公开(公告)号：US20190190479A1

公开(公告)日：2019-06-20

申请号：US16275655

申请日：2019-02-14

申请人： Akoustis, Inc.

发明人： Ramakrishna Vetury ,  Alexander Y. Feldman ,  Michael D. Hodge ,  Art Geiss ,  Shawn R. Gibb ,  Mark D. Boomgarden ,  Michael P. Lewis ,  Pinal Patel ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/13 ,  H03H9/10 ,  H03H9/05 ,  H03H9/02 ,  H03H3/04

CPC分类号： H03H3/02 ,  H03H3/04 ,  H03H9/02118 ,  H03H9/0514 ,  H03H9/1035 ,  H03H9/131 ,  H03H9/132 ,  H03H9/133 ,  H03H9/171 ,  H03H9/174 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/0414 ,  H03H2003/0428

摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

公开(公告)号：US20190181831A1

公开(公告)日：2019-06-13

申请号：US16282238

申请日：2019-02-21

申请人： Akoustis, Inc.

发明人： Shawn R. Gibb ,  Ramakrishna Vetury ,  Jeffrey B. Shealy ,  Mark D. Boomgarden ,  Michael P. Lewis ,  Alexander Y. Feldman

IPC分类号： H03H9/17 ,  H03H9/70 ,  H03H9/56 ,  H03H3/02

摘要： A communication system using a single crystal acoustic resonator device. The device includes a piezoelectric substrate with a piezoelectric layer formed overlying a transfer substrate. A topside metal electrode is formed overlying the substrate. A topside micro-trench is formed within the piezoelectric layer. A topside metal with a topside metal plug is formed within the topside micro-trench. First and second backside cavities are formed within the transfer substrate under the topside metal electrode. A backside metal electrode is formed under the transfer substrate, within the first backside cavity, and under the topside metal electrode. A backside metal plug is formed under the transfer substrate, within the second backside cavity, and under the topside micro-trench. The backside metal plug is connected to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside cavity, and the backside metal plug form a micro-via.

公开(公告)号：US10319898B2

公开(公告)日：2019-06-11

申请号：US15607210

申请日：2017-05-26

申请人： Akoustis, Inc.

发明人： Jeffrey B. Shealy

IPC分类号： H01G4/08 ,  H01L41/314 ,  H03H9/02 ,  H03H9/17

摘要： A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 1012 defects/cm2. A second electrode material is overlying the single crystal capacitor dielectric material.

公开(公告)号：US10256786B1

公开(公告)日：2019-04-09

申请号：US15647098

申请日：2017-07-11

申请人： Akoustis, Inc.

发明人： Shawn R. Gibb ,  Ramakrishna Vetury ,  Jeffrey B. Shealy ,  Mark D. Boomgarden ,  Michael P. Lewis ,  Alexander Y. Feldman

IPC分类号： H03H9/02 ,  H01L41/04 ,  H03H9/05 ,  H03H9/13 ,  H01L41/053 ,  H03H3/02 ,  H01L41/047 ,  H01L41/29

摘要： A communication system using a single crystal acoustic resonator device. The device includes a piezoelectric substrate with a piezoelectric layer formed overlying a thinned seed substrate. A topside metal electrode is formed overlying the substrate. A topside micro-trench is formed within the piezoelectric layer. A topside metal with a topside metal plug is formed within the topside micro-trench. First and second backside trenches are formed within the seed substrate under the topside metal electrode. A backside metal electrode is formed under the seed substrate, within the first backside trench, and under the topside metal electrode. A backside metal plug is formed under the seed substrate, within the second backside trench, and under the topside micro-trench. The backside metal plug is connected to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside trench, and the backside metal plug form a micro-via.

公开(公告)号：US10110189B2

公开(公告)日：2018-10-23

申请号：US15342061

申请日：2016-11-02

申请人： Akoustis, Inc.

发明人： Ramakrishna Vetury ,  Alexander Y. Feldman ,  Michael D. Hodge ,  Art Geiss ,  Shawn R. Gibb ,  Mark D. Boomgarden ,  Michael P. Lewis ,  Pinal Patel ,  Jeffrey B. Shealy

IPC分类号： B05D5/12 ,  H03H3/02 ,  H03H9/17

摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

公开(公告)号：US09805966B2

公开(公告)日：2017-10-31

申请号：US14341314

申请日：2014-07-25

申请人： Akoustis, Inc.

发明人： Jeffrey B. Shealy

IPC分类号： H01L29/66 ,  H01L21/76 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/17

CPC分类号： H01L21/7605 ,  H01L2224/16225 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/0523 ,  H03H9/174 ,  H03H2003/023

摘要： A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

公开(公告)号：US09362887B2

公开(公告)日：2016-06-07

申请号：US14796939

申请日：2015-07-10

申请人： Akoustis, Inc.

发明人： Jeffrey B. Shealy

IPC分类号： H03H9/00 ,  H03H9/205 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/17 ,  H03H9/56 ,  H03H9/60

CPC分类号： H03H9/02015 ,  H01L41/183 ,  H01L41/29 ,  H03H3/02 ,  H03H9/0095 ,  H03H9/02574 ,  H03H9/0542 ,  H03H9/174 ,  H03H9/175 ,  H03H9/205 ,  H03H9/54 ,  H03H9/542 ,  H03H9/568 ,  H03H9/605 ,  H03H9/64

摘要： A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.

摘要翻译： 可配置单晶声谐振器（SCAR）器件集成电路。 该电路包括从1到N编号的多个SCAR设备，其中N是2及更大的整数。 每个SCAR装置具有形成在衬底构件的表面区域上方的单晶压电材料的厚度。 单晶压电材料的特征在于位错密度小于1012缺陷/ cm2。

公开(公告)号：US11881831B2

公开(公告)日：2024-01-23

申请号：US16776253

申请日：2020-01-29

申请人： Akoustis, Inc.

发明人： Shawn R. Gibb ,  Alexander Y. Feldman ,  Mark D. Boomgarden ,  Michael P. Lewis ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H03H9/10 ,  H10N30/01

CPC分类号： H03H3/02 ,  H03H9/1007 ,  H10N30/01 ,  Y10T29/42

摘要： A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.

公开(公告)号：US11646719B2

公开(公告)日：2023-05-09

申请号：US17886149

申请日：2022-08-11

申请人： AKOUSTIS, INC.

发明人： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David M. Aichele

IPC分类号： H03H9/70 ,  H03H9/02 ,  H03H9/205 ,  H03H9/58 ,  H03H9/60 ,  H03H9/54 ,  H03H3/02 ,  H03H9/00 ,  H03H9/05

CPC分类号： H03H9/703 ,  H03H3/02 ,  H03H9/0095 ,  H03H9/02031 ,  H03H9/02118 ,  H03H9/205 ,  H03H9/542 ,  H03H9/581 ,  H03H9/605 ,  H03H9/0523 ,  H03H9/0533 ,  H03H2003/023 ,  H03H2003/025

摘要： An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

公开(公告)号：US11646710B2

公开(公告)日：2023-05-09

申请号：US17865092

申请日：2022-07-14

申请人： Akoustis, Inc.

发明人： Dae Ho Kim ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H03H9/02 ,  H03H9/05

CPC分类号： H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/10513 ,  H10N30/85 ,  H10N30/875 ,  H10N30/877 ,  H10N30/88 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

摘要： A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.