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公开(公告)号：US20070126026A1
公开(公告)日：2007-06-07
申请号：US11593016
申请日：2006-11-06
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L23/3732 , H01L29/2003 , H01L29/66462 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first group-III nitride semiconductor layer formed on a substrate; a second group-III nitride semiconductor layer made of a single layer or two or more layers, formed on the first group-III nitride semiconductor layer, and acting as a barrier layer; a source electrode, a drain electrode, and a gate electrode formed on the second group-III nitride semiconductor layer, the gate electrode controlling a current flowing between the source and drain electrodes; and a heat radiation film with high thermal conductivity which covers, as a surface passivation film, the entire surface other than a bonding pad.
摘要翻译： 半导体器件包括：形成在衬底上的第一III族氮化物半导体层; 形成在第一III族氮化物半导体层上并且用作阻挡层的由单层或两层或更多层制成的第二III族氮化物半导体层; 形成在所述第二III族氮化物半导体层上的源电极，漏电极和栅极，所述栅电极控制在所述源极和漏极之间流动的电流; 以及具有高导热性的热辐射膜，其覆盖除了焊盘之外的整个表面作为表面钝化膜。
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公开(公告)号：US20060197175A1
公开(公告)日：2006-09-07
申请号：US11363947
申请日：2006-03-01
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/7787 , H01L29/872
摘要： A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.
摘要翻译： 半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上彼此间隔开的肖特基电极和欧姆电极以及形成为覆盖第一半导体层的第二半导体层 肖特基电极和欧姆电极暴露。 第二半导体层具有比第一半导体层更大的带隙。
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公开(公告)号：US20060108659A1
公开(公告)日：2006-05-25
申请号：US11272878
申请日：2005-11-15
IPC分类号： H01L31/07
CPC分类号： H01L29/872 , H01L21/26506 , H01L27/0605 , H01L27/0814 , H01L29/0692 , H01L29/417 , H01L29/66143
摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer, and a back face electrode is formed on the back face of the semiconductor substrate. The Schottky electrode or the ohmic electrode is electrically connected to the back face electrode through a via penetrating through at least the buffer layer.
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公开(公告)号：US20050205892A1
公开(公告)日：2005-09-22
申请号：US11081622
申请日：2005-03-17
申请人： Manabu Yanagihara , Daisuke Ueda
发明人： Manabu Yanagihara , Daisuke Ueda
IPC分类号： H01L21/338 , H01L29/732 , H01L29/812
CPC分类号： H01L29/66871 , H01L29/812
摘要： The semiconductor device of the present invention includes a device formation region formed on a substrate and including at least one semiconductor region, and a first electrode and a second electrode formed spaced apart from each other on the device formation region. A semi-insulating film is formed to cover the surface of a portion of the semiconductor region, which portion is located between the first and second electrodes and in which portion a depletion layer extends when a reverse bias is applied between the first and second electrodes.
摘要翻译： 本发明的半导体器件包括形成在衬底上并且包括至少一个半导体区域的器件形成区域，以及在器件形成区域上彼此间隔开形成的第一电极和第二电极。 形成半绝缘膜以覆盖半导体区域的一部分的表面，该部分位于第一和第二电极之间，并且当在第一和第二电极之间施加反向偏压时耗尽层延伸。
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公开(公告)号：US06677625B2
公开(公告)日：2004-01-13
申请号：US09741032
申请日：2000-12-21
IPC分类号： H01L31072
CPC分类号： H01L29/66318 , H01L29/0692 , H01L29/0817 , H01L29/7371
摘要： The invention provides a bipolar transistor attaining large MSG and a method of fabricating the same. The bipolar transistor of this invention includes a collector layer; abase layer deposited on the collector layer; and a semiconductor layer deposited on the base layer in the shape of a ring along the outer circumference of the base layer, the semiconductor layer includes a ring-shaped emitter region functioning as an emitter, and the outer edge of the emitter region and the outer edge of the base layer are disposed in substantially the same plane position.
摘要翻译： 本发明提供了获得大的MSG的双极晶体管及其制造方法。 本发明的双极晶体管包括集电极层; 沉积在沉积层上; 以及沿着基底层的外周在基底层上沉积成环形的半导体层，该半导体层包括用作发射极的环形发射极区域，发射极区域和外部区域的外边缘 基层的边缘设置在基本上相同的平面位置。
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公开(公告)号：US06407617B1
公开(公告)日：2002-06-18
申请号：US09714131
申请日：2000-11-17
IPC分类号： H03K301
摘要： The invention provides a bias circuit for suppressing change with temperature of an idle current of a power transistor and a semiconductor device including the bias circuit. The bias circuit includes a first bipolar transistor having an emitter, a base and a collector, and at least one Schottky diode connected to the base of the first bipolar transistor, and the at least one Schottky diode is provided for supplying a base potential for suppressing a collector current of the first bipolar transistor from changing in accordance with temperature change.
