Full-color liquid crystal display device and fabrication process therefor
    71.
    发明授权
    Full-color liquid crystal display device and fabrication process therefor 失效
    全彩液晶显示装置及其制造工艺

    公开(公告)号:US5625474A

    公开(公告)日:1997-04-29

    申请号:US658891

    申请日:1996-05-31

    CPC分类号: G02F1/1347 G02F1/13475

    摘要: A full-color liquid crystal display device is provided which includes: a first substrate formed with a plurality of liquid crystal driving active elements; and first, second and third liquid crystal cells stacked one on another on an inter-layer film formed on the first substrate; the first liquid crystal cell including a first liquid crystal driving electrode connected to a first liquid crystal driving active element formed on the first substrate; the second liquid crystal cell formed on the second substrate and including a second liquid crystal driving electrode connected to a second liquid crystal driving active element formed on the first substrate via a lower stereo-interconnection extending through the first liquid crystal cell; the third liquid crystal cell formed on the third substrate and including a third liquid crystal driving electrode connected to a third liquid crystal driving active element formed on the first substrate via another lower stereo-interconnection extending through the first liquid crystal cell and an upper stereo-interconnection extending through the second liquid crystal cell.

    摘要翻译: 提供一种全色液晶显示装置,其包括:形成有多个液晶驱动有源元件的第一基板; 以及在形成在第一基板上的层间膜上层叠的第一,第二和第三液晶单元; 所述第一液晶单元包括与形成在所述第一基板上的第一液晶驱动有源元件连接的第一液晶驱动电极; 所述第二液晶单元形成在所述第二基板上,并且包括通过延伸穿过所述第一液晶单元的下立体互连而连接到形成在所述第一基板上的第二液晶驱动有源元件的第二液晶驱动电极; 所述第三液晶单元形成在所述第三基板上,并且包括通过经由所述第一液晶单元延伸的另一下立体互连而连接到形成在所述第一基板上的第三液晶驱动有源元件的第三液晶驱动电极, 互连延伸穿过第二液晶单元。

    Coordinate input device for calculating a coordinate of an input
position of an applied vibration
    72.
    发明授权
    Coordinate input device for calculating a coordinate of an input position of an applied vibration 失效
    用于计算所施加的振动的输入位置的坐标的坐标输入装置

    公开(公告)号:US5610838A

    公开(公告)日:1997-03-11

    申请号:US366919

    申请日:1994-12-30

    IPC分类号: G06F3/043 G06F3/033 G01M7/00

    CPC分类号: G06F3/0433 Y10S367/907

    摘要: A shift of an input coordinate by a change in temperature in a coordinate input device is prevented. An arithmetic operation and control circuit 1 applies a drive signal to a vibration pen 3 and starts a timer. The drive signal applied to the vibration pen 3 is delayed by a delay circuit 12, which drives a vibrator drive circuit 2 to generate vibration. A delay time of the delay circuit 12 is shortened as a temperature rises and a sum time of the delay generated by the delay circuit 12 and a delay generated in the vibration pen 3 as the temperature changes is constant regardless of the temperature. As a result, a vibration propagation time measured by the timer represents a net propagation time plus a constant delay time regardless of the temperature. Thus, the stable coordinate input is assured regardless of the temperature.

    摘要翻译: 防止了坐标输入装置中的温度变化导致的输入坐标偏移。 算术运算控制电路1向振动笔3施加驱动信号,开始定时器。 施加到振动笔3的驱动信号被延迟电路12延迟,延迟电路12驱动振动器驱动电路2以产生振动。 延迟电路12的延迟时间随着温度升高而缩短,并且随着温度变化,由延迟电路12产生的延迟的和时间和在振动笔3中产生的延迟是恒定的,而与温度无关。 结果,由定时器测量的振动传播时间表示净传播时间加上恒定的延迟时间,而与温度无关。 因此,无论温度如何,均可确保稳定的坐标输入。

