Semiconductor device having wiring patterns with insulating layer
    72.
    发明授权
    Semiconductor device having wiring patterns with insulating layer 失效
    具有绝缘层布线图案的半导体装置

    公开(公告)号:US06781216B2

    公开(公告)日:2004-08-24

    申请号:US10128244

    申请日:2002-04-24

    申请人: Hiroki Nakamura

    发明人: Hiroki Nakamura

    IPC分类号: H01L21312

    摘要: A semiconductor device includes a semiconductor substrate having a center area where an IC is formed and a peripheral area surrounding the center area, a first wiring pattern formed on the substrate in the center area, a second wiring pattern formed in the peripheral area wherein the second wiring pattern encompasses the center area, a first insulating layer formed over the center and peripheral areas, and a second insulating layer formed on the first insulating layer which is formed on the semiconductor substrate wherein the second insulating layer is not formed over the second wiring pattern.

    摘要翻译: 半导体器件包括具有形成有IC的中心区域和围绕中心区域的周边区域的半导体衬底,形成在中心区域的衬底上的第一布线图案,形成在周边区域中的第二布线图案,其中第二布线图案 布线图案包括中心区域,形成在中心区域和外围区域上的第一绝缘层,以及形成在第一绝缘层上的第二绝缘层,其形成在半导体基板上,其中第二绝缘层不形成在第二布线图案上 。

    Projection type display apparatus
    74.
    发明授权
    Projection type display apparatus 失效
    投影式显示装置

    公开(公告)号:US06050689A

    公开(公告)日:2000-04-18

    申请号:US116934

    申请日:1998-07-17

    IPC分类号: H04N9/31 G03B21/14

    摘要: Disclosed is a single plate projection type display apparatus which is capable of achieving a high luminance without an increase in an output of a light source. A first lens plate having a plurality of lenses divides a light from a light source into a plurality of light beams. A second lens plate having a plurality of lenses superposes the divided plurality of light beams on a light valve, thereby performing an illumination. A color separation optical system composed of dichroic mirrors which are perpendicular to an XY plane and form predetermined angles to each other, performs a color separation for the light beams from the second lens plate. The light valve modulates R, G and B light beams which are incident thereonto. The modulated lights are projected by a projection lens. The whole shape of the second lens plate is a rectangle. The second lens plate is disposed so that a longitudinal direction of the longer side of the whole shape of the rectangle is perpendicular to a plane formed by a normal line to the dichroic mirrors and an optical axis immediately before an incidence onto the dichroic mirrors.

    摘要翻译: 公开了一种能够在不增加光源的情况下实现高亮度的单板投影型显示装置。 具有多个透镜的第一透镜板将来自光源的光分成多个光束。 具有多个透镜的第二透镜板将分割的多个光束叠加在光阀上,从而进行照明。 由垂直于XY平面并且彼此形成预定角度的分色镜组成的分色光学系统对来自第二透镜板的光进行分色。 光阀调制入射到其上的R,G和B光束。 调制光由投影透镜投影。 第二透镜板的整个形状是矩形。 第二透镜板被配置成使得矩形的整个形状的长边的纵向方向垂直于与分色镜的法线形成的平面以及在入射到分色镜之前的光轴。

    Image reproducing method for reproducing handwriting
    75.
    发明授权
    Image reproducing method for reproducing handwriting 失效
    用于再现手写的图像再现方法

    公开(公告)号:US5960124A

    公开(公告)日:1999-09-28

    申请号:US966529

    申请日:1997-11-10

    摘要: A handwriting storing and reproducing method which takes small images including a leading edge for writing and stores the small images in a time sequential manner following a movement of a writing device. The method then reads out the stored small images and overlaps a just read out small image to a previously read out small image so as to obatain a partial image when both small images include portions which include partial handwritings coincident to one another. Thereafter, the method overlaps one partial image to another partial image-so as to obtain a larger image when both partial images include portions which include partial handwritings coincident to one another.

    摘要翻译: 一种手写存储和再现方法,其采用包括用于写入的前沿的小图像,并且在写入装置的移动之后以时间顺序的方式存储小图像。 然后,该方法读出所存储的小图像,并将刚刚读出的小图像重叠到先前读出的小图像,以便当两个小图像包括彼此重合的部分笔迹的部分时,将部分图像缩小。 此后,该方法将一个部分图像与另一部分图像重叠,以便当两个部分图像包括包括彼此一致的部分笔迹的部分时获得较大的图像。

    Roof shingles
    76.
    发明授权
    Roof shingles 失效
    屋顶瓦

    公开(公告)号:US5595036A

    公开(公告)日:1997-01-21

    申请号:US498892

    申请日:1995-07-06

    申请人: Hiroki Nakamura

    发明人: Hiroki Nakamura

    IPC分类号: E04D1/16 F04D1/12

    CPC分类号: E04D1/16

    摘要: A roof single includes a substantially rectangular tab extending from an end portion of a widthwisely extending eave side of a shingle body. When a long side of the rectangular tab is X and a short side thereof is Y, the shingle body has a width of 2X and a depth of 2Y+a (where a>0).

