公开(公告)号：US09671223B2

公开(公告)日：2017-06-06

申请号：US13807281

申请日：2011-05-20

申请人： Chie Shishido ,  Maki Tanaka ,  Katsuhiro Sasada

发明人： Chie Shishido ,  Maki Tanaka ,  Katsuhiro Sasada

IPC分类号： G01B15/04 ,  G01Q40/00 ,  H01J37/26 ,  H01J37/28

CPC分类号： G01B15/04 ,  G01Q40/00 ,  H01J37/263 ,  H01J37/28 ,  H01J2237/22 ,  H01J2237/24514 ,  H01J2237/24578 ,  H01J2237/2823 ,  H01J2237/2826

摘要： Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.

公开(公告)号：US20120128230A1

公开(公告)日：2012-05-24

申请号：US13362151

申请日：2012-01-31

申请人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

发明人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G01N21/9501 ,  G01N21/95607 ,  G06T7/0004 ,  G06T2207/30148

摘要： An inspection method, including: illuminating a light on a wafer on which plural chips having identical patterns are formed; imaging corresponding areas of two chips formed on the wafer to obtain inspection images and reference images with an image sensor; and processing the obtained inspection image and the reference image to produce a difference image which indicates a difference between the inspection image and the reference image and detect a defect by comparing the difference image with a threshold, wherein a threshold applied to a difference image which is produced by comparing the inspection image and the reference image obtained by imaging peripheral portion of the wafer is different from a threshold applied to a difference image which is produced by comparing the inspection image and the reference image obtained by imaging central portion of the wafer.

摘要翻译： 一种检查方法，包括：在其上形成有多个具有相同图案的芯片的晶片上照射光; 对形成在晶片上的两个芯片的对应区域进行成像，以获得具有图像传感器的检查图像和参考图像; 并且处理所获得的检查图像和参考图像以产生指示检查图像和参考图像之间的差异的差异图像，并且通过将差异图像与阈值进行比较来检测缺陷，其中应用于差分图像的阈值是 通过比较检查图像和通过对晶片的周边部分进行成像获得的参考图像而产生的参考图像与通过比较检查图像和通过对晶片的中心部分进行成像而获得的参考图像而产生的差分图像的阈值不同。

公开(公告)号：US08045789B2

公开(公告)日：2011-10-25

申请号：US12350260

申请日：2009-01-08

申请人： Tomofumi Nishiura ,  Atsushi Miyamoto ,  Chie Shishido ,  Takumichi Sutani

发明人： Tomofumi Nishiura ,  Atsushi Miyamoto ,  Chie Shishido ,  Takumichi Sutani

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06K9/6255 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the inspection apparatus for a defect of a semiconductor and the method using it for automatically detecting the defect on a semiconductor wafer and presuming the defect occurrence factor using the circuit design data, a plurality of shapes are formed from the circuit design data by deforming the design data with respect to shape deformation items stipulated for respective defect occurrence factor for comparison with the inspection object circuit pattern. The defect is detected by comparison of the group of shapes formed and the actual pattern. Further, the occurrence factors of these defects are presumed, and the defects are classified according to respective factor.

摘要翻译： 在半导体缺陷检查装置及其自动检测半导体晶片上的缺陷的方法中，使用电路设计数据设定缺陷发生因子，通过使电路设计数据变形来形成多个形状 相对于与检查对象电路图案进行比较的各个缺陷发生因子规定的形状变形项目的设计数据。 通过比较形成的形状组和实际图案来检测缺陷。 此外，推测出这些缺陷的发生因素，根据各自的因素对缺陷进行分类。

公开(公告)号：US07732761B2

公开(公告)日：2010-06-08

申请号：US11673057

申请日：2007-02-09

申请人： Maki Tanaka ,  Chie Shishido

发明人： Maki Tanaka ,  Chie Shishido

IPC分类号： G06F7/60 ,  G06F17/10 ,  G06F17/50 ,  G06G7/48 ,  G01N23/00 ,  G21K7/00 ,  G06G7/62

CPC分类号： G01N23/2251 ,  G01N2223/6116 ,  H01J2237/24578

摘要： To provide a consistent, high-speed, high-precision measurement method based on an electron beam simulation by reflecting the apparatus characteristics of a CD-SEM in an electron beam simulation, the present invention discloses a method for measuring a measurement target pattern with a CD-SEM, the method comprising the steps of performing an electron beam simulation on various target pattern shapes, which is reflected apparatus characteristic and image acquisition conditions; creating SEM simulated waveforms; storing a combination of the created SEM simulated waveforms and pattern shape information corresponding to the created SEM simulated waveforms as a library; comparing an acquired actual electron microscope image with the SEM simulated waveforms; selecting the SEM simulated waveform that is most similar to the actual electron microscope image; and estimating the shape of the measurement target pattern from the pattern shape information corresponding to the selected SEM simulated waveform.

