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254 条记录 (耗时 0.048 秒)

    Treatment of supercritical fluid utilized in semiconductor manufacturing applications
    71.
    发明授权
    Treatment of supercritical fluid utilized in semiconductor manufacturing applications 失效
    半导体制造应用中超临界流体的处理

    公开(公告)号：US06735978B1

    公开(公告)日：2004-05-18

    申请号：US10364558

    申请日：2003-02-11

    申请人： Glenn M. Tom ,  Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

    发明人： Glenn M. Tom ,  Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

    IPC分类号： F25D100

    CPC分类号： C01B32/50 ,  Y02P20/544

    摘要： A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.

    摘要翻译： 一种用于利用和处置超临界流体组合物的系统和方法，其中超临界流体（SCF）组合物在诸如半导体制造厂的SCF使用过程设备中使用。 超临界流体组合物从处理设备中取出，其中含有至少一种相对于超临界流体组合物的进一步处置是无关的组分。 将取出的超临界流体组合物转化为加压液体，其被处理以至少部分地从其中除去外来成分。 在其进一步的处置中，去除加压液体的外来成分可以再转化为超临界状态，以再循环至使用SCF的工艺设备，或者在超临界流体如CO2的情况下，可将其气化并排放到大气中 。

    Pyrazolate copper complexes, and MOCVD of copper using same
    75.
    发明授权
    Pyrazolate copper complexes, and MOCVD of copper using same 失效
    吡唑铜络合物和铜的MOCVD使用相同

    公开(公告)号：US06417369B1

    公开(公告)日：2002-07-09

    申请号：US09524063

    申请日：2000-03-13

    申请人： Chongying Xu ,  Thomas H. Baum ,  Ziyun Wang

    发明人： Chongying Xu ,  Thomas H. Baum ,  Ziyun Wang

    IPC分类号： C07F108

    CPC分类号： C23C16/18 ,  C07F1/08 ,  C07F7/0803

    摘要： Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.

    摘要翻译： 用于在半导体集成电路中形成铜的吡唑类前体组合物，例如半导体器件结构中的互连金属化，作为用于电镀的粘合种子层，用于沉积薄膜记录头并用于封装部件的电路化。 吡唑铜前体组合物包括氟化和非氟化的吡唑盐铜（I）络合物及其路易斯碱加合物。 这种前体有利地用于在基底上的铜或含铜材料的液体输送化学气相沉积。

    Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films
    76.
    发明授权
    Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films 失效
    用于化学气相沉积形成的源试剂组合物和方法或ZR / HF硅酸盐栅极电介质薄膜

    公开(公告)号：US06399208B1

    公开(公告)日：2002-06-04

    申请号：US09414133

    申请日：1999-10-07

    申请人： Thomas H. Baum ,  Witold Paw

    发明人： Thomas H. Baum ,  Witold Paw

    IPC分类号： B32B900

    CPC分类号： C23C16/401 ,  C09D1/00

    摘要： A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, wherein M=Zr or Hf and (2) a second precursor metal compound or complex including an aliphatic alcoxide ligand coordinated to a metal M, wherein M=Zr or Hf, wherein the relative proportions of the first and second precursors relative to one another are employed to controllably establish the M/Si ratio in the deposited silicate thin film. The precursor composition may contain a solvent medium, so that the composition is adapted for liquid delivery CVD, to form stable thin-film gate dielectrics for fabrication of microelectronic devices.

    摘要翻译： 用于在衬底上形成锆和/或硅酸铪膜的前体组合物，例如通过化学气相沉积（CVD）。 说明性的前体组合物包括（1）第一前体金属化合物或络合物，其包含与金属M配位的硅烷醇（硅氧烷）配体，其中M = Zr或Hf，和（2）第二前体金属化合物或络合物，包括脂族醇酸配体 与金属M配位，其中M = Zr或Hf，其中第一和第二前体相对于彼此的相对比例用于可控地建立沉积的硅酸盐薄膜中的M / Si比。 前体组合物可以含有溶剂介质，使得组合物适于液体输送CVD，以形成用于制造微电子器件的稳定的薄膜栅极电介质。

    Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor
    78.
    发明授权
    Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor 有权
    铱基材料和基体上的结构的制备方法及其铱源试剂

    公开(公告)号：US06340769B1

    公开(公告)日：2002-01-22

    申请号：US09453995

    申请日：1999-12-03

    申请人： Thomas H. Baum ,  Chongying Xu

    发明人： Thomas H. Baum ,  Chongying Xu

    IPC分类号： C07F1500

    CPC分类号： H01L28/65 ,  C07F15/004 ,  C23C16/18 ,  C23C16/40 ,  C23F1/30 ,  C30B25/02 ,  C30B29/02 ,  C30B29/16 ,  H01L21/02071 ,  H01L21/32136 ,  H01L28/55 ,  Y10S438/906

    摘要： A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, and nitrogen oxide. Useful precursors include Lewis base stabilized Ir(I) &bgr;-diketonates and Lewis base stabilized Ir(I) &bgr;-ketoiminates. The iridium deposited on the substrate may then be etched for patterning an electrode, followed by depositing on the electrode a dielectric or ferroelectric material, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FRAMs, hybrid systems, smart cards and communication systems.

    摘要翻译： 一种在含有铱的膜的基底上形成含铱膜的方法，该方法是通过分解前体并在氧化环境中将铱沉积在氧化环境环境中的方法，其可分解成在基底上沉积铱 氧气，臭氧，空气和氮氧化物等氧化气体。 有用的前体包括路易斯碱稳定的Ir（I）β-二酮酸酯和路易斯碱稳定的Ir（I）β-酮缩酮。 然后可以蚀刻沉积在衬底上的铱以图案化电极，随后在电极上沉积电介质或铁电材料，用于制造诸如DRAM，FRAM，混合系统，智能卡和通信系统的薄膜电容器半导体器件。