公开(公告)号：US20240110282A1

公开(公告)日：2024-04-04

申请号：US18475002

申请日：2023-09-26

Applicant: ASM IP Holding, B.V.

Inventor： Hideki Yoshida

IPC: C23C16/46 ,  C23C14/50

CPC classification number: C23C16/466 ,  C23C14/50

Abstract: A loadlock assembly is disclosed. Exemplary loadlock assembly includes a loadlock chamber provided with a plurality of sidewalls, a top portion, a bottom portion, and a plurality of openings through which a substrate is configured to be passed into the loadlock chamber; wherein the loadlock chamber is provided with a plurality of cooling gas intake ports; a substrate support disposed in the loadlock chamber and configured to support the substrate at or near an edge of the substrate; and a chiller unit provided with a plurality of cooling gas nozzles coupled to the cooling gas intake ports and configured to provide a cooling gas that passes through the plurality of cooling gas nozzles to the loadlock chamber.

公开(公告)号：US20240110277A1

公开(公告)日：2024-04-04

申请号：US18530653

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/34 ,  C23C16/45527 ,  C23C16/458

Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

公开(公告)号：US11946157B2

公开(公告)日：2024-04-02

申请号：US17743039

申请日：2022-05-12

Applicant: ASM IP Holding B.V.

Inventor： Rami Khazaka ,  Qi Xie

IPC: C30B25/10 ,  C30B29/06 ,  C30B29/08 ,  C30B33/12

CPC classification number: C30B25/10 ,  C30B29/06 ,  C30B29/08 ,  C30B33/12

Abstract: Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

公开(公告)号：US11946136B2

公开(公告)日：2024-04-02

申请号：US17014820

申请日：2020-09-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Carl Louis White ,  Shankar Swaminathan ,  Bhushan Zope

IPC: C23C16/448 ,  H01L21/02

CPC classification number: C23C16/448 ,  H01L21/02271 ,  H01L21/0262

Abstract: A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

公开(公告)号：US20240102163A1

公开(公告)日：2024-03-28

申请号：US18463034

申请日：2023-09-07

Applicant: ASM IP Holding, B.V.

Inventor： Patricio Romero ,  Charles Dezelah ,  Viljami J. Pore

IPC: C23C16/455

CPC classification number: C23C16/45553

Abstract: Compositions, related methods, and related systems are disclosed. The compositions can comprise a precursor and a liquid solvent. The precursor can be unstable in substantially pure form in an inert atmosphere at a temperature of at least 10° C. to at most 100° C. The solvent can have a vapor pressure of at most 1.0 mPa at a temperature of 20° C.

公开(公告)号：US20240102156A1

公开(公告)日：2024-03-28

申请号：US18462938

申请日：2023-09-07

Applicant: ASM IP Holding, B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/04 ,  C23C16/32 ,  C23C16/34

CPC classification number: C23C16/045 ,  C23C16/325 ,  C23C16/342

Abstract: Methods and systems for mixing precursors are disclosed. Systems and methods disclosed herein comprise mixing a first precursor and a second precursor in a mixing chamber. The first precursor and the second precursor can be provided to the mixing chamber in the gas phase or as liquids.

公开(公告)号：US11940785B2

公开(公告)日：2024-03-26

申请号：US17498999

申请日：2021-10-12

Applicant: ASM IP Holding B.V.

Inventor： Taku Omori

IPC: G05B23/02 ,  H01L21/67

CPC classification number: G05B23/0283 ,  G05B23/0235 ,  G05B23/0272 ,  H01L21/67017 ,  H01L21/67253 ,  H01L21/67011

Abstract: Examples of a predictive maintenance method includes determining whether analog data measured in a substrate treatment that has used a recipe exceeds an allowable threshold which corresponds to the recipe and has been determined beforehand, and notifying, in a case where it is determined that the analog data exceeds the allowable threshold in the determination, a user that a relating module which has been associated with the analog data beforehand has deteriorated.

公开(公告)号：US20240096685A1

公开(公告)日：2024-03-21

申请号：US18509543

申请日：2023-11-15

Applicant: ASM IP Holding B.V.

Inventor： KiHyun Kim ,  Sam Kim ,  Rutvij Naik

IPC: H01L21/687 ,  B65G47/90

CPC classification number: H01L21/68707 ,  B65G47/90

Abstract: An adjustable joint for insertion into a linkage of a substrate handler utilized for substrate processing. The adjustable joint allows for adjusting the pitch and roll of an attached link. Such adjustment may permit aligning a pickup surface of an end effector to a desired plane. Once adjusted, the joint may be fixed to maintain the desired orientation of the attached link. The adjustable joint allows for correcting deflection of a pickup surface of an end effector relative to a desired pickup plane due to, for example, drooping caused by high temperature usage, mechanical tolerances and/or installation errors.

公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

公开(公告)号：US20240096632A1

公开(公告)日：2024-03-21

申请号：US18367491

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Charles Dezelah ,  Jan Willem Maes

IPC: H01L21/285 ,  C23C16/16 ,  C23C16/455

CPC classification number: H01L21/28568 ,  C23C16/16 ,  C23C16/45527 ,  C23C16/45557

Abstract: The current disclosure relates to methods of depositing a material comprising a transition metal and a halogen on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a layer that comprises a transition metal and a halogen. In the method, transition metal and halogen is deposited on a substrate by a cyclical deposition process, and the method includes providing a substrate in a reactor chamber, providing a transition metal precursor into the reactor chamber in vapor phase, and providing a haloalkane precursor into the reactor chamber in vapor phase to form a material comprising transition metal and halogen on the substrate. The disclosure further relates to a deposition assembly for depositing a material including a transition metal and a halogen on a substrate.