摘要:
A coupled FBAR filter 100 includes first and second input/output vibration portions 110 and 111 respectively including first and second lower electrodes 104 and 106, first and second upper electrodes 105 and 107, and a piezoelectric thin film 103 interposed therebetween; and a cavity 102 for commonly guaranteeing vibrations of the first and second input/output vibration portions 110 and 111 so as to couple the vibrations. The first and second input/output vibration portions 110 and 111 are located adjacently in contact with each other with a step therebetween, such that the first and second lower electrodes 104 and 106 are not electrically connected to each other and such that the first and second upper electrodes 105 and 107 are not electrically connected to each other. Insulators 108 and 109 are provided in the vicinity of the step.
摘要:
A piezoelectric filter comprises a substrate and a plurality of piezoelectric resonators provided on the same substrate. Each piezoelectric resonator comprises a cavity formed in the substrate, a lower electrode formed on the substrate, covering the cavity, a piezoelectric material layer formed on the lower electrode, and an upper electrode formed on the piezoelectric material layer. At least one of the piezoelectric resonators has a cavity formed of a plurality of cells.
摘要:
A piezoelectric resonator filter for allowing a high-frequency signal in a desired frequency band to pass therethrough. The piezoelectric resonator filter presents a low insertion loss while securing satisfactory characteristics in a stop band. The piezoelectric resonator includes two or more reactance elements in serial connection between input and output terminals, at least three or more piezoelectric resonators in parallel connection between the input and output terminals, and an inductor having a grounded end. The reactive elements and resonators of the piezoelectric resonator are arranged in a ladder connection. Among the three or more piezoelectric resonators, only those piezoelectric resonators which do not adjoin each other are connected in common to the inductor.
摘要:
A surface acoustic wave device which occupies a small mounting area and has a low profile, yet having an improved reliability, and can be made available at low cost. The surface acoustic wave device comprises a piezoelectric substrate, a function region formed of comb-like electrodes for exciting surface acoustic wave provided on a main surface of the piezoelectric substrate, a space formation member covering the function region, a plurality of bump electrodes provided on a main surface of the piezoelectric substrate and a terminal electrode provided opposed to the main surface of piezoelectric substrate. The bump electrode and the terminal electrode are having a direct electrical connection, and a space between piezoelectric substrate and terminal electrode is filled with resin. When the above-configured acoustic wave device is applied for a frequency filter, a resonator, in a portable telephone unit, a keyless entry or the like communication apparatus, the overall size of such apparatus can be reduced and a higher reliability is implemented.
摘要:
A piezoelectric device of the present invention includes first and second piezoelectric resonators. The first piezoelectric resonator has a structure in which a cavity, a lower electrode, a piezoelectric layer, and an upper electrode are formed on a substrate. The second piezoelectric resonator has a structure in which a cavity, a lower electrode, a piezoelectric layer, and an upper electrode are formed on the substrate. A feature of the above-structure piezoelectric device is that the piezoelectric layers, have the same film thickness, and the depth of the cavity of the first piezoelectric resonator is different from the depth of the cavity of the second piezoelectric resonator.
摘要:
A coupled FBAR filter 100 includes first and second input/output vibration portions110 and 111 respectively including first and second lower electrodes 104 and 106, first and second upper electrodes 105 and 107, and a piezoelectric thin film 103 interposed therebetween; and a cavity 102 for commonly guaranteeing vibrations of the first and second input/output vibration portions 110 and 111 so as to couple the vibrations. The first and second input/output vibration portions 110 and 111 are located adjacently in contact with each other with a step therebetween, such that the first and second lower electrodes 104 and 106 are not electrically connected to each other and such that the first and second upper electrodes 105 and 107 are not electrically connected to each other. Insulators 108 and 109 are provided in the vicinity of the step.
摘要:
A surface acoustic wave element includes a laminated substrate where a first substrate made of a piezoelectric material is laminated over a second substrate made of a material different from that of the first substrate, and at least one pair of comb-shaped electrodes formed on one main plane of the first substrate. A step or a notch is formed on the periphery of the laminated substrate on the side of the first substrate.
摘要:
Either one of a transmission terminal connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and the other is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.
摘要:
A surface acoustic wave filter element has a piezoelectric substrate; and a plurality of inter-digital transducer (IDT) electrodes formed on the piezoelectric substrate, wherein at least one of the plurality of IDT electrodes is connected to a balanced type terminal and other IDT electrodes are connected to balanced type terminals or unbalanced type terminals, and first wiring electrode means which is connected or to be connected to the at least one IDT electrode and second wiring electrode means which is connected or to be connected to the other IDT electrodes are disposed on planes different from each other.
摘要:
A piezoelectric device 100 includes first and second piezoeletric resonators 110, 120. The first piezoeletric resonator 110 has a structure in which a cavity 111, a lower electrode 112, a piezoeletric layer 113, and an upper electrode 114 are formed on a substrate 101. The second piezoeletric resonator 120 has a structure in which a cavity 121, a lower electrode 122, a piezoeletric layer 123, and an upper electrode 124 are formed on the substrate 110. A feature of the above-structure piezoelectric device 100 is that the piezoeletric layers 113, 123 have the same film thickness and the depth t1 of the cavity 111 of the first piezoeletric resonator 110 is different from the depth t2 of the cavity 121 of the second piezoeletric resonator 120.