利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

102 条记录 (耗时 0.045 秒)

    Variable antenna apparatus for a mobile terminal
    72.
    发明申请
    Variable antenna apparatus for a mobile terminal 有权
    用于移动终端的可变天线装置

    公开(公告)号：US20050237242A1

    公开(公告)日：2005-10-27

    申请号：US10946819

    申请日：2004-09-22

    申请人： Dong-Hwan Kim ,  Byung-Duck Cho ,  Wan-Jin Choi

    发明人： Dong-Hwan Kim ,  Byung-Duck Cho ,  Wan-Jin Choi

    IPC分类号： H01Q1/24 ,  H01Q9/04

    CPC分类号： H01Q1/244 ,  H01Q1/084 ,  H01Q9/0421

    摘要： A variable antenna apparatus for a mobile terminal. The variable antenna apparatus includes a radiation component that is rotatably coupled with the mobile terminal, a feeding component that is adjacent to a first end part of the radiation component and electrically connected to a radio frequency board of the mobile terminal. A grounding component is adjacent to the first end part of the radiation component and selectively connected to a ground of the radio frequency board as the radiation component is rotated. The antenna apparatus is accommodated in a terminal so that it is possible to conveniently carry the terminal, and the antenna is rotatably protruded from the terminal during a telephone call, such that appropriate antenna gain is achieved.

    摘要翻译： 一种用于移动终端的可变天线装置。 可变天线装置包括与移动终端可旋转地联接的辐射部件，与辐射部件的第一端部部分相邻并与移动终端的射频板电连接的馈电部件。 接地部件与辐射部件的第一端部相邻，并随着辐射部件旋转而选择性地连接到射频板的接地。 天线装置被容纳在终端中，使得可以方便地携带终端，并且在电话呼叫期间天线从终端可旋转地突出，使得实现适当的天线增益。

    Flash memory device having multi-level cell and reading and programming method thereof
    73.
    发明申请
    Flash memory device having multi-level cell and reading and programming method thereof 有权
    具有多电平单元的闪存器件及其读取和编程方法

    公开(公告)号：US20050018488A1

    公开(公告)日：2005-01-27

    申请号：US10888944

    申请日：2004-07-08

    申请人： Dong-Hwan Kim ,  Yeong-Taek Lee

    发明人： Dong-Hwan Kim ,  Yeong-Taek Lee

    IPC分类号： G11C16/06 ,  G11C11/56 ,  G11C16/02 ,  G11C16/04 ,  G11C16/30 ,  G11C11/34

    CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/24 ,  G11C16/26 ,  G11C16/32 ,  G11C16/3459 ,  G11C2211/5642

    摘要： There is provided a flash memory device with multi-level cell and a reading and programming method thereof. The flash memory device with multi-level cell includes a memory cell array, a unit for precharging bit line, a bit line voltage supply circuit for supplying a voltage to the bit line, and first to third latch circuits each of which performs different function from each other. The reading and programming methods are performed by LSB and MSB reading and programming operations. A reading method in the memory device is achieved by reading an LSB two times and by reading an MSB one time. A programming method is achieved by programming an LSB one time and programming an MSB one time. Data having multi-levels can be programmed into memory cells by two times programming operations.

    摘要翻译： 提供了一种具有多电平单元的闪存器件及其读取和编程方法。 具有多电平单元的闪速存储器件包括存储单元阵列，用于对位线进行预充电的单元，用于向位线提供电压的位线电压供应电路，以及每一个执行与位线不同的功能的第一至第三锁存电路 彼此。 读取和编程方法由LSB和MSB读取和编程操作执行。 通过读取LSB两次并通过读取MSB一次来实现存储器件中的读取方法。 通过编程LSB一次并编程MSB一次来实现编程方法。 具有多级数据的数据可以通过两次编程操作被编程到存储器单元中。

    Method for manufacturing semiconductor memory device using hemispherical grain silicon
    74.
    发明授权
    Method for manufacturing semiconductor memory device using hemispherical grain silicon 有权
    使用半球晶硅制造半导体存储器件的方法

    公开(公告)号：US06723601B2

    公开(公告)日：2004-04-20

    申请号：US10321815

    申请日：2002-12-18

    申请人： Se-Min Lee ,  Dong-Hwan Kim ,  Keun-Il Lee

    发明人： Se-Min Lee ,  Dong-Hwan Kim ,  Keun-Il Lee

    IPC分类号： H01L218242

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/84 ,  Y10S257/905

    摘要： A semiconductor device for use in a memory cell including an active matrix provided with a silicon substrate, at least one transistor formed on the silicon substrate, a number of bottom electrodes formed over the transistors, a plurality of conductive plugs to electrically connect the bottom electrodes to the transistors, respectively, and an insulating layer formed around the conductive plugs. In the device, by carrying out a carbon treatment to top surface portions of the bottom electrode structure, it is possible to secure enough space to prevent the formation of bridges between the bottom electrodes.

