公开(公告)号：US4581743A

公开(公告)日：1986-04-08

申请号：US505481

申请日：1983-06-17

Applicant: Akira Fujimoto

Inventor： Akira Fujimoto

IPC: H01S5/026 ,  H01S5/028 ,  H01S5/062 ,  H01S5/223 ,  H01S5/40 ,  H01S3/19

CPC classification number: H01S5/2238 ,  H01S5/028 ,  H01S5/06209 ,  H01S5/4031 ,  H01S5/026 ,  H01S5/06243 ,  H01S5/4043

Abstract: An active layer and semiconductor layers putting both sides of the active layer which constitute a double hetero junction construction in a semiconductor crystal comprise a semiconductor of the same kind of conductive type. The double hetero junction portion is formed with an offset portion by a stepped portion. The active layer in the offset portion is formed with a P-N junction portion in a lateral direction. The P-N junction portion is formed by an inverted layer in which different kinds of conductors are diffused in a region from the surface of the semiconductor crystal to the offset portion.

Abstract translation: 在半导体晶体中构成双异质结结构的有源层的两侧的有源层和半导体层包括相同种类的导电类型的半导体。 双异质结部分由台阶部分形成偏移部分。 偏移部分中的有源层在横向方向上形成有P-N接合部分。 P-N结部由反向层形成，其中不同种类的导体在从半导体晶体的表面到偏移部分的区域中扩散。

公开(公告)号：US4577207A

公开(公告)日：1986-03-18

申请号：US454550

申请日：1982-12-30

Applicant: John A. Copeland

Inventor： John A. Copeland

IPC: G02B6/42 ,  H01L27/15 ,  H01L33/00 ,  H01S5/40

CPC classification number: H01L27/15 ,  H01L33/0016 ,  H01S5/4043

Abstract: A dual wavelength optical source includes a monolithic integrated pair of series-opposition connected diodes, each fabricated for emitting light having a different wavelength than the other. Polarity of a common bias current conducted through the diodes is reversed for activating alternatively light emission from the diodes. Active emission regions of the diodes are stacked upon one another for efficiently coupling the resulting beams of the different wavelengths of emitted light through a surface into the core of a single mode optical fiber.

Abstract translation: 双波长光源包括串联对置连接的二极管的单片集成对，每个被制造用于发射具有不同于另一个的波长的光。 通过二极管传导的公共偏置电流的极性相反，用于激活来自二极管的交替发光。 二极管的有源发射区域彼此堆叠，以将不同波长的发射光的所得到的光束经由表面有效地耦合到单模光纤的芯中。

公开(公告)号：US4506366A

公开(公告)日：1985-03-19

申请号：US393313

申请日：1982-06-29

Applicant: Naoki Chinone ,  Yasutoshi Kashiwada ,  Shigeo Yamashita ,  Kunio Aiki

Inventor： Naoki Chinone ,  Yasutoshi Kashiwada ,  Shigeo Yamashita ,  Kunio Aiki

IPC: H01S5/00 ,  H01S5/16 ,  H01S5/22 ,  H01S5/40 ,  H01S3/19

CPC classification number: H01S5/16 ,  H01S5/2203 ,  H01S5/4043

Abstract: A semiconductor laser device including at least a laminated region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate, wherein the third semiconductor layer has a refractive index smaller than that of the second semiconductor layer; the first and fourth semiconductor layers have a refractive index smaller than that of the second and third semiconductor layers and have a conductivity type opposite that of the second and third semiconductor layers; the forbidden band gap of the first and third semiconductor layers is greater than that of the second semiconductor layer; and at least the second and third semiconductor layers are bent so that the laser light generated inside the second semiconductor layer in the proximity of the laser light-emitting facets generates optical coupling in the third semiconductor layer and is emitted from the crystal facets of the third semiconductor layer. The device of the present invention is effective for increasing the output of semiconductor laser devices.

Abstract translation: 一种半导体激光装置，其特征在于，在规定的半导体基板上至少具有第一，第二，第三，第四和第四半导体层的层叠区域，其中，所述第三半导体层的折射率小于所述第二半导体层的折射率; 第一和第四半导体层的折射率小于第二和第三半导体层的折射率，并且具有与第二和第三半导体层相反的导电类型; 第一和第三半导体层的禁带宽大于第二半导体层的禁带宽; 并且至少第二和第三半导体层被弯曲，使得在激光发射面附近在第二半导体层内部产生的激光在第三半导体层中产生光耦合，并从第三半导体层的晶面发射 半导体层。 本发明的器件对于增加半导体激光器件的输出是有效的。

公开(公告)号：US4426704A

公开(公告)日：1984-01-17

申请号：US317592

申请日：1981-11-02

Applicant: Haruo Nagai ,  Yoshio Noguchi ,  Kenichiro Takahei

Inventor： Haruo Nagai ,  Yoshio Noguchi ,  Kenichiro Takahei

IPC: H01S5/00 ,  H01L27/15 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/227 ,  H01S5/40 ,  H01S3/19

