TRANSFER-BONDING METHOD FOR THE LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE ARRAY
    63.
    发明申请
    TRANSFER-BONDING METHOD FOR THE LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE ARRAY 审中-公开
    用于发光装置和发光装置阵列的转移接合方法

    公开(公告)号:US20130026511A1

    公开(公告)日:2013-01-31

    申请号:US13557231

    申请日:2012-07-25

    IPC分类号: H01L33/08 H01L33/58

    摘要: A transfer-bonding method for light emitting devices including following steps is provided. A plurality of light emitting devices is formed over a first substrate and is arranged in array, wherein each of the light emitting devices includes a device layer and a sacrificial pattern sandwiched between the device layer and the first substrate. A protective layer is formed over the first substrate to selectively cover parts of the light emitting devices, and other parts of the light emitting devices are uncovered by the protective layer. The device layers uncovered by the protective layer are bonded with a second substrate. The sacrificial patterns uncovered by the protective layer are removed, so that parts of the device layers uncovered by the protective layer are separated from the first substrate and are transfer-bonded to the second substrate.

    摘要翻译: 提供了包括以下步骤的发光器件的转印 - 粘合方法。 多个发光器件形成在第一衬底上并且被布置成阵列,其中每个发光器件包括夹在器件层和第一衬底之间的器件层和牺牲图案。 在第一基板上形成保护层以选择性地覆盖部分发光器件,并且发光器件的其它部分被保护层覆盖。 由保护层未覆盖的器件层与第二衬底结合。 去除了由保护层覆盖的牺牲图案,使得未被保护层覆盖的器件层的部分与第一衬底分离并且转移到第二衬底。

    LIGHT EMITTING UNIT ARRAY AND PROJECTION SYSTEM
    64.
    发明申请
    LIGHT EMITTING UNIT ARRAY AND PROJECTION SYSTEM 有权
    发光单元阵列和投影系统

    公开(公告)号:US20120050694A1

    公开(公告)日:2012-03-01

    申请号:US13218479

    申请日:2011-08-26

    IPC分类号: G03B21/28 H01L33/10 H01L33/08

    摘要: A light emitting unit array including a plurality of micro-light emitting diodes (μ-LEDs) is provided. The micro-light emitting diodes are arranged in an array on a substrate, and each of the micro-light emitting diodes includes a reflection layer, a light emitting structure, and a light collimation structure. The light emitting structure is disposed on the reflection layer, and includes a first type doped semiconductor layer, an active layer, and a second type doped semiconductor layer that are stacked sequentially. At least a portion of the first type doped semiconductor layer, the active layer, and the second type doped semiconductor layer are sandwiched between the reflection layer and the light collimation structure.

    摘要翻译: 提供包括多个微发光二极管(μ-LED)的发光单元阵列。 微发光二极管以阵列方式排列在基板上,并且每个微型发光二极管包括反射层,发光结构和光准直结构。 发光结构设置在反射层上,并且包括依次堆叠的第一类型掺杂半导体层,有源层和第二类型掺杂半导体层。 第一类掺杂半导体层,有源层和第二掺杂半导体层的至少一部分夹在反射层和光准直结构之间。

    ALTERNATING CURRENT LIGHT EMITTING DEVICE
    67.
    发明申请
    ALTERNATING CURRENT LIGHT EMITTING DEVICE 有权
    替代电流发光器件

    公开(公告)号:US20090160370A1

    公开(公告)日:2009-06-25

    申请号:US12337755

    申请日:2008-12-18

    IPC分类号: H05B41/00

    摘要: An alternating current (AC) light emitting device includes an AC light emitting diode (LED) module and a waveform modulation unit. The AC LED module includes at least two sets of micro-diodes. The waveform modulation unit coupled between the AC LED module and an AC voltage source modulates a waveform of the AC voltage source.

    摘要翻译: 交流(AC)发光器件包括AC发光二极管(LED)模块和波形调制单元。 AC LED模块包括至少两组微型二极管。 耦合在AC LED模块和AC电压源之间的波形调制单元调制AC电压源的波形。

    Light emitting diode and fabrication method thereof
    68.
    发明授权
    Light emitting diode and fabrication method thereof 有权
    发光二极管及其制造方法

    公开(公告)号:US07358537B2

    公开(公告)日:2008-04-15

    申请号:US11069567

    申请日:2005-03-02

    IPC分类号: H01L29/22

    CPC分类号: H01L33/22

    摘要: A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.

    摘要翻译: 发光二极管(LED)。 LED包括包括n型半导体层,有源层和p型半导体层的LED芯片。 n型欧姆接触电极和p型欧姆接触电极分别与n型半导体层和p型半导体层电接触。 AlGaInN厚膜在LED芯片上,并且AlGaInN厚膜具有斜边和纹理化的顶表面。

    Method and apparatus for retrieving data from a storage device
    69.
    发明授权
    Method and apparatus for retrieving data from a storage device 失效
    用于从存储设备检索数据的方法和装置

    公开(公告)号:US5706267A

    公开(公告)日:1998-01-06

    申请号:US482997

    申请日:1995-06-07

    摘要: An apparatus and method for retrieving densely stored data from various types of magnetic media. A medium is scanned to provide an input signal. The input signal is conditioned through differentiation, equalization and partial integration. Positive and negative signal peak detectors are connected to the conditioned signal, and a threshold signal is generating corresponding to an average or midpoint of the measured positive and negative signal peaks. An output signal is generated by comparing the conditioned signal and the threshold signal. The DC component of the input signal is accounted for by feeding back the output signal and adjusting the threshold signal based on the duty cycle of the output signal.

    摘要翻译: 一种用于从各种类型的磁介质中检索密集存储的数据的装置和方法。 扫描介质以提供输入信号。 输入信号通过微分,均衡和部分积分来调节。 正和负信号峰值检测器连接到经调理的信号,并且相应于所测量的正和负信号峰值的平均值或中点产生阈值信号。 通过比较调节信号和阈值信号来产生输出信号。 通过反馈输出信号并根据输出信号的占空比来调整阈值信号来计算输入信号的直流分量。