    摘要翻译： 一种用于存储单元的半导体器件，包括设置有硅衬底的有源矩阵，形成在硅衬底上的至少一个晶体管，形成在晶体管上方的多个底部电极，多个导电插头，用于电连接底部电极 并分别形成在导电插塞周围形成的绝缘层。 在该装置中，通过对底部电极结构的顶面部分进行碳处理，可以确保足够的空间以防止在底部电极之间形成桥。

    Multi-state nonvolatile semiconductor memory device which is capable of regularly maintaining a margin between threshold voltage distributions
    76.
    发明授权
    Multi-state nonvolatile semiconductor memory device which is capable of regularly maintaining a margin between threshold voltage distributions 有权
    能够有规律地保持阈值电压分布之间的裕度的多态非易失性半导体存储器件

    公开(公告)号：US06411551B1

    公开(公告)日：2002-06-25

    申请号：US09703190

    申请日：2000-10-31

    申请人： Dong-Hwan Kim ,  Seok-Cheon Kwon

    发明人： Dong-Hwan Kim ,  Seok-Cheon Kwon

    IPC分类号： G11C1134

    CPC分类号： G11C11/5621 ,  G11C11/5628 ,  G11C16/10 ,  G11C2211/5642

    摘要： A nonvolatile semiconductor memory device of the present invention has an array that includes a bit line, a plurality of word lines arranged perpendicularly to the bit line and a plurality of memory cells each arranged at intersections of the bit line and the word lines. In the nonvolatile semiconductor memory device is further provided a storage circuit and a program data judging circuit. The storage circuit has at least two latches each of which is connected to a corresponding input/output line and latches data. The program data judging circuit judges whether logic states of data latched in the latches indicate a programming or a program-inhibition of a selected memory cell, and sets the bit line to a program voltage or a program inhibition voltage according to a judgment result.

    摘要翻译： 本发明的非易失性半导体存储器件具有包括位线，与位线垂直排列的多个字线的阵列和分别位于位线和字线的交点处的多个存储单元。 在非易失性半导体存储器件中还提供有存储电路和程序数据判断电路。 存储电路具有至少两个锁存器，每个锁存器连接到相应的输入/输出线并锁存数据。 程序数据判断电路判断锁存器中锁存的数据的逻辑状态是否表示所选存储单元的编程或编程禁止，并根据判断结果将位线设置为编程电压或编程禁止电压。

    Power supply apparatus for portable computer and DC input selection circuit adapted to the same
    78.
    发明授权
    Power supply apparatus for portable computer and DC input selection circuit adapted to the same 失效
    用于便携式计算机的电源设备和适合于其的DC输入选择电路

    公开(公告)号：US5886424A

    公开(公告)日：1999-03-23

    申请号：US891363

    申请日：1997-07-10

    申请人： Dong-Hwan Kim

    发明人： Dong-Hwan Kim

    IPC分类号： G06F1/16 ,  G06F1/26 ,  H05K10/00

    CPC分类号： G06F1/1632 ,  G06F1/263 ,  Y10T307/344 ,  Y10T307/615

    摘要： Disclosed is a power supply apparatus which permits a docking station to be operated with a battery power from a battery pack of a portable computer even if supply of AC power to the docking station is accidentally cut off. The apparatus for a portable computer system for use with a docking station having a logic circuit for expanding functions of the portable computer comprises a DC input selection circuit placed on the portable computer side, for switching between the first and second DC voltages to provide a switched DC voltage to the portable computer as well as the docking station, so that the docking station is operated with the second DC power source even though supply of AC power to the docking station is cut off.

    摘要翻译： 公开了一种供电装置，即使意外切断对对接站的AC电力的供给，也可以使用来自便携式计算机的电池组的电池电力来操作对接站。 用于与具有扩展便携式计算机的功能的逻辑电路的对接站一起使用的便携式计算机系统的装置包括放置在便携式计算机侧上的DC输入选择电路，用于在第一和第二DC电压之间切换以提供开关 直流电压到便携式计算机以及对接站，使得对接站与第二DC电源一起操作，即使向对接站的AC电力的供应被切断。

    Thin film transistor and method of manufacturing the same
    79.
    发明授权
    Thin film transistor and method of manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US09231222B2

    公开(公告)日：2016-01-05

    申请号：US13584938

    申请日：2012-08-14

    申请人： Woo-Yong Sung ,  Dong-Hwan Kim ,  Jeong-Ho Lee ,  Tae-Woon Cha ,  Sang-Gun Choi

    发明人： Woo-Yong Sung ,  Dong-Hwan Kim ,  Jeong-Ho Lee ,  Tae-Woon Cha ,  Sang-Gun Choi

    IPC分类号： H01L29/78 ,  H01L21/441 ,  H01L51/05

    CPC分类号： H01L51/0541

    摘要： A thin film transistor (“TFT”) includes a gate electrode, a gate insulating layer, a source electrode, a drain electrode and a semiconductor layer. The gate insulating layer is disposed on the gate electrode. The source electrode is disposed on the gate insulating layer. The drain electrode is disposed on the gate insulating layer. The drain electrode is spaced apart from the source electrode. The semiconductor layer is disposed on the gate insulating layer. The semiconductor layer makes contact with a side surface of the source electrode and a side surface of the drain electrode.

    摘要翻译： 薄膜晶体管（“TFT”）包括栅电极，栅极绝缘层，源电极，漏电极和半导体层。 栅极绝缘层设置在栅电极上。 源电极设置在栅极绝缘层上。 漏电极设置在栅极绝缘层上。 漏电极与源电极间隔开。 半导体层设置在栅极绝缘层上。 半导体层与源电极的侧面和漏电极的侧面接触。