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337 条记录 (耗时 0.044 秒)

    Circuit and method for driving a transistor component based on a load condition
    71.
    发明授权
    Circuit and method for driving a transistor component based on a load condition 有权
    基于负载条件驱动晶体管部件的电路和方法

    公开(公告)号：US08674727B2

    公开(公告)日：2014-03-18

    申请号：US12873146

    申请日：2010-08-31

    申请人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch

    发明人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch

    IPC分类号： H03K3/00

    CPC分类号： H03K17/687 ,  H03K17/122 ,  H03K2017/6878

    摘要： A circuit arrangement includes a transistor component with a gate terminal, a control terminal, and a load path between a source and a drain terminal. A drive circuit is connected to the control terminal and configured to determine a load condition of the transistor component, to provide a drive potential to the control terminal, and to adjust the drive potential dependent on the load condition.

    摘要翻译： 电路装置包括具有栅极端子的晶体管部件，控制端子以及源极和漏极端子之间的负载路径。 驱动电路连接到控制端子并且被配置为确定晶体管部件的负载状况，以向控制端子提供驱动电位，并根据负载条件来调节驱动电位。

    Semiconductor Device Including a Diode
    73.
    发明申请
    Semiconductor Device Including a Diode 有权
    包括二极管的半导体器件

    公开(公告)号：US20130153916A1

    公开(公告)日：2013-06-20

    申请号：US13328371

    申请日：2011-12-16

    申请人： Joachim Weyers ,  Anton Mauder ,  Franz Hirler ,  Andreas Meiser ,  Ulrich Glaser

    发明人： Joachim Weyers ,  Anton Mauder ,  Franz Hirler ,  Andreas Meiser ,  Ulrich Glaser

    IPC分类号： H01L29/06

    CPC分类号： H01L27/0255 ,  H01L27/06 ,  H01L27/0814 ,  H01L29/407 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/8725

    摘要： One embodiment of an integrated circuit includes a semiconductor body. In the semiconductor body a first trench region extends into the semiconductor body from a first surface. The integrated circuit further includes a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench region. The other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region.

    摘要翻译： 集成电路的一个实施例包括半导体本体。 在半导体本体中，第一沟槽区域从第一表面延伸到半导体本体中。 集成电路还包括包括阳极区域和阴极区域的二极管。 阳极区域和阴极区域中的一个至少部分地布置在第一沟槽区域中。 阳极区域和阴极区域中的另一个包括从第一沟槽区域的外部邻接阳极区域和阴极区域中的一个的第一半导体区域。

    Circuit Arrangement with an Adjustable Transistor Component
    75.
    发明申请
    Circuit Arrangement with an Adjustable Transistor Component 有权
    具有可调晶体管元件的电路布置

    公开(公告)号：US20120049898A1

    公开(公告)日：2012-03-01

    申请号：US12873146

    申请日：2010-08-31

    申请人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch

    发明人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch

    IPC分类号： H03B1/00

    CPC分类号： H03K17/687 ,  H03K17/122 ,  H03K2017/6878

    摘要： A circuit arrangement includes a transistor component with a gate terminal, a control terminal, and a load path between a source and a drain terminal. A drive circuit is connected to the control terminal and configured to determine a load condition of the transistor component, to provide a drive potential to the control terminal, and to adjust the drive potential dependent on the load condition.

    摘要翻译： 电路装置包括具有栅极端子的晶体管部件，控制端子以及源极和漏极端子之间的负载路径。 驱动电路连接到控制端子并且被配置为确定晶体管部件的负载状况，以向控制端子提供驱动电位，并根据负载条件来调节驱动电位。

    DEPLETION MOS TRANSISTOR AND CHARGING ARRANGEMENT
    76.
    发明申请
    DEPLETION MOS TRANSISTOR AND CHARGING ARRANGEMENT 有权
    绝缘MOS晶体管和充电装置

    公开(公告)号：US20120049273A1

    公开(公告)日：2012-03-01

    申请号：US12868918

    申请日：2010-08-26

    申请人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

    发明人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

    IPC分类号： H01L29/78 ,  H01L27/088

    CPC分类号： H01L29/7813 ,  H01L21/823487 ,  H01L27/0629 ,  H01L27/0883 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/4238 ,  H01L29/7803 ,  H01L29/7828

    摘要： A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region by a gate dielectric. The depletion transistor further includes a first discharge region of a second conductivity type arranged adjacent the gate dielectric and electrically coupled to a terminal for a reference potential. The depletion transistor can be included in a charging circuit.