CPC classification number: H01S5/4043 ,  H01L27/15 ,  H01S5/0422 ,  H01S5/06206 ,  H01S5/2275

Abstract: In a semiconductor laser, a laminated multi-layer body is on a prescribed region of the surface of a semiconductor substrate of first conductivity type, and a burying laminated layer body surrounds the laminated layer body in contact with the lateral wall thereof. The laminated layer body includes a first cladding layer having the first conductivity type, a first active layer, a second cladding layer having the opposite conductivity type (second conductivity type) to that of the semiconductor substrate, a second active layer and a third cladding layer of the first conductivity type. The burying laminated layer body includes a semiconductor electrode layer of the second conductivity type and low specific resistivity which substantially contacts the second cladding layer, and two groups of burying layers respectively provided on the prescribed regions of the top and bottom surface of said semiconductor electrode layer. When a prescribed amount of direct current is supplied to a first electrode mounted on the upper side of the laminated layer body, a second electrode deposited on the bottom side of said laminated layer body and a third electrode set on the semiconductor electrode layer included in the burying layer body, then the first and second active layers arranged very close to each other simultaneously oscillate two independent laser beams admitting of modulation with a low threshold current value.

Abstract translation: 在半导体激光器中，叠层多层体位于第一导电型的半导体衬底的表面的规定区域上，并且埋层层叠体围绕层叠体与其侧壁接触。 叠层体包括具有第一导电类型的第一包层，第一有源层，具有与半导体衬底相反的导电类型（第二导电类型）的第二覆层，第二有源层和第三覆层 的第一导电类型。 埋入叠层体包括第二导电类型的半导体电极层和与第二覆层基本接触的低电阻率，以及分别设置在所述半导体电极层的顶表面和底表面的规定区域上的两组掩埋层 。 当向安装在层叠体主体的上侧的第一电极提供预定量的直流电流时，沉积在所述叠层体的底侧上的第二电极和设置在所述层叠体主体的半导体电极层上的第三电极 埋置层体，则彼此非常接近地布置的第一和第二有源层同时振荡允许具有低阈值电流值的调制的两个独立激光束。

公开(公告)号：US4295151A

公开(公告)日：1981-10-13

申请号：US111814

申请日：1980-01-14

Applicant: Paul Nyul ,  Frederick R. Hughes

Inventor： Paul Nyul ,  Frederick R. Hughes

IPC: H01L27/15 ,  H01S5/022

CPC classification number: H01L27/15 ,  H01S5/02272 ,  H01S5/4043 ,  H01S5/02236

Abstract: An article having two parts bonded together includes an intermediate member between opposed surfaces of the two parts. The intermediate member has a plurality of openings therethrough which are filled with a bonding material. The opposed surfaces of the two parts engage opposed surfaces of the intermediate member and the bonding material is adhered to the opposed surfaces of the two parts to bond them together. The intermediate member provides control of the spacing between the two parts and the positional relationship of the two parts.

Abstract translation: 具有两个部分结合在一起的制品包括在两个部分的相对表面之间的中间构件。 中间构件具有多个穿过其中的开口，其中填充有接合材料。 两个部分的相对表面接合中间构件的相对表面，并且接合材料粘附到两个部分的相对表面以将它们结合在一起。 中间构件提供对两个部分之间的间隔的控制和两个部分的位置关系。

公开(公告)号：US4159452A

公开(公告)日：1979-06-26

申请号：US869367

申请日：1978-01-13

Applicant: Ralph A. Logan ,  James L. Merz

Inventor： Ralph A. Logan ,  James L. Merz

IPC: G02B6/12 ,  G02B6/34 ,  H01S5/10 ,  H01S5/40 ,  H01S3/19

CPC classification number: G02B6/12002 ,  H01S5/1032 ,  H01S5/4043

Abstract: A dual beam laser incorporates a tapered layer within the optical cavity of a GaAs-AlGaAs double heterostructure laser. Dual output waveguides are therefore provided at one of the mirrors. By suitable variations of layer thickness and/or composition, the device operates either as a tapered power divider (TPD), branching the incident power of a single mode into the two output arms of the device, or as a tapered mode splitter (TMS), diverting different transverse modes into different arms. Because the different modes of the TMS have different thresholds, the laser can be pulsed with current pulses of different amplitude to control at which of the waveguides an output appears. The TPD, on the other hand, has coupled cavities which tend to suppress all but one dominant longitudinal mode. Also described is an integrated optical circuit embodiment of the TPD in which the resonator is formed by etched mirrors.