    Process for producing Bi-Pb-Sr-Ca-Cu-O superconducting films
    75.
    发明授权
    Process for producing Bi-Pb-Sr-Ca-Cu-O superconducting films 失效
    生产Bi-Pb-Sr-Ca-Cu-O超导薄膜的方法

    公开(公告)号:US5306702A

    公开(公告)日:1994-04-26

    申请号:US860505

    申请日:1992-06-17

    摘要: A process for producing a Bi-based perovskite superconducting film, comprising the steps of forming on a substrate a Pb-film, containing Bi-base material film comprising Bi, Pb, Sr, Ca and Cu in a Bi:Pb:Sr:Ca:Cu molar ratio of (1.9 to 2.1):(1.2 to 2.2, preferably 1.5 to 1.8):2:(1.9 to 2.2):(3 to 3.5) and sintering the Pb-containing Bi-base material film in an oxygen-containing atmosphere. The sintering step includes a main sintering period of 20 to 120 minutes, in which the temperature is raised from a first temperature to a second temperature, with the second temperature being in a range of 850.degree. to 860.degree. C., and the temperature rise in the main sintering period of 20 to 120 minutes being from 3.degree. to 10.degree. C.

    摘要翻译: PCT No.PCT / JP91 / 01423 Sec。 371日期:1992年6月17日 102(e)日期1992年6月17日PCT 1991年10月17日PCT公布。 出版物WO92 / 06923 日本1992年04月30日。一种Bi系钙钛矿超导膜的制造方法,其特征在于,在基板上形成含有Bi,Pb,Sr,Ca,Cu的Bi基材料膜的Pb膜, Bi:Pb:Sr:Ca:Cu的摩尔比为(1.9〜2.1):1.2〜2.2,优选为1.5〜1.8):2:(1.9〜2.2):( 3〜3.5) 在含氧气氛中的基材膜。 烧结步骤包括20〜120分钟的主烧结期间,其中温度从第一温度升至第二温度,第二温度在850℃至860℃的范围内,温度升高 在20〜120分钟的主烧结时间为3〜10℃。

    Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O
Superconducting films
    76.
    发明授权
    Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O Superconducting films 失效
    用于形成Pb掺杂的Bi-Sr-Ca-Cu-O超导膜的多层沉积方法

    公开(公告)号:US5141917A

    公开(公告)日:1992-08-25

    申请号:US565209

    申请日:1990-08-09

    IPC分类号: B32B18/00 C04B35/45 H01L39/24

    摘要: A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10 .sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.

    摘要翻译: 通过以下步骤形成具有高含量,几乎单相的高Tc相的钙钛矿型超导体膜:沉积至少一种第一材料的第一膜(例如,Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系),在基板上构成钙钛矿型超导体; 沉积至少一个第二材料的第二材料,该第二材料包含氧化物或元素(Bi 2 O 3,Tl 2 O 3,PbO x等,特别是PbO x),其在800℃下蒸气压大于10 -4 Pa至少作为主要成分 基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理,以在基板上形成钙钛矿型超导膜。 此外,确定沉积膜或叠层的优选组成。

    Coordinate input apparatus, control method thereof, and program
    78.
    发明授权
    Coordinate input apparatus, control method thereof, and program 有权
    坐标输入装置,其控制方法和程序

    公开(公告)号:US08780083B2

    公开(公告)日:2014-07-15

    申请号:US11836266

    申请日:2007-08-09

    申请人: Atsushi Tanaka

    发明人: Atsushi Tanaka

    IPC分类号: G06F3/042

    CPC分类号: G06F3/0421

    摘要: A plurality of sensors for receiving arrival light detect the change ranges of light amount distributions generated upon the pointing operation of a pointer on a coordinate input region. Coordinate values corresponding to the change ranges are calculated on the basis of the number of change ranges in the respective sensors and the number of pen-down signals obtained from the pointer.