摘要翻译： 为了通过在电子束模拟中反映CD-SEM的装置特性，基于电子束模拟提供一致的，高速，高精度的测量方法，本发明公开了一种测量目标图案的方法， CD-SEM，该方法包括以下步骤：对各种目标图案形状进行电子束模拟，反射装置特性和图像采集条件; 创建SEM模拟波形; 存储所创建的SEM模拟波形的组合和对应于所创建的SEM模拟波形的图案形状信息作为库; 将获得的实际电子显微镜图像与SEM模拟波形进行比较; 选择与实际电子显微镜图像最相似的SEM模拟波形; 以及根据与选择的SEM模拟波形对应的图案形状信息来估计测量对象图案的形状。

公开(公告)号：US07685560B2

公开(公告)日：2010-03-23

申请号：US10988558

申请日：2004-11-16

申请人： Wataru Nagatomo ,  Chie Shishido ,  Hidetoshi Morokuma

发明人： Wataru Nagatomo ,  Chie Shishido ,  Hidetoshi Morokuma

IPC分类号： G06F17/50 ,  G06K9/00 ,  G06F19/00

CPC分类号： G03F7/705 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

摘要： An exposure process monitoring method capable of performing quantitative monitoring of an exposure amount and a focusing position which are major process parameters during exposure using a Levinson phase shift mask in semiconductor lithography processes is disclosed. During exposure using the Levinson phase shift mask, the focus position is influenceable by optical intensity distribution characteristics so that it can vary from its minus (−) to plus (+) directions by in a way depending upon the pitch width and line width of a line-and-space pattern. In such case, there exist a pattern in which the cross-sectional shape of a resist changes from a forward taper to reverse taper and a pattern in which the sectional shape changes from the reverse to forward taper.

摘要翻译： 公开了一种在半导体光刻工艺中能够使用利文森相移掩模在曝光期间对作为主要工艺参数的曝光量和聚焦位置进行定量监测的曝光过程监控方法。 在使用莱文森相移掩模的曝光期间，聚焦位置可以通过光强度分布特性来影响，使得它可以通过取决于音调宽度和线宽度的方式从它的负（ - ）到+（+）方向变化 线和空间模式。 在这种情况下，存在其中抗蚀剂的横截面形状从正向锥形变成反向锥形的图案，以及截面形状从反向变化到向前锥度的图案。

公开(公告)号：US07633061B2

公开(公告)日：2009-12-15

申请号：US12034696

申请日：2008-02-21

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

IPC分类号： H01J37/256 ,  G01B15/00 ,  G03F9/00

CPC分类号： G01B15/04 ,  G01N23/225 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.

摘要翻译： 对电子束照射的电阻低的材料难以得到S / N比高的电子显微镜像。 常规的图像平滑处理可以提高测量的稳定性，但是该过程存在绝对值的测量误差，灵敏度的降低，立方体信息的质量劣化等的问题。 在本发明中，考虑到测定对象图案的尺寸偏差，通过进行图像平均化处理而不劣化信号波形的立方体信息，测量稳定性与精度和灵敏度的提高相一致。 因此，可以高精度地实现图案尺寸和形状的测量，并且可以使用该测量来控制高灵敏度的半导体制造工艺。

公开(公告)号：US07274813B2

公开(公告)日：2007-09-25

申请号：US11204181

申请日：2005-08-16

申请人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

发明人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G01N21/9501 ,  G01N21/95607 ,  G06T7/0004 ,  G06T2207/30148

摘要： A method of inspecting defects of a plurality of patterns that are formed on a substrate to have naturally the same shape. According to this method, in order to detect very small defects of the patterns with high sensitivity without being affected by irregular brightness due to the thickness difference between the patterns formed on a semiconductor wafer, a first pattern being inspected is detected to produce a first image of the first pattern, the first image is stored, a second pattern being inspected is detected to produce a second image of said second pattern, the stored first image and the second image are matched in brightness, and the brightness-matched first and second images are compared with each other so that the patterns can be inspected.

