Coupled FBAR filter
    61.
    发明授权
    Coupled FBAR filter 失效
    耦合FBAR滤波器

    公开(公告)号:US07408429B2

    公开(公告)日:2008-08-05

    申请号:US11453064

    申请日:2006-06-15

    IPC分类号: H03H9/00

    CPC分类号: H03H9/564 H03H9/0207

    摘要: A coupled FBAR filter 100 includes first and second input/output vibration portions 110 and 111 respectively including first and second lower electrodes 104 and 106, first and second upper electrodes 105 and 107, and a piezoelectric thin film 103 interposed therebetween; and a cavity 102 for commonly guaranteeing vibrations of the first and second input/output vibration portions 110 and 111 so as to couple the vibrations. The first and second input/output vibration portions 110 and 111 are located adjacently in contact with each other with a step therebetween, such that the first and second lower electrodes 104 and 106 are not electrically connected to each other and such that the first and second upper electrodes 105 and 107 are not electrically connected to each other. Insulators 108 and 109 are provided in the vicinity of the step.

    摘要翻译: 耦合的FBAR滤波器100包括分别包括第一和第二下部电极104和106的第一和第二输入/输出振动部分110和111,第一和第二上部电极105和107以及介于其间的压电薄膜103; 以及用于共同地保证第一和第二输入/输出振动部分110和111的振动以便耦合振动的空腔102。 第一和第二输入/输出振动部分110和111彼此相邻地彼此接触地定位,使得第一和第二下部电极104和106彼此不电连接,并且使得第一和第二输入/输出振动部分110和111 上电极105和107彼此不电连接。 绝缘体108和109设置在台阶附近。

    Piezoelectric resonator filter
    63.
    发明授权
    Piezoelectric resonator filter 有权
    压电谐振滤波器

    公开(公告)号:US07301420B2

    公开(公告)日:2007-11-27

    申请号:US10543837

    申请日:2004-11-19

    CPC分类号: H03H9/605 H03H9/6483

    摘要: A piezoelectric resonator filter for allowing a high-frequency signal in a desired frequency band to pass therethrough. The piezoelectric resonator filter presents a low insertion loss while securing satisfactory characteristics in a stop band. The piezoelectric resonator includes two or more reactance elements in serial connection between input and output terminals, at least three or more piezoelectric resonators in parallel connection between the input and output terminals, and an inductor having a grounded end. The reactive elements and resonators of the piezoelectric resonator are arranged in a ladder connection. Among the three or more piezoelectric resonators, only those piezoelectric resonators which do not adjoin each other are connected in common to the inductor.

    摘要翻译: 一种用于允许期望频带中的高频信号通过的压电谐振器滤波器。 压电谐振器滤波器具有低插入损耗,同时在阻带中确保令人满意的特性。 压电谐振器包括在输入和输出端子之间串联连接的两个或更多个电抗元件,在输入和输出端子之间并联连接的至少三个或更多个压电谐振器和具有接地端的电感器。 压电谐振器的电抗元件和谐振器被布置在梯形连接中。 在三个或更多个压电谐振器中,只有那些彼此不相邻的压电谐振器共同地连接到电感器。

    Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor
    65.
    发明授权
    Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor 有权
    压电器件,天线双工器以及用于此的压电谐振器的制造方法

    公开(公告)号:US07242130B2

    公开(公告)日:2007-07-10

    申请号:US10979276

    申请日:2004-11-03

    IPC分类号: H01L41/08 H03H9/17 H03H9/54

    摘要: A piezoelectric device of the present invention includes first and second piezoelectric resonators. The first piezoelectric resonator has a structure in which a cavity, a lower electrode, a piezoelectric layer, and an upper electrode are formed on a substrate. The second piezoelectric resonator has a structure in which a cavity, a lower electrode, a piezoelectric layer, and an upper electrode are formed on the substrate. A feature of the above-structure piezoelectric device is that the piezoelectric layers, have the same film thickness, and the depth of the cavity of the first piezoelectric resonator is different from the depth of the cavity of the second piezoelectric resonator.

    摘要翻译: 本发明的压电装置包括第一和第二压电谐振器。 第一压电谐振器具有在基板上形成空腔,下电极,压电层和上电极的结构。 第二压电谐振器具有在基板上形成空腔,下电极,压电层和上电极的结构。 上述结构的压电装置的特征在于,压电层具有相同的膜厚度,并且第一压电谐振器的空腔的深度与第二压电谐振器的腔的深度不同。

    Coupled FBAR filter
    66.
    发明申请
    Coupled FBAR filter 失效
    耦合FBAR滤波器

    公开(公告)号:US20060284702A1

    公开(公告)日:2006-12-21

    申请号:US11453064

    申请日:2006-06-15

    IPC分类号: H03H9/70 H03H9/58

    CPC分类号: H03H9/564 H03H9/0207

    摘要: A coupled FBAR filter 100 includes first and second input/output vibration portions110 and 111 respectively including first and second lower electrodes 104 and 106, first and second upper electrodes 105 and 107, and a piezoelectric thin film 103 interposed therebetween; and a cavity 102 for commonly guaranteeing vibrations of the first and second input/output vibration portions 110 and 111 so as to couple the vibrations. The first and second input/output vibration portions 110 and 111 are located adjacently in contact with each other with a step therebetween, such that the first and second lower electrodes 104 and 106 are not electrically connected to each other and such that the first and second upper electrodes 105 and 107 are not electrically connected to each other. Insulators 108 and 109 are provided in the vicinity of the step.

    摘要翻译: 耦合的FBAR滤波器100包括分别包括第一和第二下部电极104和106的第一和第二输入/输出振动部分110和111,第一和第二上部电极105和107以及介于其间的压电薄膜103; 以及用于共同地保证第一和第二输入/输出振动部分110和111的振动以便耦合振动的空腔102。 第一和第二输入/输出振动部分110和111彼此相邻地彼此接触地定位,使得第一和第二下部电极104和106彼此不电连接,并且使得第一和第二输入/输出振动部分110和111 上电极105和107彼此不电连接。 绝缘体108和109设置在台阶附近。

    Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor
    70.
    发明申请
    Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor 有权
    压电器件,天线双工器以及用于此的压电谐振器的制造方法

    公开(公告)号:US20050099092A1

    公开(公告)日:2005-05-12

    申请号:US10979276

    申请日:2004-11-03

    摘要: A piezoelectric device 100 includes first and second piezoeletric resonators 110, 120. The first piezoeletric resonator 110 has a structure in which a cavity 111, a lower electrode 112, a piezoeletric layer 113, and an upper electrode 114 are formed on a substrate 101. The second piezoeletric resonator 120 has a structure in which a cavity 121, a lower electrode 122, a piezoeletric layer 123, and an upper electrode 124 are formed on the substrate 110. A feature of the above-structure piezoelectric device 100 is that the piezoeletric layers 113, 123 have the same film thickness and the depth t1 of the cavity 111 of the first piezoeletric resonator 110 is different from the depth t2 of the cavity 121 of the second piezoeletric resonator 120.

    摘要翻译: 压电装置100包括第一和第二压电谐振器110,120。 第一压电谐振器110具有其中在基板101上形成空腔111,下电极112,压电层113和上电极114的结构。 第二压电谐振器120具有其中在基板110上形成空腔121,下电极122,压电层123和上电极124的结构。 上述结构的压电装置100的特征在于,压电层113,123具有相同的膜厚度,并且第一压电谐振器110的空腔111的深度t 1与腔体121的深度t 2不同 第二压电谐振器120。