    摘要翻译： 耗尽型晶体管包括源区和漏区，第一导电类型，第一导电类型的沟道区域布置在源区和漏区之间，第一栅电极邻近沟道区设置并与沟道介电绝缘 区域。 耗尽晶体管还包括第二导电类型的第一放电区域，其布置成邻近栅极电介质并电耦合到用于参考电位的端子。 耗尽晶体管可以包括在充电电路中。

    Semiconductor component including a lateral transistor component
    77.
    发明授权
    Semiconductor component including a lateral transistor component 有权
    半导体元件包括横向晶体管元件

    公开(公告)号：US08097880B2

    公开(公告)日：2012-01-17

    申请号：US12421346

    申请日：2009-04-09

    申请人： Joachim Weyers ,  Anton Mauder ,  Franz Hirler ,  Paul Kuepper

    发明人： Joachim Weyers ,  Anton Mauder ,  Franz Hirler ,  Paul Kuepper

    IPC分类号： H01L29/04

    CPC分类号： H01L29/872 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/405 ,  H01L29/42384 ,  H01L29/7393 ,  H01L29/7817 ,  H01L29/7824 ,  H01L29/78609 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78648

    摘要： A semiconductor component including a lateral transistor component is disclosed. One embodiment provides an electrically insulating carrier layer. A first and a second semiconductor layer are arranged on above another and are separated from another by a dielectric layer. The first semiconductor layer includes a polycrystalline semiconductor material, an amorphous semiconductor material or an organic semiconductor material. In the first semiconductor layer: a source zone, a body zone, a drift zone and a drain zone are provided. In the second semiconductor layer; a drift control zone is arranged adjacent to the drift zone, including a control terminal at a first lateral end for applying a control potential, and is coupled to the drain zone via a rectifying element at a second lateral end. A gate electrode is arranged adjacent to the body zone and is dielectrically insulated from the body zone by a gate dielectric layer.

    摘要翻译： 公开了一种包括横向晶体管元件的半导体元件。 一个实施例提供电绝缘载体层。 第一和第二半导体层被布置在另一个之上并且通过电介质层与另一个半导体层分开。 第一半导体层包括多晶半导体材料，非晶半导体材料或有机半导体材料。 在第一半导体层中提供源极区，体区，漂移区和漏区。 在第二半导体层中; 漂移控制区被布置成与漂移区相邻，包括用于施加控制电位的第一横向端的控制端，并且在第二横向端通过整流元件耦合到排水区。 栅极电极被布置成与身体区域相邻并且通过栅极介电层与身体区域介电绝缘。

    Semiconductor component arrangement having a component with a drift zone and a drift control zone
    79.
    发明授权
    Semiconductor component arrangement having a component with a drift zone and a drift control zone 有权
    具有具有漂移区和偏移控制区的分量的半导体组件布置

    公开(公告)号：US07829940B2

    公开(公告)日：2010-11-09

    申请号：US12163037

    申请日：2008-06-27

    申请人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder

    发明人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder

    IPC分类号： H01L29/732

    CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7804 ,  H03K2217/0036

    摘要： Disclosed is a semiconductor including a component having a drift zone and a drift control zone. A first connection zone is adjacent to the drift zone and is doped more highly than the drift zone. A drift control zone is arranged adjacent to the drift zone and is coupled to the first connection zone. A drift control zone is dielectric arranged between the drift zone and the drift control zone. At least one rectifier element is arranged between the first connection zone and the drift control zone. A charging circuit is connected to the drift control zone.

    摘要翻译： 公开了一种包括具有漂移区和漂移控制区的分量的半导体。 第一连接区域与漂移区相邻，并且掺杂比漂移区更高。 漂移控制区被布置成与漂移区相邻并且耦合到第一连接区。 漂移控制区是介于漂移区和漂移控制区之间的电介质。 至少一个整流元件布置在第一连接区域和漂移控制区域之间。 充电电路连接到漂移控制区。