公开(公告)号：US20210287898A1

公开(公告)日：2021-09-16

申请号：US17197475

申请日：2021-03-10

Applicant: Applied Materials, Inc

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Yi Xu ,  Yu Lei ,  Xianmin Tang ,  Kelvin Chan ,  Alexander Jansen ,  Philip A. Kraus

IPC: H01L21/02 ,  H01L21/30

Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.

公开(公告)号：US11011676B2

公开(公告)日：2021-05-18

申请号：US15183594

申请日：2016-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC: H01L33/06 ,  H01L33/12 ,  H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/32

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

公开(公告)号：US10734235B2

公开(公告)日：2020-08-04

申请号：US16052135

申请日：2018-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Jothilingam Ramalingam ,  Thanh X. Nguyen ,  Zhiyong Wang ,  Jianxin Lei ,  Xianmin Tang

IPC: H01L21/285 ,  C23C14/18 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  H01L21/326

Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.

公开(公告)号：US10714388B2

公开(公告)日：2020-07-14

申请号：US16222630

申请日：2018-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jin Hee Park ,  Tae Hong Ha ,  Sang-Hyeob Lee ,  Thomas Jongwan Kwon ,  Jaesoo Ahn ,  Xianmin Tang ,  Er-Xuan Ping ,  Sree Kesapragada

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/48 ,  C23C16/455 ,  C23C16/04 ,  C23C16/16 ,  C23C16/18 ,  C23C16/56 ,  H01L21/67 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

公开(公告)号：US10707122B2

公开(公告)日：2020-07-07

申请号：US16140342

申请日：2018-09-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Sree Rangasai V. Kesapragada ,  Kevin Moraes ,  Srinivas Guggilla ,  He Ren ,  Mehul Naik ,  David Thompson ,  Weifeng Ye ,  Yana Cheng ,  Yong Cao ,  Xianmin Tang ,  Paul F. Ma ,  Deenesh Padhi

IPC: H01L21/768 ,  H01L21/32 ,  H01L21/02 ,  H01L21/3105

Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.

公开(公告)号：US20190287772A1

公开(公告)日：2019-09-19

申请号：US16351651

申请日：2019-03-13

Applicant: APPLIED MATERIALS, INC.

Inventor： JOUNG JOO LEE ,  Bencherki Mebarki ,  Xianmin Tang ,  KEITH MILLER ,  SREE RANGASAI KESAPRAGADA ,  Sudarsan Srinivasan

IPC: H01J37/34 ,  C23C14/54 ,  H01L21/02

Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, a method for PVD includes providing a first stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface and rotating and linearly scanning the substrate through the stream of first material to deposit the first material on all features formed on the substrate, providing a second stream of an ionized dopant species from a dopant source towards the surface of the substrate at a second non-perpendicular angle to the plane of the substrate surface, and implanting the ionized dopant species in the first material deposited only on a top portion and a portion of the first and second sidewalls of all the features on the substrate by rotating and linearly scanning the substrate via the substrate support.

公开(公告)号：US20190276929A1

公开(公告)日：2019-09-12

申请号：US16295817

申请日：2019-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Xianmin Tang

IPC: C23C14/50 ,  H01L21/02 ,  C23C14/35 ,  H01J37/34 ,  C23C14/54

Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, an apparatus includes a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support for supporting the substrate at a non-perpendicular angle to the linear PVD source, and wherein the substrate support and linear PVD source are movable with respect to each other either along a plane of the support surface, or along an axis that is perpendicular to the plane of the support surface, sufficiently to cause the stream of material flux to move completely over a surface of the substrate disposed on the substrate support during operation, wherein the substrate support moves on at least one of a linear slide or shaft that is supported by and travels through a gas-cushioned bearing having an inert gas as a cushioning gas.

公开(公告)号：US10388532B2

公开(公告)日：2019-08-20

申请号：US15718412

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Jothilingam Ramalingam ,  Ross Marshall ,  Jianxin Lei ,  Xianmin Tang

IPC: H01L21/285 ,  H01L29/49 ,  H01L21/02 ,  H01L29/66 ,  H01L21/786 ,  H01L29/78 ,  C23C14/14 ,  C23C14/58 ,  C23C14/50 ,  C23C14/34 ,  H01L21/768 ,  C23C14/18 ,  C23C14/35 ,  H01L21/683

Abstract: Ruthenium containing gate stacks and methods of forming ruthenium containing gate stacks are described. The ruthenium containing gate stack comprises a polysilicon layer on a substrate; a silicide layer on the polysilicon layer; a barrier layer on the silicide layer; a ruthenium layer on the barrier layer; and a spacer layer comprising a nitride on sides of the ruthenium layer, wherein the ruthenium layer comprises substantially no ruthenium nitride after formation of the spacer layer. Forming the ruthenium layer comprises sputtering the ruthenium in a krypton environment on a high current electrostatic chuck comprising a high resistivity ceramic material. The sputtered ruthenium layer is annealed at a temperature greater than or equal to about 500° C.

公开(公告)号：US20190212656A1

公开(公告)日：2019-07-11

申请号：US16244381

申请日：2019-01-10

Applicant: Applied Materials, Inc. ,  International Business Machines Corporation

Inventor： Huixiong Dai ,  Weimin Zeng ,  Daniel Lee Diehl ,  Yong Cao ,  Hsiang Ning Wu ,  Khoi Phan ,  Christopher S. Ngai ,  Mingwei Zhu ,  Michael Stolfi ,  Nelson M. Felix ,  Ekmini Anuja DeSilva ,  Xianmin Tang

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70058 ,  G03F7/0035 ,  G03F7/2022 ,  G03F7/70033

Abstract: Methods for depositing an EUV hardmask film on a substrate by physical vapor deposition which allow for reduced EUV dose. Certain embodiments relate to metal oxide hardmasks which require smaller amounts of EUV energy for processing and allow for higher throughput. A silicon or metal target can be sputtered onto a substrate in the presence of an oxygen and or doping gas containing plasma.

公开(公告)号：US10283345B2

公开(公告)日：2019-05-07

申请号：US15280161

申请日：2016-09-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin Xie ,  Feng Q. Liu ,  Daping Yao ,  Alexander Jansen ,  Joung Joo Lee ,  Adolph Miller Allen ,  Xianmin Tang ,  Mei Chang

IPC: B08B7/00 ,  H01L21/02 ,  H01L21/768 ,  B08B5/00 ,  B08B9/027 ,  B08B3/00 ,  B08B9/00 ,  B08B3/10 ,  C23G1/24 ,  F01D5/00

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.