公开(公告)号：US20060284271A1

公开(公告)日：2006-12-21

申请号：US11158621

申请日：2005-06-21

申请人： Brian Doyle ,  Jack Kavalieros ,  Justin Brask ,  Matthew Mertz ,  Mark Doczy ,  Suman Datta ,  Robert Chau

发明人： Brian Doyle ,  Jack Kavalieros ,  Justin Brask ,  Matthew Mertz ,  Mark Doczy ,  Suman Datta ,  Robert Chau

IPC分类号： H01L29/94

CPC分类号： H01L29/4983 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/28247 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/66628

摘要： Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer and reduced oxidation of a substrate beneath the high-k gate dielectric layer. An oxygen barrier, or capping, layer on the high-k gate dielectric layer and metal gate may prevent such oxidation during processes such as spacer formation and annealing of ion implanted regions.

公开(公告)号：US20060186484A1

公开(公告)日：2006-08-24

申请号：US11064996

申请日：2005-02-23

申请人： Robert Chau ,  Suman Datta ,  Jack Kavalieros ,  Justin Brask ,  Mark Doczy ,  Matthew Metz

发明人： Robert Chau ,  Suman Datta ,  Jack Kavalieros ,  Justin Brask ,  Mark Doczy ,  Matthew Metz

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7848 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/20 ,  H01L29/201 ,  H01L29/207 ,  H01L29/267 ,  H01L29/41783 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66522 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7836 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78681

摘要： A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.

公开(公告)号：US20060180878A1

公开(公告)日：2006-08-17

申请号：US11393151

申请日：2006-03-29

申请人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Chris Barns ,  Matthew Metz ,  Suman Datta ,  Annalisa Cappellani ,  Robert Chau

发明人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Chris Barns ,  Matthew Metz ,  Suman Datta ,  Annalisa Cappellani ,  Robert Chau

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/82345 ,  H01L21/28229 ,  H01L21/823842 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, then forming a trench within the first dielectric layer. After forming a second dielectric layer on the substrate, a first metal layer is formed within the trench on a first part of the second dielectric layer. A second metal layer is then formed on the first metal layer and on a second part of the second dielectric layer.

公开(公告)号：US20060160371A1

公开(公告)日：2006-07-20

申请号：US11037644

申请日：2005-01-18

申请人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

发明人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

IPC分类号： H01L21/31

CPC分类号： H01L21/28194 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28079 ,  H01L21/3141 ,  H01L21/31691 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

摘要： Oxidation between a higher dielectric constant material such as a rare earth oxide and a substrate may be reduced by providing a seal layer over the gate dielectric. In some embodiments, the seal layer may be isolated from the gate dielectric by a buffer layer.

摘要翻译： 通过在栅极电介质上设置密封层，可以减少较高介电常数材料如稀土氧化物与基底之间的氧化。 在一些实施例中，密封层可以通过缓冲层与栅极电介质隔离。

公开(公告)号：US20060065939A1

公开(公告)日：2006-03-30

申请号：US10951073

申请日：2004-09-27

申请人： Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Chris Barns ,  Matthew Metz ,  Suman Datta ,  Robert Chau

发明人： Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Chris Barns ,  Matthew Metz ,  Suman Datta ,  Robert Chau

IPC分类号： H01L29/94 ,  H01L21/3205

CPC分类号： H01L21/823437 ,  H01L21/823828

摘要： A complementary metal oxide semiconductor integrated circuit may be formed with NMOS and PMOS transistors that have high dielectric constant gate dielectric material over a semiconductor substrate. A metal barrier layer may be formed over the gate dielectric. A workfunction setting metal layer is formed over the metal barrier layer and a cap metal layer is formed over the workfunction setting metal layer.

摘要翻译： 互补金属氧化物半导体集成电路可以形成有在半导体衬底上具有高介电常数栅极电介质材料的NMOS和PMOS晶体管。 可以在栅极电介质上方形成金属阻挡层。 在金属阻挡层上方形成功函设定金属层，在功函设定金属层上形成帽金属层。

公开(公告)号：US20060022271A1

公开(公告)日：2006-02-02

申请号：US10900585

申请日：2004-07-28

申请人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

发明人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

IPC分类号： H01L27/01

CPC分类号： H01L21/823462 ,  H01L21/823857

摘要： Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a subtractive process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples.

公开(公告)号：US20060006522A1

公开(公告)日：2006-01-12

申请号：US10889535

申请日：2004-07-12

申请人： Mark Doczy ,  Mitchell Taylor ,  Justin Brask ,  Jack Kavalieros ,  Suman Datta ,  Matthew Metz ,  Robert Chau ,  Jack Hwang

发明人： Mark Doczy ,  Mitchell Taylor ,  Justin Brask ,  Jack Kavalieros ,  Suman Datta ,  Matthew Metz ,  Robert Chau ,  Jack Hwang

IPC分类号： H01L23/14

CPC分类号： H01L21/823842

摘要： Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type.

公开(公告)号：US20050287746A1

公开(公告)日：2005-12-29

申请号：US10877232

申请日：2004-06-24

申请人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

发明人： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L29/517 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66772

摘要： In a metal gate replacement process, a gate electrode stack may be formed of a germanium containing layer. In subsequent processing of the source/drains, high temperature steps may be utilized, forming a germinide on said stacks. That germinide may be removed, prior to removing the rest of the stack, using H2O2.

摘要翻译： 在金属栅极替换工艺中，栅电极堆叠可以由含锗层形成。 在源/下水道的后续处理中，可以利用高温步骤，在所述堆上形成发芽。 在使用H 2 O 2 O 2除去堆叠的其余部分之前，可以除去该发芽物。

公开(公告)号：US20050269644A1

公开(公告)日：2005-12-08

申请号：US10863669

申请日：2004-06-08

申请人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Brian Doyle ,  Robert Chau

发明人： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Brian Doyle ,  Robert Chau

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/76

CPC分类号： H01L29/66545 ,  H01L21/28114 ,  H01L21/823842 ,  H01L21/823857

摘要： In a metal gate replacement process, a stack of at least two polysilicon layers or other materials may be formed. Sidewall spacers may be formed on the stack. The stack may then be planarized. Next, the upper layer of the stack may be selectively removed. Then, the exposed portions of the sidewall spacers may be selectively removed. Finally, the lower portion of the stack may be removed to form a T-shaped trench which may be filled with the metal replacement.

摘要翻译： 在金属栅极更换工艺中，可以形成至少两个多晶硅层或其它材料的堆叠。 侧壁间隔物可以形成在堆叠上。 然后可以将堆叠平坦化。 接下来，可以选择性地去除堆叠的上层。 然后，可以选择性地去除侧壁间隔物的暴露部分。 最后，堆叠的下部可以被去除以形成可以用金属替代物填充的T形沟槽。

公开(公告)号：US20050266694A1

公开(公告)日：2005-12-01

申请号：US10854975

申请日：2004-05-27

申请人： Justin Brask ,  Paul Sears ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Paul Sears ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Robert Chau

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/461 ,  H01L21/8238

CPC分类号： H01L21/31111 ,  H01L21/32134 ,  H01L21/823842

摘要： A wafer may be rotated while etching to displace bubbles that may form, for example, from a reaction between silicon and water. As a result, a hydrophobic layer, which would otherwise be created by the bubbles, cannot form, resulting in a more uniform etch rate in some embodiments.

摘要翻译： 可以在蚀刻时旋转晶片以置换可能由例如硅和水之间的反应形成的气泡。 结果，在一些实施方案中，不能形成另外由气泡产生的疏水层，导致更均匀的蚀刻速率。