公开(公告)号：US20100090309A1

公开(公告)日：2010-04-15

申请号：US12251733

申请日：2008-10-15

申请人： Noel Rocklein ,  Chris M. Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

发明人： Noel Rocklein ,  Chris M. Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

IPC分类号： H01L29/92 ,  H01L21/31 ,  H01L23/58

CPC分类号： H01L21/28273 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

摘要： Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

摘要翻译： 一些实施例包括电介质结构。 这些结构包括彼此直接相对的第一和第二部分。 第一部分可以包含第一相和第二相的均匀混合物。 第一相可以具有大于或等于25的介电常数，并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成， 等于25.一些实施例包括包含上述类型的电介质结构的电气部件，例如电容器和晶体管。 一些实施方案包括形成电介质结构的方法，并且一些实施方案包括形成电组件的方法。

公开(公告)号：US07618874B1

公开(公告)日：2009-11-17

申请号：US12114124

申请日：2008-05-02

申请人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

发明人： Kevin Shea ,  Brett Busch ,  Farrell Good ,  Irina Vasilyeva ,  Vishwanath Bhat

IPC分类号： H01L21/20 ,  H01L21/108

CPC分类号： H01L27/10852 ,  H01L27/10894 ,  H01L28/91 ,  Y10T156/10

摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

摘要翻译： 形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。 在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。 屏蔽包括氮化物。 通过包含氮化物的护罩在开口内进行蚀刻。 在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。 与第一电容器电极可操作地形成电容器电介质和第二电容器电极。 考虑了其他方面和实现。

公开(公告)号：US20090244806A1

公开(公告)日：2009-10-01

申请号：US12480496

申请日：2009-06-08

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01G4/008 ,  H01G9/00

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN的材料的TiN被有效地氧化以形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0且y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US20080206950A1

公开(公告)日：2008-08-28

申请号：US11711232

申请日：2007-02-26

申请人： Vishwanath Bhat ,  Kevin R. Shea

发明人： Vishwanath Bhat ,  Kevin R. Shea

IPC分类号： H01L21/20

CPC分类号： H01L28/91

摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.

摘要翻译： 形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。 阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。 中间区域包括沟槽。 导电的含金属氮化物的材料形成在开口内并抵靠沟槽的侧壁部分以小于完全填充沟槽。 沟槽内的导电材料的内侧壁在含氮气氛中退火。 用液体蚀刻溶液蚀刻阵列区域内的绝缘材料，有效地暴露阵列区域内的导电材料的外侧壁部分。 阵列区域内的导电材料被并入多个电容器中。

公开(公告)号：US20050224913A1

公开(公告)日：2005-10-13

申请号：US10822062

申请日：2004-04-08

申请人： Vishwanath Bhat ,  F. Gealy ,  Cancheepuram Srividya

发明人： Vishwanath Bhat ,  F. Gealy ,  Cancheepuram Srividya

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L28/56 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。

公开(公告)号：US06855594B1

公开(公告)日：2005-02-15

申请号：US10636035

申请日：2003-08-06

申请人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

IPC分类号： H01G4/08 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/00

CPC分类号： H01G4/085 ,  H01G4/1272 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40

摘要： A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.

公开(公告)号：US20150179706A1

公开(公告)日：2015-06-25

申请号：US14137864

申请日：2013-12-20

申请人： Noel Rocklein ,  Qian Tao ,  Zhe Song ,  Vishwanath Bhat

发明人： Noel Rocklein ,  Qian Tao ,  Zhe Song ,  Vishwanath Bhat

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L27/2481 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/16 ,  H01L45/1675

摘要： Embodiments of the present disclosure describe a liner for a phase change memory (PCM) array and associated techniques and configurations. In an embodiment, a substrate, an array of phase change memory (PCM) elements disposed on the substrate, wherein individual PCM elements of the array of PCM elements comprise a chalcogenide material and a liner disposed on sidewall surfaces of the individual PCM elements, wherein the liner comprises aluminum (Al), silicon (Si) and oxygen (O). Other embodiments may be described and/or claimed.

摘要翻译： 本公开的实施例描述了用于相变存储器（PCM）阵列和相关联的技术和配置的衬垫。 在一个实施例中，衬底，设置在衬底上的相变存储器（PCM）元件的阵列，其中PCM元件阵列的各个PCM元件包括硫族化物材料和设置在各个PCM元件的侧壁表面上的衬垫，其中 衬垫包括铝（Al），硅（Si）和氧（O）。 可以描述和/或要求保护其他实施例。

公开(公告)号：US08841747B2

公开(公告)日：2014-09-23

申请号：US13090277

申请日：2011-04-20

申请人： Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

发明人： Vassil Antonov ,  Vishwanath Bhat ,  Chris Carlson

IPC分类号： H01L21/02 ,  H01L49/02

CPC分类号： H01L28/75 ,  H01L27/10844 ,  H01L28/65

摘要： A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.

摘要翻译： 公开了一种使用金属双层的方法。 首先，设置底部电极。 第二，提供了设置在下电极上并与下电极直接接触的电介质层。 然后，提供用作电容器中的顶部电极的金属双层。 金属双层配置在电介质层上并与电介质层直接接触。 金属双层由与电介质层直接接触的贵金属和与贵金属直接接触的金属氮化物组成。

公开(公告)号：US08603877B2

公开(公告)日：2013-12-10

申请号：US13461067

申请日：2012-05-01

申请人： Noel Rocklein ,  Chris Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

发明人： Noel Rocklein ,  Chris Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

IPC分类号： H01L21/316

CPC分类号： H01L21/28273 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

摘要： Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

摘要翻译： 一些实施例包括电介质结构。 这些结构包括彼此直接相对的第一和第二部分。 第一部分可以包含第一相和第二相的均匀混合物。 第一相可以具有大于或等于25的介电常数，并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成， 等于25.一些实施例包括包含上述类型的电介质结构的电气部件，例如电容器和晶体管。 一些实施方案包括形成电介质结构的方法，并且一些实施方案包括形成电组件的方法。

公开(公告)号：US08564095B2

公开(公告)日：2013-10-22

申请号：US13021910

申请日：2011-02-07

申请人： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

发明人： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC分类号： H01L21/02

CPC分类号： H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.

摘要翻译： 形成电容器的方法包括在支撑材料中形成至少一个孔，在所述至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及形成第一导电材料 在该至少一个孔内的钌材料上。 然后可以移除支撑材料，并且氮化钛材料可被氧化以形成二氧化钛材料。 然后可以在二氧化钛材料的外表面上形成第二导电材料。 还公开了电容器，半导体器件和形成包括电容器的半导体器件的方法。