利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

16 条记录 (耗时 0.027 秒)

    Light sensitive element and light sensitive element having internal circuitry
    2.
    发明授权
    Light sensitive element and light sensitive element having internal circuitry 有权
    具有内部电路的光敏元件和光敏元件

    公开(公告)号：US06404029B1

    公开(公告)日：2002-06-11

    申请号：US09656461

    申请日：2000-09-06

    申请人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

    发明人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

    IPC分类号： H01L2714

    CPC分类号： H01L27/1443 ,  H01L31/0352

    摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.

    摘要翻译： 光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。 第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面 。 扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。 当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

    Photosensitive device with internal circuitry that includes on the same substrate
    3.
    发明授权
    Photosensitive device with internal circuitry that includes on the same substrate 失效
    具有包含在同一基板上的内部电路的感光装置

    公开(公告)号：US06380603B1

    公开(公告)日：2002-04-30

    申请号：US09707158

    申请日：2000-11-07

    申请人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

    发明人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

    IPC分类号： H01L3106

    CPC分类号： H01L31/02024 ,  H01L27/144

    摘要： A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.

    摘要翻译： 半导体器件包括：基本上由第一导电类型的半导体多层结构和第二导电类型的第一半导体层之间的PN结组成的感光部分; 以及用于将感光部分分成多个区域的分隔部分。 第一导电类型的半导体多层结构包括：第一导电类型的半导体衬底; 第一导电类型的第一半导体层; 和第一导电类型的第二半导体层。 分隔部分包括从第二导电类型的第一半导体层延伸的第一导电类型的第三半导体层，以到达第一导电类型的第二半导体层。

    Circuit-integrated light-receiving device
    5.
    发明授权
    Circuit-integrated light-receiving device 有权
    电路集成光接收装置

    公开(公告)号：US06313484B1

    公开(公告)日：2001-11-06

    申请号：US09472886

    申请日：1999-12-28

    申请人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

    发明人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

    IPC分类号： H01L2715

    CPC分类号： H01L27/1443

    摘要： A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate and a second portion located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer of the first conductivity type located in a second region which is above the first portion of the first semiconductor crystal growth layer and does not overlap the first region; a second semiconductor crystal growth layer of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer and a surface of the buried diffusion layer; and a separation diffusion region having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section and a signal processing circuit section. The first region is located in the light-receiving device section. In the signal processing circuit section, the buried diffusion layer is in contact with the first portion of the first semiconductor crystal growth layer.

    摘要翻译： 本发明的电路集成光接收装置包括：第一导电类型的半导体衬底; 设置在所述半导体衬底的表面上的第一导电类型的第一半导体晶体生长层，其中所述第一半导体晶体生长层包括其杂质浓度在远离所述半导体衬底的表面的方向上逐渐减小的第一部分，以及第二半导体晶体生长层 位于第一部分上方的第一部分的部分，其杂质浓度分布在深度方向上是均匀的; 位于第一半导体晶体生长层的第一部分之上并且不与第一区域重叠的第二区域中的第一导电类型的掩埋扩散层; 设置在第一半导体晶体生长层的表面和掩埋扩散层的表面之间的第二导电类型的第二半导体晶体生长层; 以及具有第一导电类型的分离扩散区域，用于将第二半导体晶体生长层分割成光接收装置部分和信号处理电路部分。 第一区域位于光接收装置部分中。 在信号处理电路部中，埋入扩散层与第一半导体晶体生长层的第一部分接触。

    Light receiving element and light receiving device incorporating circuit and optical disk drive
    8.
    发明授权
    Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
    光接收元件和光接收装置并入电路和光盘驱动器

    公开(公告)号：US07307326B2

    公开(公告)日：2007-12-11

    申请号：US10499357

    申请日：2002-12-10

    申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    IPC分类号： H01L31/00 ,  H01L31/0232

    CPC分类号： H01L31/103 ,  H01L31/02161

    摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

    摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

    Optical ranging sensor and warm water wash toilet seat
    9.
    发明申请
    Optical ranging sensor and warm water wash toilet seat 审中-公开
    光学测距传感器和温水洗马桶座

    公开(公告)号：US20070210267A1

    公开(公告)日：2007-09-13

    申请号：US11710986

    申请日：2007-02-27

    申请人： Kentaroh Ishii ,  Isamu Ohkubo ,  Akifumi Yamaguchi

    发明人： Kentaroh Ishii ,  Isamu Ohkubo ,  Akifumi Yamaguchi

    IPC分类号： G01N21/86 ,  G01V8/00

    CPC分类号： G01S17/48

    摘要： A light receiving device 12 that receives reflected light condensed by a light receiving condenser means 14 has two first and second electrodes 15, 16 provided on a light receiving surface at prescribed intervals along a baseline that connects a light emitting device 11 with the light receiving device and a resistive region 21 provided between the two electrodes. An electric charge generated at the incident position of light incident on the light receiving surface of the light receiving device 12 becomes a photo current and outputted from the first and second electrodes 15, 16 via the resistive region 21. The resistance value of the resistive region 21 of the light receiving device 12 is distributed so as to be roughly inversely proportional to a distance from the optical axis of the light receiving condenser means 14 to the incident position of a light spot on the light receiving surface.

    摘要翻译： 接收由受光聚光器装置14会聚的反射光的光接收装置12具有沿着将发光装置11与光接收装置连接的基线以规定间隔设置在受光面上的两个第一和第二电极15,16 以及设置在两个电极之间的电阻区域21。 在入射到光接收装置12的光接收表面的光的入射位置处产生的电荷变成光电流，并且经由电阻区域21从第一和第二电极15,16输出。 光接收装置12的电阻区域21的电阻值被分布成与从光接收电容器14的光轴到光接收表面上的光点的入射位置大致成反比 。

    Light receiving element and light receiving device incorporating circuit and optical disk drive
    10.
    发明申请
    Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
    光接收元件和光接收装置并入电路和光盘驱动器

    公开(公告)号：US20050116320A1

    公开(公告)日：2005-06-02

    申请号：US10499357

    申请日：2002-12-10

    申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    IPC分类号： H01L31/0216 ,  H01L31/103 ,  H01L23/58

    CPC分类号： H01L31/103 ,  H01L31/02161

    摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

    摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。