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    Device with phase-separated dielectric structure
    61.
    发明授权
    Device with phase-separated dielectric structure 有权
    具有相分离介质结构的器件

    公开(公告)号：US07795614B2

    公开(公告)日：2010-09-14

    申请号：US11695138

    申请日：2007-04-02

    申请人： Yiliang Wu ,  Hadi K Mahabadi ,  Beng S Ong ,  Paul F Smith

    发明人： Yiliang Wu ,  Hadi K Mahabadi ,  Beng S Ong ,  Paul F Smith

    IPC分类号： H01L29/10

    CPC分类号： H01L51/052 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    摘要： An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.

    摘要翻译： 一种电子设备，包括以下任何顺序：（a）半导体层; 和（b）包含低k介电聚合物和较高k电介质聚合物的相分离电介质结构，其中所述低k电介质聚合物在所述电介质区域中比所述较高k电介质聚合物更高的浓度 最接近半导体层的结构。

    PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS
    62.
    发明申请
    PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS 有权
    相分离电介质结构工艺

    公开(公告)号：US20080242112A1

    公开(公告)日：2008-10-02

    申请号：US11695131

    申请日：2007-04-02

    申请人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

    发明人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

    IPC分类号： H01L21/31

    CPC分类号： H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

    摘要翻译： 一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于 绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

    Phase-separated dielectric structure fabrication process
    63.
    发明授权
    Phase-separated dielectric structure fabrication process 有权
    相分离电介质结构制造工艺

    公开(公告)号：US07754510B2

    公开(公告)日：2010-07-13

    申请号：US11695131

    申请日：2007-04-02

    申请人： Yiliang Wu ,  Hadi K Mahabadi ,  Beng S Ong ,  Paul F Smith

    发明人： Yiliang Wu ,  Hadi K Mahabadi ,  Beng S Ong ,  Paul F Smith

    IPC分类号： H01L21/00

    CPC分类号： H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

    摘要翻译： 一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于 绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

    PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS
    64.
    发明申请
    PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS 有权
    相分离电介质结构工艺

    公开(公告)号：US20090234056A1

    公开(公告)日：2009-09-17

    申请号：US12436975

    申请日：2009-05-07

    申请人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

    发明人： Yiliang Wu ,  Hadi K. Mahabadi ,  Beng S. Ong ,  Paul F. Smith

    IPC分类号： C08K5/06 ,  C08K5/05

    CPC分类号： H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

    摘要翻译： 一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于 绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

    Silver nanoparticle composition comprising solvents with specific hansen solubility parameters
    70.
    发明授权
    Silver nanoparticle composition comprising solvents with specific hansen solubility parameters 有权
    银纳米颗粒组合物包含具有特定汉森溶解度参数的溶剂

    公开(公告)号：US08765025B2

    公开(公告)日：2014-07-01

    申请号：US12797251

    申请日：2010-06-09

    申请人： Yiliang Wu ,  Yulin Wang ,  Mahya Mohktari ,  Roger E. Gaynor ,  Nan-Xing Hu ,  Marko D. Saban

    发明人： Yiliang Wu ,  Yulin Wang ,  Mahya Mohktari ,  Roger E. Gaynor ,  Nan-Xing Hu ,  Marko D. Saban

    IPC分类号： H01B1/02

    CPC分类号： C09D5/24 ,  C09D7/20 ,  C09D7/62 ,  C09D11/322 ,  C09D11/52 ,  C23C18/08 ,  H01B1/22 ,  H05K1/097 ,  H05K3/125 ,  Y10T428/265

    摘要： A metal nanoparticle composition includes an organic-stabilized metal nanoparticle and a solvent in which the solvent selected has the following Hansen solubility parameters: a dispersion parameter of about 16 MPa0.5 or more, and a sum of a polarity parameter and a hydrogen bonding parameter of about 8.0 MPa0.5 or less. The metal nanoparticle composition is suitable for printing conductive lines that are uniform, smooth and narrow on various substrate surfaces. The metal nanoparticle composition is able to form printed conductive features having a coffee ring effect ratio of about 1.2 to about 0.8, a surface roughness of about 15 or less and a line width of about 200 microns or less.

    摘要翻译： 金属纳米颗粒组合物包括有机稳定的金属纳米颗粒和溶剂，其中所选择的溶剂具有以下Hansen溶解度参数：约16MPa0.5以上的分散参数以及极性参数和氢键合参数之和 为约8.0MPa0.5以下。 金属纳米颗粒组合物适用于印刷在各种基材表面上均匀，光滑和狭窄的导电线。 金属纳米颗粒组合物能够形成咖啡环效应比为约1.2至约0.8，表面粗糙度为约15或更小，线宽度为约200微米或更小的印刷导电特征。