    摘要翻译: 屋顶单体包括从板瓦体的宽度方向延伸的檐侧的端部延伸的大致矩形的突出部。 当矩形突片的长边为X且短边为Y时,瓦板体的宽度为2X,深度为2Y + a(其中a> 0)。

    Gaming machine running competing game between gaming terminals
    78.
    发明授权
    Gaming machine running competing game between gaming terminals 有权
    游戏机在游戏终端之间运行竞争游戏

    公开(公告)号:US09117344B2

    公开(公告)日:2015-08-25

    申请号:US13426000

    申请日:2012-03-21

    IPC分类号: G06F17/00 G06F19/00 G07F17/32

    摘要: The present invention provides a gaming machine including gaming terminals having high payout rate without increasing loss on the management side. When a result of a base game associated with a payout is obtained, the gaming machine determines whether at least a competing game condition associated with the payout is satisfied or not and, when it is determined that the competing game condition is satisfied, sets neighboring gaming terminals as opponents. When the opponent participates in a competing game, a competing game for winning a payout by competing against the opponent is run. According to a result of the competing game, at least a part of the payout is given to the winner of the competing game, and no payout is given to the loser of the competing game.

    摘要翻译: 本发明提供一种游戏机,其包括具有高支付率的游戏终端,而不增加管理侧的损失。 当获得与付款相关联的基本游戏的结果时,游戏机确定是否满足与支付相关联的至少竞争游戏条件,并且当确定竞争游戏条件被满足时,设置相邻游戏 终端为对手。 当对手参与竞争游戏时,竞争对手通过与对手进行竞争来赢得支付。 根据竞争游戏的结果,至少一部分支付给予竞争游戏的赢家,并且没有给予竞争游戏的输家。

    Semiconductor device
    79.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08530960B2

    公开(公告)日:2013-09-10

    申请号:US13298508

    申请日:2011-11-17

    IPC分类号: H01L29/66

    摘要: A semiconductor memory device includes a static memory cell having six MOS transistors arranged on a substrate. The six MOS transistors include first and second NMOS access transistors, third and fourth NMOS driver transistors, and first and second PMOS load transistors. Each of the first and second NMOS access transistors has a first diffusion layer, a pillar-shaped semiconductor layer, and a second diffusion layer arranged vertically on the substrate in a hierarchical manner. Each of the third and fourth NMOS driver transistors has a third diffusion layer, a pillar-shaped semiconductor layer, and a fourth diffusion layer arranged vertically on the substrate in a hierarchical manner. The lengths between the upper ends of the third diffusion layers and the lower ends of the fourth diffusion layers are shorter than the lengths between the upper ends of the first diffusion layer and the lower ends of the second diffusion layers.

    摘要翻译: 半导体存储器件包括具有布置在衬底上的六个MOS晶体管的静态存储单元。 六个MOS晶体管包括第一和第二NMOS存取晶体管,第三和第四NMOS驱动晶体管以及第一和第二PMOS负载晶体管。 第一和第二NMOS存取晶体管中的每一个具有第一扩散层,柱状半导体层和以分层方式垂直布置在衬底上的第二扩散层。 第三和第四NMOS驱动晶体管中的每一个具有第三扩散层,柱状半导体层和以等级方式垂直布置在衬底上的第四扩散层。 第三扩散层的上端和第四扩散层的下端之间的长度比第一扩散层的上端和第二扩散层的下端之间的长度短。

    Semiconductor device
    80.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08441066B2

    公开(公告)日:2013-05-14

    申请号:US12882698

    申请日:2010-09-15

    摘要: A semiconductor device according to the present invention comprises a first transistor and a second transistor, and functions as an inverter. The first transistor includes an island semiconductor layer, a first gate insulating film surrounding the periphery of the island semiconductor layer, a gate electrode surrounding the periphery of the first gate insulating film, p+-type semiconductor layers formed in the upper and lower part of the island semiconductor layer, respectively. The second transistor includes the gate electrode, a second gate insulating film surrounding a part of the periphery of the gate electrode, an arcuate semiconductor layer contacting a part of the periphery of the second gate insulating film, n+-type semiconductor layers formed in the upper and lower part of the arcuate semiconductor layer, respectively. A first contact electrically connects the p+-type semiconductor layer in the first transistor and the n+-type semiconductor layer in the second transistor.

    摘要翻译: 根据本发明的半导体器件包括第一晶体管和第二晶体管,并且用作反相器。 第一晶体管包括岛状半导体层,围绕岛状半导体层的周围的第一栅极绝缘膜,围绕第一栅极绝缘膜的周围的栅电极,形成在第一栅极绝缘膜的上部和下部的p +型半导体层 岛半导体层。 第二晶体管包括栅电极,围绕栅电极的周边的一部分的第二栅极绝缘膜,与第二栅极绝缘膜的周边的一部分接触的弓形半导体层,形成在上部的n +型半导体层 和下半部分的弧形半导体层。 第一接触电连接第一晶体管中的p +型半导体层和第二晶体管中的n +型半导体层。