Segmented direct gate drive circuit of a depletion mode GaN power device

    公开(公告)号:US10911045B1

    公开(公告)日:2021-02-02

    申请号:US17005350

    申请日:2020-08-28

    Abstract: A segmented direct gate drive circuit of a depletion mode GaN power device, a gate voltage of the GaN power device is charged from a negative voltage turn-off level to a threshold voltage of the GaN power device; when the gate voltage of the GaN power device is charged to the threshold voltage of the GaN power device, a current mirror charging module first turns on less than N of charging current mirror modules to charge the gate voltage of the GaN power device from the threshold voltage of the GaN power device to a Miller platform voltage of the GaN power device, and turns on N charging current mirror modules to charge the gate voltage of the GaN power device from the Miller platform voltage of the GaN power device to a zero level.

    COMPOUND DOUBLE COAXIAL LINE ATMOSPHERIC PRESSURE LOW-TEMPERATURE MICROWAVE PLASMA JET SOURCE

    公开(公告)号:US20210029816A1

    公开(公告)日:2021-01-28

    申请号:US16935200

    申请日:2020-07-22

    Abstract: A compound double coaxial line atmospheric pressure low-temperature microwave plasma jet source includes an outer coaxial line, and an inner coaxial line arranged inside the outer coaxial line. The outer coaxial line includes a tube body. A metal tube is arranged in the tube body. A short-circuit plunger is arranged at the bottom of the metal tube. The inner coaxial line includes a needle electrode, and the needle electrode is arranged in the metal tube. A first gas inlet is arranged on the tube body, and the first gas inlet is connected between the tube body and the metal tube. A second gas inlet is arranged at the bottom of the metal tube, and the second gas inlet is connected between the metal tube and the needle electrode. The tube body is further provided with a microwave input port, and the microwave input port is connected to the metal tube.

    Method and apparatus for automatically adjusting the hold-off time of a DSO

    公开(公告)号:US10823762B2

    公开(公告)日:2020-11-03

    申请号:US16005763

    申请日:2018-06-12

    Abstract: The present invention provides a method and apparatus for automatically adjusting the hold-off time of a DSO based on real-time cycle measurements of the system trigger signal: obtaining a cycle sequence by measuring the system trigger signal, the maximum cycle and minimum cycle, then judging the difference of the maximum cycle and minimum cycle: if the difference is greater than a threshold set by user, setting the hold-off time to the maximum cycle, the minimum cycle or the median cycle, then returning; otherwise terminating the adjustment of the hold-off time. At this point, the hold-off time is correctly set. Therefore, the present invention reduces the complexity and time consumption of the hold-off adjustment, and allows the test signal to be quickly and stably displayed on screen of DSO, meanwhile, which makes the trigger adjustment of DSO more convenient.

    High-electron mobility transistor terahertz wave modulator loaded in waveguide

    公开(公告)号:US20200259235A1

    公开(公告)日:2020-08-13

    申请号:US16858750

    申请日:2020-04-27

    Abstract: A high-electron mobility transistor (HEMT) array terahertz wave modulator loaded in a waveguide is provided, which belongs to the technical field of electromagnetic functional devices and focuses on fast dynamic functional devices in the terahertz band. The device comprises a waveguide cavity and a modulation chip. The modulation chip comprises a semiconductor material substrate, a heterostructure material epitaxial layer, an artificial microstructure, and a socket circuit. The applied voltage controls the distribution change of the two-dimensional electron gas in the HEMT, which in turn controls the resonance mode conversion in the artificial microstructure, thereby control the transmission of electromagnetic waves in the waveguide. The modulator has a modulation depth of up to 96% and a modulation rate above 2 GHz. The invention can be realized by using micro-processing technology, and the preparation process is mature and reliable.

    Method of improving measurement speed of distributed optical fiber sensor by adopting orthogonal signals and system thereof

    公开(公告)号:US10564012B2

    公开(公告)日:2020-02-18

    申请号:US15874672

    申请日:2018-01-18

    Abstract: A method of improving measurement speed of distributed optical fiber sensors by adopting orthogonal signals and the system thereof is disclosed, which is related to the optical fiber sensor field and solves the problems that conventional technology will increasing the bandwidth of the received signal, reducing the signal-to-noise ratio of the received signal or distortion the spatial resolution of the system. The method comprises steps of generating N periodic orthogonal optical pulse sequence; injecting the N periodic orthogonal optical pulse sequence into the optical fiber under test(5); collecting the scattered light signal; demodulating the scattered light signal with the local oscillating light and then converting into digital signals; extracting the scatter information of the orthogonal optical pulses from the collected digital signals; and arranging the scattered information in order of precedence of the infusion. The measurement speed of the distributed optical fiber sensors is improved by N−1 times.

    Predictive dead time generating circuit

    公开(公告)号:US10530258B1

    公开(公告)日:2020-01-07

    申请号:US16392664

    申请日:2019-04-24

    Abstract: A predictive dead time generating circuit includes a dead time detecting module configured to detect a dead time between the switching off of the upper power transistor and the switching on of the lower power transistor, and a dead time between the switching off of the lower power transistor and the switching on of the upper power transistor, and to generate a first detecting signal and a second detecting signal according to the condition of whether the detected dead time reaches an optimal value. The logic control module changes the output of the delay module according to the judgment result of the dead time detecting module, so as to change the dead time between the driving signal of the upper power transistor and the driving signal of the lower power transistor.

    METHOD FOR 3D WAVEFORM MAPPING OF FULL-PARALLEL STRUCTURE

    公开(公告)号:US20190392551A1

    公开(公告)日:2019-12-26

    申请号:US16435465

    申请日:2019-06-08

    Abstract: The present invention provides a method for 3D waveform mapping of full-parallel structure, first, a 3D waveform mapping database is created according to the size of a 3D waveform image, the number of bits of probability value and the ADC's resolution of data acquisition module, then the 3D waveform mapping database is divided into Mt×Ma independent mapping storage areas along the time axis and the amplitude axis, and each independent mapping storage area is assigned a RAM, then RAMs are selected and addresses are calculated based on the sampling values and the structure of created 3D waveform mapping database, finally, parallel mappings are performed simultaneously on the time axis and the amplitude axis according to the selected RAMs and calculated addresses. Thus, the mapping time are shorten, especially in vector mapping mode, several RAMs are used for mapping, so the WCR of DSO is improved.

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