中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

653 records (took 0.026 seconds)

    METHOD AND APPARATUS FOR MANAGING CONTACTS
    71.
    发明申请
    METHOD AND APPARATUS FOR MANAGING CONTACTS 有权
    管理联系人的方法和设备

    公开(公告)号：US20110035455A1

    公开(公告)日：2011-02-10

    申请号：US12849937

    申请日：2010-08-04

    Applicant: Ajay Kumar Sharma

    Inventor： Ajay Kumar Sharma

    IPC: G06F15/16 ,  G06F17/30 ,  G06Q30/00

    CPC classification number: H04W4/18 ,  G06Q30/0207 ,  H04L67/04 ,  H04L67/1095 ,  H04L67/2823

    Abstract: Methods and apparatus for providing messages, such as a recommendation, to one or more recipients may include receiving a message intended for one or more recipients. The methods and apparatus may further include determining the format of the message along with forwarding information for the one or more recipients. The methods and apparatus may also include forwarding the message to the one or more recipients based upon the forwarding information.

    Abstract translation: 用于向一个或多个接收者提供诸如推荐的消息的方法和装置可以包括接收针对一个或多个接收者的消息。 方法和装置还可以包括确定消息的格式以及一个或多个接收者的转发信息。 方法和装置还可以包括基于转发信息将消息转发到一个或多个接收者。

    Method for quartz photomask plasma etching
    72.
    发明授权
    Method for quartz photomask plasma etching 有权
    石英光掩模等离子体蚀刻方法

    公开(公告)号：US07879510B2

    公开(公告)日：2011-02-01

    申请号：US11031885

    申请日：2005-01-08

    Applicant: Scott Alan Anderson ,  Ajay Kumar

    Inventor： Scott Alan Anderson ,  Ajay Kumar

    IPC: G03F1/00

    CPC classification number: G03F1/30 ,  G03F1/80 ,  H01J37/32706 ,  H01J2237/334

    Abstract: A method for etching quartz is provided herein. In one embodiment, a method of etching quartz includes providing a filmstack in an etching chamber, the filmstack having a quartz layer partially exposed through a patterned layer, providing at least one fluorocarbon process gas to a processing chamber, biasing a quartz layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts and etching the quartz layer through a patterned mask. The method for etching quartz described herein is particularly suitable for fabricating photomasks having etched quartz portions.

    Abstract translation: 本文提供了一种蚀刻石英的方法。 在一个实施例中，蚀刻石英的方法包括在蚀刻室中提供薄膜堆叠，所述薄膜堆叠具有通过图案化层部分地暴露的石英层，向处理室提供至少一个碳氟化合物工艺气体，偏置设置在 处理室中的衬底支撑具有小于600瓦特的多个功率脉冲，并且通过图案化掩模蚀刻石英层。 本文所述的蚀刻石英的方法特别适用于制造具有蚀刻的石英部分的光掩模。

    Method of etching extreme ultraviolet light (EUV) photomasks
    76.
    发明授权
    Method of etching extreme ultraviolet light (EUV) photomasks 有权
    蚀刻极紫外光（EUV）光掩模的方法

    公开(公告)号：US07771895B2

    公开(公告)日：2010-08-10

    申请号：US11532280

    申请日：2006-09-15

    Applicant: Banqiu Wu ,  Madhavi R. Chandrachood ,  Ajay Kumar

    Inventor： Banqiu Wu ,  Madhavi R. Chandrachood ,  Ajay Kumar

    IPC: G03F1/00

    CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00

    Abstract: Embodiments of methods of etching EUV photomasks are provided herein. In one embodiment, a method of etching an extreme ultraviolet photomask includes providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer absorber layer, the multilayer absorber layer comprising a self-mask layer disposed over a bulk absorber layer, wherein the self-mask layer comprises tantalum and oxygen and the bulk absorber layer comprises tantalum and essentially no oxygen; etching the self-mask layer using a first etch process; and etching the bulk absorber layer using a second etch process different than the first, wherein the etch rate of the bulk absorber layer is greater than the etch rate of the self-mask layer during the second etch process.

    Abstract translation: 本文提供了蚀刻EUV光掩模的方法的实施例。 在一个实施例中，蚀刻极紫外光掩模的方法包括提供包括依次包括基底，多材料层，覆盖层和多层吸收层的光掩模，所述多层吸收层包括自对准层， 掩模层，其设置在体吸收层上，其中所述自掩模层包括钽和氧，并且所述本体吸收层包括钽并且基本上不含氧; 使用第一蚀刻工艺蚀刻自掩模层; 以及使用不同于第一蚀刻工艺的第二蚀刻工艺来蚀刻体吸收体层，其中本体吸收体层的蚀刻速率大于在第二蚀刻工艺期间自掩模层的蚀刻速率。

