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71.发明授权公开(公告)号：US10355659B2
公开(公告)日：2019-07-16
申请号：US15784919
申请日：2017-10-16
Applicant: Akoustis, Inc.
Inventor： Dae Ho Kim , Mary Winters , Ramakrishna Vetury , Jeffrey B. Shealy
IPC: H03H3/02 , H01L41/047 , H01L41/053 , H01L41/08 , H01L41/18 , H01L41/23 , H01L41/29 , H01L41/317 , H01L41/337 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/17 , H03H9/54
Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.
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公开(公告)号：US20190044493A1
公开(公告)日：2019-02-07
申请号：US16054929
申请日：2018-08-03
Applicant: Akoustis, Inc.
Inventor： Dae Ho KIM , Pinal PATEL , Rohan W. HOULDEN , James Blanton SHEALY , Jeffrey B. SHEALY
Abstract: An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.
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公开(公告)号：US20190036504A1
公开(公告)日：2019-01-31
申请号：US16134941
申请日：2018-09-18
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US10110188B2
公开(公告)日：2018-10-23
申请号：US15342049
申请日：2016-11-02
Applicant: Akoustis, Inc.
Inventor： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US10084588B2
公开(公告)日：2018-09-25
申请号：US15642242
申请日：2017-07-05
Applicant: Akoustis, Inc.
Inventor： Jeffrey B. Shealy
Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.
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Patent Agency Ranking
76.发明申请公开(公告)号：US20170302428A1
公开(公告)日：2017-10-19
申请号：US15642242
申请日：2017-07-05
Applicant: Akoustis, Inc.
Inventor： Jeffrey B. SHEALY
Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.
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公开(公告)号：US09673384B2
公开(公告)日：2017-06-06
申请号：US14298057
申请日：2014-06-06
Applicant: Akoustis, Inc.
Inventor： Jeffrey B. Shealy
IPC: H01G4/08 , H01L41/314 , H03H9/02 , H03H9/17
CPC classification number: H01L41/314 , H01G4/08 , H03H9/02574 , H03H9/174 , H03H9/175 , Y10T29/43
Abstract: A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 1012 defects/cm2. A second electrode material is overlying the single crystal capacitor dielectric material.
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78.发明授权Integrated circuit configured with two or more single crystal acoustic resonator devices 有权集成电路配置有两个或多个单晶声谐振器装置公开(公告)号：US09571061B2
公开(公告)日：2017-02-14
申请号：US14298100
申请日：2014-06-06
Applicant: Akoustis, Inc.
Inventor： Jeffrey B. Shealy
IPC: H03H9/54 , H03H9/60 , H03H9/02 , H03H9/205 , H03H3/02 , H03H9/00 , H03H9/05 , H03H9/17 , H03H9/56 , H01L41/18 , H01L41/29 , H03H9/64
CPC classification number: H03H9/02015 , H01L41/183 , H01L41/29 , H03H3/02 , H03H9/0095 , H03H9/02574 , H03H9/0542 , H03H9/174 , H03H9/175 , H03H9/205 , H03H9/54 , H03H9/542 , H03H9/568 , H03H9/605 , H03H9/64
Abstract: A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.
Abstract translation: 可配置单晶声谐振器（SCAR）器件集成电路。 该电路包括从1到N编号的多个SCAR设备，其中N是2及更大的整数。 每个SCAR装置具有形成在衬底构件的表面区域上方的单晶压电材料的厚度。 单晶压电材料的特征在于位错密度小于1012缺陷/ cm2。
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79.发明授权Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate 有权具有单晶压电材料和体积基板上的电容器的声谐振器装置公开(公告)号：US09537465B1
公开(公告)日：2017-01-03
申请号：US14298076
申请日：2014-06-06
Applicant: Akoustis, Inc.
Inventor： Jeffrey B. Shealy
CPC classification number: H01L41/39 , H01L41/18 , H01L41/316 , H03H3/02 , H03H9/02015 , H03H9/0542 , H03H9/0595 , H03H9/13 , H03H9/173 , H03H9/174 , H03H9/175 , H03H2003/023 , H03H2003/025
Abstract: A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.
Abstract translation: 一种制造集成电路的方法。 该方法包括将包含衬底表面区域的单晶压电材料的外延材料形成为期望的厚度，并形成沟槽区域，以通过外延材料中提供的图案形成表面区域的暴露部分。 此外，该方法还包括形成顶层着陆焊盘金属和覆盖外延材料的一部分的第一电极部件和覆盖在顶侧焊盘金属上的第二电极部件。 此外，该方法可以包括处理衬底的背面以形成暴露外延材料的背面和着陆焊盘金属的背面沟槽区域，并且形成覆盖在外延材料的背面以耦合到第二电极的背面谐振器金属材料 会员覆盖在顶层着陆垫金属上。
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80.发明申请INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES 有权配有两个或更多单晶声音谐振器装置的集成电路公开(公告)号：US20150357987A1
公开(公告)日：2015-12-10
申请号：US14298100
申请日：2014-06-06
Applicant: Akoustis, Inc.
Inventor： Jeffrey B. SHEALY
CPC classification number: H03H9/02015 , H01L41/183 , H01L41/29 , H03H3/02 , H03H9/0095 , H03H9/02574 , H03H9/0542 , H03H9/174 , H03H9/175 , H03H9/205 , H03H9/54 , H03H9/542 , H03H9/568 , H03H9/605 , H03H9/64
Abstract: A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.
Abstract translation: 可配置单晶声谐振器（SCAR）器件集成电路。 该电路包括从1到N编号的多个SCAR设备，其中N是2及更大的整数。 每个SCAR装置具有形成在衬底构件的表面区域上方的单晶压电材料的厚度。 单晶压电材料的特征在于位错密度小于1012缺陷/ cm2。
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