申请日：2003-09-30

申请人： Anthony Dip ,  Seungho Oh ,  Allen Leith

发明人： Anthony Dip ,  Seungho Oh ,  Allen Leith

IPC分类号： C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  C30B1/00 ,  C23C16/00 ,  H01L21/36

CPC分类号： C30B25/02 ,  C23C16/24 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

摘要： A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.

摘要翻译： 提供了一种用于在处理系统中通过低压沉积工艺在衬底上沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底，加热衬底并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在衬底上形成含硅膜。 该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择性地沉积含硅膜。 提供了一种包含用于使用HCD工艺气体在衬底上形成含硅膜的处理系统的处理工具。

公开(公告)号：US20050026453A1

公开(公告)日：2005-02-03

申请号：US10630969

申请日：2003-07-31

申请人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31

CPC分类号： H01L21/28194 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28167 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.

摘要翻译： 使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。 待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。 处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。 本发明的一个实施例提供Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度在衬底上变化小于约1A。