摘要翻译： 检查在基板上形成的具有自然相同形状的多个图案的缺陷的方法。 根据该方法，为了以高灵敏度检测图案的非常小的缺陷，不受由于在半导体晶片上形成的图案之间的厚度差而引起的不规则亮度的影响，检测出被检查的第一图案以产生第一图像 第一图案被存储，检测出被检查的第二图案以产生所述第二图案的第二图像，所存储的第一图像和第二图像的亮度相匹配，并且亮度匹配的第一和第二图像 彼此进行比较，从而可以检查图案。

公开(公告)号：US07230243B2

公开(公告)日：2007-06-12

申请号：US11156478

申请日：2005-06-21

申请人： Maki Tanaka ,  Atsushi Miyamoto ,  Hidetoshi Morokuma ,  Chie Shishido ,  Mitsuji Ikeda ,  Yasutaka Toyoda

发明人： Maki Tanaka ,  Atsushi Miyamoto ,  Hidetoshi Morokuma ,  Chie Shishido ,  Mitsuji Ikeda ,  Yasutaka Toyoda

IPC分类号： H01J37/28 ,  G01N23/00 ,  G21K7/00 ,  G06K9/00

CPC分类号： H01J37/28 ,  H01J2237/2814

摘要： The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction φ(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.

摘要翻译： 本发明涉及一种用于使用SEM测量三维轮廓的方法和装置，其能够基于二次侧的量的倾斜角度依赖性精确地测量均匀的平面或几乎垂直的表面的三维轮廓 电子图像信号由SEM检测。 具体地说，倾斜图像获取单元通过使用从观察方向phi入射到图案上的电子束来获得待测图案上的平坦区域a和c 1的倾斜图像（倾斜二次电子图像）I（2） 2）。 然后，轮廓测量单元基于所获得的倾斜图像来假设在图案上的每个点处的斜率（或表面倾斜角），并且连续地积分每个假设的斜率值（或表面倾斜角值），以测量三维轮廓S 2a和 S 2 c。 这种布置允许精确地测量三维轮廓。

公开(公告)号：US20050263703A1

公开(公告)日：2005-12-01

申请号：US11176344

申请日：2005-07-08

申请人： Takashi Hiroi ,  Asahiro Kuni ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroyuki Shinada ,  Yasuhiro Gunji ,  Atsuko Takafuji

发明人： Takashi Hiroi ,  Asahiro Kuni ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroyuki Shinada ,  Yasuhiro Gunji ,  Atsuko Takafuji

IPC分类号： G01N23/04 ,  G01N23/20 ,  G01N23/225 ,  G01Q30/04 ,  G02F1/13 ,  G06T1/00 ,  G21K7/00 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28

CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/24465 ,  H01J2237/2817

摘要： A pattern inspection method and apparatus in which a charged particle beam is irradiated onto a surface of a specimen on which a pattern is formed, plural sensors simultaneously detect secondary particles emanated from the surface of the specimen by the irradiation, signals outputted from each sensor of the plural sensors which simultaneously detect the secondary particles are added, an image of the surface of the specimen on which the pattern is obtained from the added signals, and the image is processed to detect a defect of the pattern.

摘要翻译： 一种图案检查方法和装置，其中带电粒子束照射到形成有图案的样本的表面上，多个传感器同时检测通过照射从样品表面发出的二次颗粒，从每个传感器输出的信号 添加同时检测二次粒子的多个传感器，从附加的信号中添加从其获得图案的样本的表面的图像，并且处理图像以检测图案的缺陷。

公开(公告)号：US06841403B2

公开(公告)日：2005-01-11

申请号：US10348747

申请日：2003-01-21

申请人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

发明人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

IPC分类号： H01L21/00 ,  H01L21/66 ,  G06F19/00

CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

摘要翻译： 本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置，使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备，采取补救措施，以及 实现恒定和高收益。 本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性，分析评估的相似性的数据序列的循环性，评估从 根据制造线上每个制造设备的分析和处理方法，并推断或确定引起缺陷的因果过程和设备。