Abstract translation: 双光束激光器在GaAs-AlGaAs双异质结构激光器的光腔内并入锥形层。 因此，在一个反射镜处设置双输出波导。 通过层厚度和/或组成的合适变化，该器件可以作为锥形功率分配器（TPD）工作，将单个模式的入射功率分支到器件的两个输出臂，或者作为锥形分离器（TMS） ，将不同的横向模式转向不同的臂。 由于TMS的不同模式具有不同的阈值，所以可以用不同幅度的电流脉冲对激光进行脉冲控制，以便在波导中的哪一个出现输出。 另一方面，TPD具有耦合的空腔，其倾向于抑制除了一个主要纵向模式之外的所有空间。 还描述了TPD的集成光电路实施例，其中谐振器由蚀刻反射镜形成。

公开(公告)号：US4065729A

公开(公告)日：1977-12-27

申请号：US677529

申请日：1976-04-16

Applicant: Avraham Gover ,  Ilan Samid ,  Chien-Ping Lee

Inventor： Avraham Gover ,  Ilan Samid ,  Chien-Ping Lee

IPC: H01L31/153 ,  H01L33/00 ,  H01S5/00 ,  H01S5/32 ,  H01S5/40 ,  H01S5/50 ,  H04B10/17 ,  H01S3/19

CPC classification number: H04B10/2914 ,  H01L31/153 ,  H01L33/0016 ,  H01S5/32 ,  H01S5/50 ,  H01S5/0028 ,  H01S5/4043

Abstract: A monolithic PNPN injection laser diode operating as an optical repeater is comprised of a direct band-gap semiconductor material, such as essentially GaAs, epitaxially grown in five layers with the first, third and fifth layers of GaAsAl and the second and fourth layers of GaAs, and all layers suitably doped to effectively form two complementary transistors interconnected for regenerative feedback between them with the second layer forming the base of one transistor and the collector of the other transistor, and the third layer forming the base of the other transistor and the collector of the one transistor. The PNPN laser diode thus produced has a V-I negative resistance characteristic. The second and fourth layers produce coherent laser beams in response to a light pulse received while the laser diode is biased off with its load line below its breakover voltage, thus switching the laser diode on. An externally stored charge is then discharged through the laser diode to produce the coherent laser beams until the discharging current is reduced below a threshold level. The laser diode is then cut off and the charge is restored in preparation for responding to another light pulse.

Abstract translation: 作为光中继器工作的单片PNPN注入激光二极管由直接带隙半导体材料（例如基本为GaAs）组成，其外延生长在五层中，GaAsAl的第一，第三和第五层以及第二和第四层的GaAs 并且适当地掺杂的所有层以有效地形成两个互补的互补晶体管，用于在它们之间进行再生反馈，第二层形成一个晶体管的基极和另一个晶体管的集电极，而第三层形成另一个晶体管的基极和集电极 的一个晶体管。 由此产生的PNPN激光二极管具有V-I负电阻特性。 第二和第四层响应于接收到的光脉冲产生相干激光束，同时激光二极管被其负载线偏压到其破坏电压以下，从而切换激光二极管。 然后通过激光二极管将外部存储的电荷放电以产生相干激光束，直到放电电流降低到低于阈值电平。 然后将激光二极管切断，并恢复电荷以准备响应另一个光脉冲。

公开(公告)号：US3514715A

公开(公告)日：1970-05-26

申请号：US3514715D

申请日：1967-06-29

Applicant: RCA CORP

Inventor： KOSONOCKY WALTER F

IPC: H01L25/03 ,  H01L33/00 ,  H01S5/40 ,  H01S3/00

CPC classification number: H01S5/4043 ,  H01L25/03 ,  H01L33/00 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US20240120712A1

公开(公告)日：2024-04-11

申请号：US18265287

申请日：2021-10-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kousuke TORII ,  Kyogo KANEKO

IPC: H01S5/20 ,  H01S5/02218 ,  H01S5/30 ,  H01S5/343 ,  H01S5/40

CPC classification number: H01S5/2031 ,  H01S5/02218 ,  H01S5/3095 ,  H01S5/34313 ,  H01S5/34353 ,  H01S5/4043 ,  H01S2301/18

Abstract: A semiconductor laser element includes a first emitter having a first active layer and a first guide layer, and a second emitter having a second active layer and a second guide layer. A thickness of the first emitter is different from a thickness of the second emitter so that an average value of an index DB1 and an index DB2 represented by equations (1) and (2) is 5% or less,


[Equation 1]



DB1=∫|F1(θ)−F01(θ)|dθ  (1)



[Equation 2]



DB2=∫|F2(θ)−F02(θ)|dθ  (2)

F1(θ) is a far field pattern when it is assumed that only the first emitter is present, and F2(θ) is a far field pattern when it is assumed that only the second emitter is present. F01(θ) is a far field pattern of one of two modes corresponding to a fundamental mode of the light emitted from the first and second emitters, and F02(θ) is a far field pattern of the other one.

公开(公告)号：US20180323581A1

公开(公告)日：2018-11-08

申请号：US15773162

申请日：2016-11-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler ,  André Somers

IPC: H01S5/40 ,  H01S5/022 ,  H01S5/026 ,  H01S5/00 ,  G03B21/20 ,  H01S5/20 ,  H01S5/343 ,  F21S41/16 ,  H01S5/42 ,  B23K26/21

CPC classification number: H01S5/4093 ,  H01S5/0071 ,  H01S5/0078 ,  H01S5/02252 ,  H01S5/026 ,  H01S5/0287 ,  H01S5/1028 ,  H01S5/2018 ,  H01S5/2031 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087 ,  H01S5/426 ,  H01S2304/12

Abstract: A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.