摘要:
A stator has a stator core, and stator windings wound around either the stator core or teeth of the stator. A rotor has a rotor core, windings wound around either the rotor core or teeth of the rotor, and magnetic auxiliary poles disposed between the teeth adjacent in a circumferential direction. The rotor further has diodes that are magnetic characteristic adjustment portions that cause the magnetic characteristic that occurs in the teeth by induced electromotive force produced in the rotor windings to vary in the circumferential direction of the rotor core.
摘要:
A magnetic resolver includes a stator core made of magnetic material, coils, and a rotor. The stator core has a base plate and protrusions formed integrally with the base plate so as to protrude from a surface of the base plate in the thickness direction. The coils are provided around the respective protrusions. The rotor is disposed so as to face the surface of the base plate with the coils interposed therebetween. The overlapping area between the rotor and each of the protrusions changes with a change in a rotation angle of the rotor relative to the stator core. The stator core has through-holes that pass through the base plate and the respective protrusions in the thickness direction.
摘要:
A rotor includes a plurality of salient poles, each of which is formed by a plurality of plate members including steel plates that are stacked together, provided extending in a radial direction and around which a coil is wound. The plurality of salient poles has auxiliary salient poles that protrude from the salient poles between two salient poles that are adjacent to one another. The auxiliary salient poles are formed by only a first plate member that is a portion of plate members that forms the salient poles.
摘要:
A rotating electrical machine system includes a stator that has stator windings of a plurality of phases, and that generates a stator magnetomotive force in accordance with stator current of different phases, which is supplied to the stator windings of the plurality of phases; a rotor on which rotor windings are wound such that rotor current is generated in accordance with the stator magnetomotive force generated by the stator and a magnetic pole is formed by the rotor current; and a control unit that controls an output torque from the rotor, by controlling the stator current. In a case where a predetermined torque is output from the rotor, the control unit applies a pulse to the stator current so as to increase the stator current and reduce the rotor current, when a temperature of the rotor is high as compared with when the temperature of the rotor is low.
摘要:
In the stator, a thermistor housed in a tube is arranged to be sandwiched between a coil end and a U-phase bus bar, allowing the thermistor to receive heat from above and below at two faces, that is a face of the U-phase bus bar and a top face of the coil end. Moreover, the thermistor can be placed substantially in close contact with the coil end. Accordingly, the temperature followability by the thermistor can be realized at high accuracy. As a result, there can be provided a stator having a configuration in which temperature followability of high accuracy can be achieved in measuring the temperature of a coil of a stator using a temperature detection element, and that can correspond to further downsizing of a rotating electric machine.
摘要:
A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.
摘要:
A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.
摘要:
A plurality of salient poles projecting toward a stator are arranged on a rotor core along the circumferential direction while being spaced apart from each other, and rotor windings are wound around these salient poles. The rotor windings are short-circuited through diodes, respectively; and when currents rectified by the diodes flow through the rotor windings, the salient poles are magnetized to produce a magnet where the magnetic pole is fixed. The width θ of each salient pole in the circumferential direction is smaller than a width corresponding to an electric angle of 180° of the rotor, and the rotor windings are wound around each salient pole by short-pitch winding.
摘要:
On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less.
摘要:
The present invention relates to an apparatus for producing a nitride semiconductor by crystal-growing the nitride semiconductor on a substrate by diffusing a gas containing a source gas of group III element and a source gas of group V element. The gas is diffused in parallel with the substrate and from upstream to downstream. The apparatus has the substrate housed in the apparatus and a flow channel for allowing the gas to flow in the flow channel. The apparatus also has a plurality of protrusions provided on an inner wall of the flow channel. A partition for causing the source gas of group III element and the source gas of group V element to be introduced separately into the flow channel is provided on the upstream portion of the flow channel and in a horizontal direction. The protrusions are formed on the upper and lower surfaces of the partition. With this structure, the source gas of group III element and the source gas of group V element are more uniformly mixed before the source gases are supplied.