公开(公告)号：US06801414B2

公开(公告)日：2004-10-05

申请号：US09944404

申请日：2001-09-04

申请人： Minoru Amano ,  Yoshiaki Saito

发明人： Minoru Amano ,  Yoshiaki Saito

IPC分类号： G11B539

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/228

摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.

摘要翻译： 一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。 将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。 一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。 第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。 隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。

公开(公告)号：US20080144233A1

公开(公告)日：2008-06-19

申请号：US12031472

申请日：2008-02-14

申请人： Minoru Amano ,  Yoshiaki Saito

发明人： Minoru Amano ,  Yoshiaki Saito

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/228

摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.

摘要翻译： 一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。 将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。 一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。 第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。 隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。

公开(公告)号：US07692902B2

公开(公告)日：2010-04-06

申请号：US12031472

申请日：2008-02-14

申请人： Minoru Amano ,  Yoshiaki Saito

发明人： Minoru Amano ,  Yoshiaki Saito

IPC分类号： G11B5/39 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/228

摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.

摘要翻译： 一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。 将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。 一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。 第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。 隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。

公开(公告)号：US20050088788A1

公开(公告)日：2005-04-28

申请号：US10976840

申请日：2004-11-01

申请人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

发明人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1114

摘要： There are provided a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy which has a composition selected from one of a composition region surrounded by a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %), a straight line of Fe80(at %)Ni20(at %)—Fe30(at %)Ni70(at %) and a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), and a composition region surrounded by a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), a straight line of Co90(at %)Fe10(at %)—Fe70(at %)Ni30(at %) and a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %). A maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.

公开(公告)号：US08879307B2

公开(公告)日：2014-11-04

申请号：US13424769

申请日：2012-03-20

申请人： Eiji Kitagawa ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Junichi Ito ,  Minoru Amano ,  Chikayoshi Kamata ,  Keiko Abe

发明人： Eiji Kitagawa ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Junichi Ito ,  Minoru Amano ,  Chikayoshi Kamata ,  Keiko Abe

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C19/08

CPC分类号： G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808

摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.

摘要翻译： 实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层 磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件 布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

公开(公告)号：US08508979B2

公开(公告)日：2013-08-13

申请号：US13228040

申请日：2011-09-08

申请人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Tadaomi Daibou

发明人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Tadaomi Daibou

IPC分类号： G11C11/00

CPC分类号： G11B5/66 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

摘要： According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.

摘要翻译： 根据一个实施例，磁记录元件包括堆叠体。 堆叠体包括第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和第一非磁性层。 第一非磁性层设置在第一和第二铁磁层之间。 第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。 第四铁磁层与第三铁磁层层叠。 第二非磁性层设置在第三和第四铁磁层之间。 第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。 通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

公开(公告)号：US08420499B2

公开(公告)日：2013-04-16

申请号：US13300062

申请日：2011-11-18

申请人： Tomotaka Ariga ,  Yuichi Ohsawa ,  Junichi Ito ,  Yoshinari Kurosaki ,  Saori Kashiwada ,  Toshiro Hiraoka ,  Minoru Amano ,  Satoshi Yanagi

发明人： Tomotaka Ariga ,  Yuichi Ohsawa ,  Junichi Ito ,  Yoshinari Kurosaki ,  Saori Kashiwada ,  Toshiro Hiraoka ,  Minoru Amano ,  Satoshi Yanagi

IPC分类号： H01L21/76

CPC分类号： G11B5/855 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31122

摘要： A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.

摘要翻译： 根据实施例的形成凹凸图案的方法包括：在基材上形成引导图案，所述引导图案具有凸部; 在引导图案上形成形成层，所述形成层包括通过层叠第一层和第二层而形成的层叠结构，所述第一层包括选自第一金属元素和准金属元素中的至少一种元素，所述第二层包括 与第一金属元件不同的第二金属元件; 通过在形成层上进行蚀刻，仅选择性地离开形成层在凸部的侧面; 去除引导图案; 并且通过在基材上进行蚀刻，将其余形成层用作掩模，在基材中形成凹凸图案。

公开(公告)号：US20130070523A1

公开(公告)日：2013-03-21

申请号：US13416408

申请日：2012-03-09

申请人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito

发明人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. A magnetization of the first ferromagnetic layer is fixed in a direction perpendicular to the first ferromagnetic layer. A magnetization of the second ferromagnetic layer is variable. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit stacked with the first stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer. A magnetization of the third ferromagnetic layer is variable. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. A magnetization of the fourth ferromagnetic layer is fixed in a direction perpendicular to the fourth ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers.

摘要翻译： 根据一个实施例，磁存储元件包括包括第一和第二堆叠单元的堆叠体。 第一堆叠单元包括第一和第二铁磁层和第一非磁性层。 第一铁磁层的磁化在垂直于第一铁磁层的方向固定。 第二铁磁层的磁化是可变的。 第一非磁性层设置在第一和第二铁磁层之间。 与第一堆叠单元堆叠的第二堆叠单元包括第三和第四铁磁层和第二非磁性层。 第三铁磁层的磁化是可变的。 第四铁磁层与第三铁磁层层叠。 第四铁磁层的磁化在垂直于第四铁磁层的方向固定。 第二非磁性层设置在第三和第四铁磁层之间。

公开(公告)号：US20130070522A1

公开(公告)日：2013-03-21

申请号：US13416076

申请日：2012-03-09

申请人： Daisuke Saida ,  Minoru Amano ,  Tazumi Nagasawa ,  Yuichi Ohsawa ,  Junichi Ito

发明人： Daisuke Saida ,  Minoru Amano ,  Tazumi Nagasawa ,  Yuichi Ohsawa ,  Junichi Ito

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.

摘要翻译： 根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。 磁存储元件包括包括第一和第二堆叠单元的堆叠体。 第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二铁磁层具有通过通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。 振荡的频率根据第二铁磁层的磁化方向而变化。 控制单元包括读出第二铁磁层的磁化的读取单元。

公开(公告)号：US20130069185A1

公开(公告)日：2013-03-21

申请号：US13416724

申请日：2012-03-09

申请人： Daisuke SAIDA ,  Minoru Amano ,  Yuichi Ohsawa ,  Junichi Ito ,  Hiroaki Yoda

发明人： Daisuke SAIDA ,  Minoru Amano ,  Yuichi Ohsawa ,  Junichi Ito ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01F10/3286 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3236 ,  H01F10/329 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.

摘要翻译： 根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。 第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。 第二和第三铁磁层的磁化是可变的。 第一和第四铁磁层的磁化在垂直于层表面的方向固定。 当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。