    Class structure based enhancer for data objects
    77.
    发明授权
    Class structure based enhancer for data objects 有权
    用于数据对象的基于类结构的增强器

    公开(公告)号：US07720877B1

    公开(公告)日：2010-05-18

    申请号：US10824092

    申请日：2004-04-14

    Applicant: Ajay Kumar

    Inventor： Ajay Kumar

    IPC: G06F7/00

    CPC classification number: G06F9/4493

    Abstract: Various embodiments of a system and method for enhancing applications for Java Data Object (JDO) persistence are disclosed. A class structure based data object enhancer may operate on the classes of an application in the absence of user input, to produce metadata to determine a persistence structure corresponding to the application classes. The class structure based data object enhancer may use the generated metadata to produce enhanced application classes. For example, the class structure based data object enhancer may incorporate calls to a JDO persistence mechanism into a class at each point where a field designated by the persistence structure to be persisted, is accessed. The class structure based data object enhancer may also generate a database schema, which may specify how the fields designated for persistence are stored in a persistent data store.

    Abstract translation: 公开了用于增强Java数据对象（JDO）持久性应用的系统和方法的各种实施例。 基于类结构的数据对象增强器可以在没有用户输入的情况下对应用的类进行操作，以产生元数据以确定与应用类相对应的持久性结构。 基于类结构的数据对象增强器可以使用生成的元数据来生成增强的应用类。 例如，基于类结构的数据对象增强器可以将访问由持久化结构指定的字段的每个点处的JDO持久机制的调用合并到一个类中。 基于类结构的数据对象增强器还可以生成数据库模式，其可以指定如何将指定用于持久性的字段存储在持久数据存储中。

    Method for photomask fabrication utilizing a carbon hard mask
    78.
    发明授权
    Method for photomask fabrication utilizing a carbon hard mask 有权
    使用碳硬掩模的光掩模制造方法

    公开(公告)号：US07718539B2

    公开(公告)日：2010-05-18

    申请号：US11565271

    申请日：2006-11-30

    Applicant: Ajay Kumar

    Inventor： Ajay Kumar

    IPC: H01L21/302

    CPC classification number: C23F4/00 ,  G03F1/80 ,  G03F7/70433 ,  H01J37/321

    Abstract: Methods for forming a photomask using a carbon hard mask are provided. In one embodiment, a method of forming a photomask includes etching a chromium layer through a patterned carbon hard mask layer in the presence of a plasma formed from a process gas containing chlorine and carbon monoxide.

    Abstract translation: 提供了使用碳硬掩模形成光掩模的方法。 在一个实施例中，形成光掩模的方法包括：在由含有氯和一氧化碳的工艺气体形成的等离子体存在下，通过图案化的碳硬掩模层蚀刻铬层。

    INJECTION SYSTEMS
    79.
    发明申请
    INJECTION SYSTEMS 失效
    注射系统

    公开(公告)号：US20100057005A1

    公开(公告)日：2010-03-04

    申请号：US12538758

    申请日：2009-08-10

    Applicant: Ines M. Aravena ,  Ajay Kumar ,  Hamid Abedi

    Inventor： Ines M. Aravena ,  Ajay Kumar ,  Hamid Abedi

    IPC: A61M19/00 ,  A61M5/20

    CPC classification number: A61B17/3472 ,  A61B17/32002 ,  A61B2090/034 ,  A61B2090/08021 ,  A61M5/3291 ,  A61M2005/3289

    Abstract: An intraosseous injection device includes a tool having a distal portion, a proximal portion, and a solution dispensing opening. The distal portion has one or more cutting surfaces. The tool can be coupled with a protective carrier. The tool can be rotatably coupled to a tool actuation mechanism. A housing has a distal end and a proximal end. The housing releasably receives a solution cartridge containing a solution. A solution dispensing mechanism dispenses solution from the solution cartridge. A gripping member grips a proximal portion of the tool. A rotation device rotates the gripping member and thereby rotates the tool about an axis. The proximal portion of the tool connects directly to the solution cartridge such that solution from the cartridge can be delivered through the solution dispensing opening. The tool is configured to rotate relative to the solution cartridge.

    Abstract translation: 骨内注射装置包括具有远侧部分，近端部分和溶液分配开口的工具。 远侧部分具有一个或多个切割表面。 该工具可与保护性载体耦合。 工具可以可旋转地联接到工具致动机构。 壳体具有远端和近端。 壳体可释放地接收包含溶液的溶液盒。 溶液分配机构从溶液盒中分配溶液。 夹持构件夹持工具的近端部分。 旋转装置旋转夹持构件，从而使工具围绕轴线旋转。 工具的近端部分直接连接到溶液盒，使得来自盒的溶液可以通过溶液分配开口输送。 该工具被配置为相对于溶液墨盒旋转。

Patent Agency Ranking