    摘要翻译: 用于接收到达光的多个传感器检测在指针在坐标输入区域上的指示操作时产生的光量分布的变化范围。 基于各个传感器中的变化范围的数量和从指示​​器获得的减数信号的数量来计算与变化范围对应的坐标值。

    Optical sensor, optical sensor array, optical sensor driving method, and optical sensor array driving method
    79.
    发明授权
    Optical sensor, optical sensor array, optical sensor driving method, and optical sensor array driving method 有权
    光学传感器,光学传感器阵列,光学传感器驱动方法和光学传感器阵列驱动方法

    公开(公告)号:US08669626B2

    公开(公告)日:2014-03-11

    申请号:US12952979

    申请日:2010-11-23

    IPC分类号: H01L27/14

    CPC分类号: H01L31/112 H01L27/1446

    摘要: An optical sensor that is a transistor which includes a gate electrode including a semiconductor material where the carrier concentration is 1.0×1014/cm3 to 1.0×1017/cm3, an active layer including a semiconductor layer to form a channel by carriers of the same type as the gate electrode, a source electrode, a drain electrode, and a gate insulating film, wherein intensity of irradiated light is detected by a change in a value of current flowing between the source electrode and the drain electrode when the light is irradiated onto a depletion layer formed in the gate electrode; an optical sensor array, an optical sensor driving method, and an optical sensor array driving method are provided.

    摘要翻译: 一种光学传感器,其是包括载流子浓度为1.0×10 14 / cm 3至1.0×101 7 / cm 3的半导体材料的栅电极的晶体管,包括通过相同载流子形成沟道的半导体层的有源层 作为栅电极,源电极,漏电极和栅极绝缘膜,其中当光照射到源极电极和栅极绝缘膜上时,通过在源电极和漏极之间流动的电流的值的变化来检测照射光的强度 形成在栅电极中的耗尽层; 提供光学传感器阵列,光学传感器驱动方法和光学传感器阵列驱动方法。

    Method of Screening Damp-Dry Malodor Inhibitor and Method of Evaluating Damp-Dry Malodor Inhibitor
    80.
    发明申请
    Method of Screening Damp-Dry Malodor Inhibitor and Method of Evaluating Damp-Dry Malodor Inhibitor 有权
    防潮湿马铃薯抑制剂筛选方法及评价干燥恶臭抑制剂的方法

    公开(公告)号:US20130210061A1

    公开(公告)日:2013-08-15

    申请号:US13823851

    申请日:2011-09-01

    IPC分类号: C12Q1/02

    CPC分类号: C12Q1/025

    摘要: A method of screening a damp-dry malodor inhibitor, containing the steps of: bringing microorganisms having a 4-methyl-3-hexenoic acid production capacity into contact with a test substance in the presence of a sebaceous dirt component, detecting the production of a damp-dry malodor-causing substance by the microorganisms, and thereby selecting a test substance having a damp-dry malodor inhibitory function; and a method of evaluating a damp-dry malodor inhibitor, containing the steps of: bringing microorganisms having a 4-methyl-3-hexenoic acid production capacity into contact with a test substance in the presence of a sebaceous dirt component, detecting the production of a damp-dry malodor-causing substance by the microorganisms, and thereby evaluating the damp-dry malodor inhibitory function of the test substance.

    摘要翻译: 一种筛选湿 - 干恶臭抑制剂的方法,包括以下步骤:使带有4-甲基-3-己烯酸生产能力的微生物在皮脂污染成分存在下与受检物质接触,检测产生 由微生物引起的潮湿干燥的恶臭物质,从而选择具有潮湿干燥恶臭抑制功能的试验物质; 以及评价湿 - 干恶臭抑制剂的方法,包括以下步骤:使带有4-甲基-3-己烯酸生产能力的微生物与皮脂污染成分存在下的被检物质接触,检测产生 通过微生物产生潮湿干燥的恶臭物质,从而评价测试物质的湿 - 干恶臭抑制功能。