摘要:
A piezoelectric element of the present invention includes a substrate, a lower electrode layer, a piezoelectric layer, an upper electrode layer, a cavity portion formed below a piezoelectric vibrating portion, and at least two bridging portions. The at least two bridging portions are formed so as not to be line-symmetric with respect to any line segment traversing the piezoelectric vibrating portion and/or so as not to be point-symmetric with respect to any point in the piezoelectric vibrating portion in a projection of the piezoelectric vibrating portion in the laminating direction.
摘要:
A semiconductor chip is sealed by resin without covering an outer terminal of a semiconductor device having a power transistor. A semiconductor chip having a power transistor is housed within a recess of a metal cap while a drain electrode on a first surface of the semiconductor chip is bonded to a bottom of the recess via a connection material. A gate electrode and a source electrode are formed on a second surface opposite to the first surface of the semiconductor chip, and the gate electrode and the source electrode are bonded with metal plate terminals. In addition, the semiconductor chip is sealed by a resin sealing body with mounting-surfaces of the metal plate terminals being exposed. Mounting surfaces of the metal plate terminals and a third part of the metal cap are bonded to electrodes on a mounting board.
摘要:
A series piezoelectric resonator 11 is connected in series between an input terminal 15a and an output terminal 15b. A first electrode of a parallel piezoelectric resonator 12a is connected to a connection point between the input terminal 15a and the series piezoelectric resonator 11, and a second electrode of the parallel piezoelectric resonator 12a is connected to a first terminal of an inductor 13a. A first electrode of a parallel piezoelectric resonator 12b is connected to a connection point between the series piezoelectric resonator 11 and the output terminal 15b, and a second electrode of the parallel piezoelectric resonator 12b is connected to a first terminal of an inductor 13b. Second terminals of the inductors 13a and 13b are grounded. An additional piezoelectric resonator 14 is connected between the second electrode of the parallel piezoelectric resonator 12a and the second electrode of the parallel piezoelectric resonator 12b.
摘要:
A piezoeletric resonator includes: a substrate; a lower electrode formed on or above the substrate; a piezoeletric body formed on or above the lower electrode; an upper electrode formed on or above the piezoeletric body; and a cavity under a vibrating portion formed by the lower electrode, the piezoeletric body, and the upper electrode. Where a resonant frequency of vibration with a thickness of the vibrating portion being a half of a wavelength is taken as fr, an average of ultrasonic velocity in a material forming the cavity is taken as Vc, and a value determined based on the resonant frequency fr and the average of ultrasonic velocity Vc is taken as λc (=Vc/fr), a depth of the cavity is set so as to be equal to or larger than n×λc/2−λc/8 and equal to or smaller than n×λc/2+λc/8.
摘要:
A thin film bulk acoustic resonator (507b) comprises a substrate (101b), an acoustic mirror layer (508b) provided on the substrate (101b), including a plurality of impedance layers (502b, 503b) alternatively having a high acoustic impedance and a low acoustic impedance, and a piezoelectric thin film vibrator (509b) provided on the acoustic mirror layer (508b), including a lower electrode (504b), a piezoelectric thin film (105b) and an upper electrode (506b). The sum of a thickness of the lower electrode (504b) and a thickness of the upper electrode (506b) is 5% or more and 60% or less of a whole thickness of the piezoelectric thin film vibrator (509b), and the thickness of the lower electrode (504b) is larger than the thickness of the upper electrode (506b).
摘要:
A semiconductor chip is sealed by resin without covering an outer terminal of a semiconductor device having a power transistor. A semiconductor chip having a power transistor is housed within a recess of a metal cap while a drain electrode on a first surface of the semiconductor chip is bonded to a bottom of the recess via a connection material. A gate electrode and a source electrode are formed on a second surface opposite to the first surface of the semiconductor chip, and the gate electrode and the source electrode are bonded with metal plate terminals In addition, the semiconductor chip is sealed by a resin sealing body with mounting-surfaces of the metal plate terminals being exposed. Mounting surfaces of the metal plate terminals and a third part of the metal cap are bonded to electrodes on a mounting board.
摘要:
A band elimination filter includes an input terminal and an output terminal. A capacitor is coupled between a first terminal connected to the input terminal and a second terminal connected to the output terminal. The first terminal is grounded only via a first grounding point. The second terminal is grounded only via a second grounding point. A first acoustic resonator is connected between the first terminal and the first grounding point and a second acoustic resonator is connected between the second terminal and the second grounding point.
摘要:
A surface acoustic wave filter including a piezoelectric substrate, IDT electrodes which are formed on the piezoelectric substrate and are connected to balanced type terminals. Further, IDT electrodes are formed on the piezoelectric substrate and are connected to an unbalanced type terminal, connection electrodes of connecting the IDT electrodes, the IDT electrodes IDT electrodes to the balanced type terminals or the unbalanced type terminal, and a dielectric thin film formed between the piezoelectric substrate and the IDT electrodes, the IDT electrodes, the connection electrodes.
摘要:
A blow-molded container includes an outer layer of a synthetic resin, which forms the outer shell of a finite shape; an inner layer of a flexible synthetic resin, which is peelably laminated with the outer layer and forms an inner bag; and a pair of adhered zones of a vertical strip type, which is formed axisymmetrically on the central axis of container to adhere and fix the outer layer and the inner layer over the entire height and is located so as to avoid the positions of air introduction ports that have been provided in the outer layer to introduce air into the void between the outer layer and the inner layer. A pair of adhered zones is disposed at positions opposite to each other and is separated by a parting line. The lower ends of both adhered zones are disposed at the partly or wholly end-to-end position facing each other on the bottom seal formed when the bottom portion is pressed flat with the pinch-off of a blow mold. Because of this end-to-end facing position of the lower ends, the bottom seal has a full mechanical strength. Thus, there is provided a container of the delaminated type capable of molding by means of an ordinary mold and having high manufacturing efficiency.
摘要:
A filter having an unbalanced terminal, a first stripline resonator of which one end is connected to the unbalanced terminal, a second stripline resonator placed to be electromagnetically coupled to the first stripline resonator, and balanced terminals of which both ends are connected to the second stripline resonator, wherein the first stripline resonator and the second stripline resonator are connected by at least one impedance element, and the second stripline resonator is a ½ wavelength resonator substantially having ½ the length of a wavelength of a resonance frequency.