摘要翻译： 本发明提供一种用于抑制功率晶体管的空载电流随温度变化的偏置电路和包括该偏置电路的半导体器件。 偏置电路包括具有发射极，基极和集电极的第一双极晶体管和连接到第一双极晶体管的基极的至少一个肖特基二极管，并且提供至少一个肖特基二极管以提供用于抑制的基极电位 第一双极晶体管的集电极电流根据温度变化而变化。
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公开(公告)号：US08344463B2
公开(公告)日：2013-01-01
申请号：US12681567
申请日：2009-07-10
IPC分类号： H01L27/88
CPC分类号： H01L27/088 , H01L23/481 , H01L23/4824 , H01L29/0692 , H01L29/1608 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/475 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15, a first gate electrode 17, a second gate electrode 18, and a second ohmic electrode 16. The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first gate electrode pad 43. The second gate electrodes 18 are electrically connected via a second interconnection 32 to a second gate electrode pad 44. A unit cell 11 including a first gate electrode 17 having the shortest interconnect distance from the first gate electrode pad 43 includes a second gate electrode 18 having the shortest interconnect distance from the second gate electrode pad 44.
摘要翻译： 双向开关包括多个单元电池11，其包括第一欧姆电极15，第一栅极电极17，第二栅极电极18和第二欧姆电极16.第一栅电极15经由第一互连线31电连接到 第一栅极电极焊盘43.第二栅电极18经由第二互连32电连接到第二栅极电极焊盘44.单元电池11包括与第一栅电极焊盘43的布线距离最短的第一栅电极17 包括与第二栅电极焊盘44的互连距离最短的第二栅电极18。
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公开(公告)号：US20110049574A1
公开(公告)日：2011-03-03
申请号：US12917994
申请日：2010-11-02
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/452
摘要： A semiconductor device includes a first group III-V nitride semiconductor layer, a second group III-V nitride semiconductor layer having a larger band gap than the first group III-V nitride semiconductor layer and at least one ohmic electrode successively formed on a substrate. The ohmic electrode is formed so as to have a base portion penetrating the second group III-V nitride semiconductor layer and reaching a portion of the first group III-V nitride semiconductor layer disposed beneath a two-dimensional electron gas layer. An impurity doped layer is formed in portions of the first group III-V nitride semiconductor layer and the second group III-V nitride semiconductor layer in contact with the ohmic electrode.
摘要翻译： 半导体器件包括第一III-V族氮化物半导体层，具有比第一III-V族氮化物半导体层更大的带隙的第二III-V族氮化物半导体层和在衬底上依次形成的至少一个欧姆电极。 欧姆电极形成为具有穿透第二III-V族氮化物半导体层并且到达设置在二维电子气体层下方的第一III-V族氮化物半导体层的一部分的基极部分。 在与欧姆电极接触的第一III-V族氮化物半导体层和第二III-V族氮化物半导体层的部分中形成杂质掺杂层。
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公开(公告)号：US20080303162A1
公开(公告)日：2008-12-11
申请号：US12100245
申请日：2008-04-09
IPC分类号： H01L23/48
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/2003 , H01L29/402 , H01L29/405 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a layered structure including a first nitride semiconductor layer and a second nitride semiconductor layer that are sequentially formed over a substrate in this order. The second nitride semiconductor layer has a wider bandgap than the first nitride semiconductor layer. A first electrode and a second electrode are formed spaced apart from each other on the layered structure. A first insulating layer with a high breakdown field is formed in a region with electric field concentration between the first electrode and the second electrode over the layered structure. The first insulating layer has a higher breakdown field than air.
摘要翻译： 半导体器件包括依次形成在衬底上的第一氮化物半导体层和第二氮化物半导体层的层状结构。 第二氮化物半导体层具有比第一氮化物半导体层更宽的带隙。 第一电极和第二电极在分层结构上彼此间隔开形成。 在分层结构上，在第一电极和第二电极之间的电场浓度的区域中形成具有高击穿电场的第一绝缘层。 第一绝缘层具有比空气更高的击穿场。
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公开(公告)号：US07332754B2
公开(公告)日：2008-02-19
申请号：US11022814
申请日：2004-12-28
IPC分类号： H01L29/80
CPC分类号： H01L27/1203 , H01L29/8126
摘要： In the semiconductor switch of the present invention, the gate electrode, source electrode and drain electrode are formed such that the distance between the gate and the drain of an MESFET, assuming a shunt FET, is longer than the distance between the gate and the drain of an MESFET, assuming a through FET, so that the gate breakdown voltage of the MESFET, assuming a shunt FET, is increased without changing the gate breakdown voltage of the MESFET, assuming a through FET.
摘要翻译： 在本发明的半导体开关中，栅电极，源电极和漏极形成为使得MESFET的栅极和漏极之间的距离（假设分流FET）比栅极和漏极之间的距离长 假定通过FET，MESFET的假定为通过FET的MESFET的栅极击穿电压在不改变MESFET的栅极击穿电压的情况下增加，并且假定为通过FET，所以增加了MESFET的栅极击穿电压。
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